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SGMNQ70430

更新时间：2025-07-04 11:17:35
品牌：SGMICRO
描述：30V, Power, Single N-Channel, PDFN Package, MOSFET

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SGMNQ70430 概述

30V, Power, Single N-Channel, PDFN Package, MOSFET

SGMNQ70430 数据手册

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SGMNQ70430  
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
FEATURES  
PRODUCT SUMMARY  
RDSON  
RDSON  
ID  
● Low On-State Resistance  
PACKAGE  
(TYP)  
(MAX)  
(MAX)  
VGS = 10V VGS = 10V TC = +25℃  
● Low Total Gate Charge and Capacitance Losses  
● Small Footprint for Compact Design  
● RoHS Compliant and Halogen Free  
PDFN-5×6-8BL  
5.3mΩ  
6.9mΩ  
46A  
PDFN-3.3×3.3-8AL  
5.3mΩ  
6.9mΩ  
40A  
PIN CONFIGURATIONS  
ABSOLUTE MAXIMUM RATINGS  
(TOP VIEW)  
(TOP VIEW)  
PARAMETER  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
SYMBOL  
VALUE  
UNITS  
VDS  
30  
V
V
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
8
7
6
5
D
VGS  
±20  
46  
D
D
D
TC = +25℃  
Drain Current (1)  
PDFN-5×6-8BL  
TC = +100℃  
TA = +25℃  
TA = +100℃  
TC = +25℃  
TC = +100℃  
TA = +25℃  
TA = +100℃  
36  
ID  
A
A
17  
11  
PDFN-5×6-8BL  
PDFN-3.3×3.3-8AL  
40  
Drain Current (1)  
PDFN-3.3×3.3-8AL  
30  
ID  
14  
9
EQUIVALENT CIRCUIT  
Drain Current (Pulse) (2)  
PDFN-5×6-8BL  
IDM  
IDM  
132  
80  
A
A
Drain Current (Pulse) (2)  
PDFN-3.3×3.3-8AL  
D
TC = +25℃  
24  
9.6  
TC = +100℃  
TA = +25℃  
TA = +100℃  
TC = +25℃  
TC = +100℃  
TA = +25℃  
TA = +100℃  
Total Dissipation  
PDFN-5×6-8BL  
PD  
W
W
2.7  
1
G
20  
8.3  
Total Dissipation  
PDFN-3.3×3.3-8AL  
PD  
2
S
0.8  
Avalanche Current (3)  
Avalanche Energy (3)  
Junction Temperature  
IAS  
EAS  
TJ  
26.5  
35.1  
+150  
-55 to +150  
+260  
A
mJ  
℃
℃
℃
Storage Temperature Range  
TSTG  
APPLICATIONS  
Lead Temperature(Soldering, 10s)  
CPU Power Delivery  
DC/DC Converters  
Battery Management  
Stresses beyond those listed in Absolute Maximum Ratings may  
cause permanent damage to the device. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
NOTES:  
1. The current will be limited by Package, PCB, thermal design and  
operating temperature.  
2. tPULSE < 10µs.  
3. Parts are 100% tested at VGS = 10V, IL = 19A, and EAS = 18.05mJ.  
SG Micro Corp  
JULY 2024 – REV. A.1  
www.sg-micro.com  
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
PACKAGE/ORDERING INFORMATION  
SPECIFIED  
TEMPERATURE  
RANGE  
PACKAGE  
DESCRIPTION  
ORDERING  
NUMBER  
PACKAGE  
MARKING  
PACKING  
OPTION  
MODEL  
SGM70430  
TPDA8  
PDFN-5×6-8BL  
-55℃ to +150℃ SGMNQ70430TPDA8G/TR  
Tape and Reel, 4000  
Tape and Reel, 5000  
XXXXX  
SGMNQ70430  
SGM0XM  
TPDB8  
XXXXX  
PDFN-3.3×3.3-8AL -55℃ to +150℃ SGMNQ70430TPDB8G/TR  
MARKING INFORMATION  
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.  
X X X X X  
Vendor Code  
Trace Code  
Date Code - Year  
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If  
you have additional comments or questions, please contact your SGMICRO representative directly.