SGMNQ70430
更新时间：2025-01-23 11:17:35
品牌：SGMICRO
描述：30V, Power, Single N-Channel,
PDFN Package, MOSFET
概述
数据手册SGMNQ70430 概述
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430 数据手册
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PDF下载SGMNQ70430
30V, Power, Single N-Channel,
PDFN Package, MOSFET
FEATURES
PRODUCT SUMMARY
RDSON
RDSON
ID
● Low On-State Resistance
PACKAGE
(TYP)
(MAX)
(MAX)
VGS = 10V VGS = 10V TC = +25℃
● Low Total Gate Charge and Capacitance Losses
● Small Footprint for Compact Design
● RoHS Compliant and Halogen Free
PDFN-5×6-8BL
5.3mΩ
6.9mΩ
46A
PDFN-3.3×3.3-8AL
5.3mΩ
6.9mΩ
40A
PIN CONFIGURATIONS
ABSOLUTE MAXIMUM RATINGS
(TOP VIEW)
(TOP VIEW)
PARAMETER
Drain-to-Source Voltage
Gate-to-Source Voltage
SYMBOL
VALUE
UNITS
VDS
30
V
V
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
8
7
6
5
D
VGS
±20
46
D
D
D
TC = +25℃
Drain Current (1)
PDFN-5×6-8BL
TC = +100℃
TA = +25℃
TA = +100℃
TC = +25℃
TC = +100℃
TA = +25℃
TA = +100℃
36
ID
A
A
17
11
PDFN-5×6-8BL
PDFN-3.3×3.3-8AL
40
Drain Current (1)
PDFN-3.3×3.3-8AL
30
ID
14
9
EQUIVALENT CIRCUIT
Drain Current (Pulse) (2)
PDFN-5×6-8BL
IDM
IDM
132
80
A
A
Drain Current (Pulse) (2)
PDFN-3.3×3.3-8AL
D
TC = +25℃
24
9.6
TC = +100℃
TA = +25℃
TA = +100℃
TC = +25℃
TC = +100℃
TA = +25℃
TA = +100℃
Total Dissipation
PDFN-5×6-8BL
PD
W
W
2.7
1
G
20
8.3
Total Dissipation
PDFN-3.3×3.3-8AL
PD
2
S
0.8
Avalanche Current (3)
Avalanche Energy (3)
Junction Temperature
IAS
EAS
TJ
26.5
35.1
+150
-55 to +150
+260
A
mJ
℃
℃
℃
Storage Temperature Range
TSTG
APPLICATIONS
Lead Temperature(Soldering, 10s)
CPU Power Delivery
DC/DC Converters
Battery Management
Stresses beyond those listed in Absolute Maximum Ratings may
cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
NOTES:
1. The current will be limited by Package, PCB, thermal design and
operating temperature.
2. tPULSE < 10µs.
3. Parts are 100% tested at VGS = 10V, IL = 19A, and EAS = 18.05mJ.
SG Micro Corp
JULY 2024 – REV. A.1
www.sg-micro.com
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM70430
TPDA8
PDFN-5×6-8BL
-55℃ to +150℃ SGMNQ70430TPDA8G/TR
Tape and Reel, 4000
Tape and Reel, 5000
XXXXX
SGMNQ70430
SGM0XM
TPDB8
XXXXX
PDFN-3.3×3.3-8AL -55℃ to +150℃ SGMNQ70430TPDB8G/TR
MARKING INFORMATION
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.
X X X X X
Vendor Code
Trace Code
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
DISCLAIMER
SG Micro Corp reserves the right to make any change in circuit design, or specificationswithout prior notice.
THERMAL RESISTANCE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
5.2
6
UNITS
PDFN-5×6-8BL
Junction-to-Case Thermal Resistance
RθJC
℃/W
PDFN-3.3×3.3-8AL
PDFN-5×6-8BL
46
Junction-to-Ambient Thermal Resistance
RθJA
℃/W
PDFN-3.3×3.3-8AL
62
SG Micro Corp
JULY 2024
www.sg-micro.com
2
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
ELECTRICAL CHARACTERISTICS
(TA = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Static OFF Characteristics
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Static ON Characteristics
VBR_DSS
IDSS
VGS = 0V, ID = 250µA
30
V
VGS = 0V, VDS = 24V
VGS = ±20V, VDS = 0V
1
µA
nA
IGSS
±100
Gate-to-Source Threshold Voltage
VGS_TH
RDSON
VGS = VDS, ID = 250µA
VGS = 10V, ID = 30A
1.2
1.6
5.3
9
2.2
6.9
V
Drain-to-Source On-State Resistance
mΩ
VGS = 4.5V, ID = 15A
VDS = 1.5V, ID = 15A
12.5
Forward Transconductance
Gate Resistance
gFS
RG
20
1.3
S
VGS = 0V, VDS = 0V, f = 1MHz
Ω
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
Input Capacitance
VF_SD
tRR
VGS = 0V, IS = 10A
0.8
23
9
1.1
V
ns
nC
VGS = 0V, IS = 15A, di/dt = 100A/μs
QRR
CISS
COSS
CRSS
588
519
35
Output Capacitance
VGS = 0V, VDS = 15V, f = 1MHz
pF
nC
Reverse Transfer Capacitance
VGS = 10V
VGS = 4.5V
13.9
7.2
2.2
4
Total Gate Charge
QG
VDS = 15V, ID = 15A
Gate-to-Source Charge
Gate-to-Drain Charge
Switch Characteristics
Turn-On Delay Time
Rise Time
QGS
QGD
V
GS = 4.5V, VDS = 15V, ID = 15A
tD_ON
tR
tD_OFF
tF
3.5
29.7
11.3
6.5
VGS = 10V, VDS = 15V, ID = 15A, RG = 3Ω
ns
Turn-Off Delay Time
Fall Time
SG Micro Corp
www.sg-micro.com
JULY 2024
3
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics (PDFN-5×6-8BL)
Output Characteristics (PDFN-3.3×3.3-8AL)
130
104
78
52
26
0
80
64
48
32
16
0
VGS = 10V
TJ = +25℃
TJ = +25℃
V
GS = 4.5V
GS = 4V
V
VGS = 3.5V
GS = 3V
VGS = 10V
V
V
GS = 4.5V
GS = 4V
V
VGS = 3.5V
GS = 3V
V
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
Drain-to-Source On-State Resistance vs. ID (PDFN-5×6-8BL)
Drain-to-Source On-State Resistance vs. ID (PDFN-3.3×3.3-8AL)
15
15
TJ = +25℃
TJ = +25℃
12
9
12
9
6
6
3
3
VGS = 10V
VGS = 10V
VGS = 4.5V
VGS = 4.5V
0
0
0
10
20
30
40
50
0
10
20
30
40
50
Drain Current (A)
Drain Current (A)
Drain-to-Source On-State Resistance vs. VGS (PDFN-5×6-8BL)
Drain-to-Source On-State Resistance vs. VGS (PDFN-3.3×3.3-8AL)
70
70
ID = 30A
ID = 30A
56
42
28
56
42
28
14
14
0
TJ = +150℃
TJ = +25℃
TJ = -55℃
TJ = +150℃
TJ = +25℃
TJ = -55℃
0
0
2
4
6
8
10
0
2
4
6
8
10
Gate-to-Source Voltage (V)
Gate-to-Source Voltage (V)
SG Micro Corp
www.sg-micro.com
JULY 2024
4
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Diode Forward (PDFN-5×6-8BL)
Diode Forward (PDFN-3.3×3.3-8AL)
50
40
30
20
10
0
50
40
30
20
10
0
TJ = +150℃
TJ = +25℃
TJ = -55℃
TJ = +150℃
TJ = +25℃
TJ = -55℃
0.0
0.3
0.6
0.9
1.2
1.5
0.0
0.3
0.6
0.9
1.2
1.5
Source-to-Drain Voltage (V)
Source-to-Drain Voltage (V)
Gate Charge Characteristics (PDFN-5×6-8BL)
VDS = 15V
Gate Charge Characteristics (PDFN-3.3×3.3-8AL)
VDS = 15V
10
8
10
8
ID = 15A
ID = 15A
6
6
4
4
2
2
0
0
0
3
6
9
12
15
0
3
6
9
12
15
Total Gate Charge (nC)
Total Gate Charge (nC)
Capacitance Characteristics (PDFN-5×6-8BL)
CISS
Capacitance Characteristics (PDFN-3.3×3.3-8AL)
1500
1200
900
600
300
0
1500
1200
900
600
300
0
CISS
f = 1MHz
f = 1MHz
COSS
CRSS
COSS
CRSS
0
6
12
18
24
30
0
6
12
18
24
30
Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
SG Micro Corp
www.sg-micro.com
JULY 2024
5
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Normalized Threshold Voltage vs. Temperature (PDFN-5×6-8BL)
2.0
Normalized Threshold Voltage vs. Temperature (PDFN-3.3×3.3-8AL)
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
-55
-25
5
35
65
95
125
155
-55
-25
5
35
65
95
125
155
Temperature (℃)
Temperature (℃)
Normalized On-Resistance vs. Temperature (PDFN-5×6-8BL)
2.0
Normalized On-Resistance vs. Temperature (PDFN-3.3×3.3-8AL)
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
-55
-25
5
35
65
95
125
155
-55
-25
5
35
65
95
125
155
Temperature (℃)
Temperature (℃)
Transfer Characteristics (PDFN-5×6-8BL)
VDS = 5V
Transfer Characteristics (PDFN-3.3×3.3-8AL)
40
32
24
16
8
30
24
18
12
6
VDS = 5V
TJ = +150℃
TJ = +25℃
TJ = -55℃
TJ = +150℃
TJ = +25℃
TJ = -55℃
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Gate-to-Source Voltage (V)
Gate-to-Source Voltage (V)
SG Micro Corp
www.sg-micro.com
JULY 2024
6
30V, Power, Single N-Channel,
PDFN Package, MOSFET
SGMNQ70430
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
JULY 2024 ‒ REV.A to REV.A.1
Page
Added PDFN-3.3×3.3-8AL package............................................................................................................................................................................ All
Changes from Original (JUNE 2024) to REV.A
Page
Changed from product preview to production data..................................................................................................................................................... All
SG Micro Corp
www.sg-micro.com
JULY 2024
7
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
PDFN-5×6-8BL
D1
A
D2
L2
c
e
b
D
Dimensions In Millimeters
Symbol
MIN
NOM
1.100
0.400
0.250
-
MAX
A
b
1.000
0.350
0.210
4.800
4.800
3.910
5.900
5.700
3.340
1.200
0.450
0.340
5.100
5.000
4.110
6.100
5.800
3.540
c
D
D1
D2
E
4.900
4.010
6.000
5.750
3.440
1.270 BSC
0.610
-
E1
E2
e
H
0.510
1.100
0.510
0.060
-
0.710
-
k
L
0.610
0.130
-
0.710
0.200
0.100
1.200
12°
L1
L2
P
1.000
8°
1.100
10°
θ
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00242.000
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
PDFN-3.3×3.3-8AL
D1
A
D2
L2
c
e
b
D
Dimensions In Millimeters
Symbol
MIN
NOM
0.800
0.300
0.150
3.300
3.150
2.450
3.300
3.000
1.740
0.650 BSC
0.420
0.690
0.400
0.150
-
MAX
0.900
0.350
0.200
3.500
3.250
2.550
3.500
3.100
1.840
A
b
0.700
0.250
0.140
3.100
3.050
2.350
3.100
2.900
1.640
c
D
D1
D2
E
E1
E2
e
H
0.320
0.590
0.250
0.100
-
0.520
0.790
0.550
0.200
0.150
12°
k
L
L1
L2
θ
8°
10°
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00244.000
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
PDFN-5×6-8BL
13"
13"
12.4
12.4
6.45
3.60
5.30
3.60
1.40
1.10
4.0
4.0
8.0
8.0
2.0
2.0
12.0
12.0
Q1
Q1
PDFN-3.3×3.3-8AL
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
13″
386
280
370
5
SG Micro Corp
www.sg-micro.com
TX20000.000
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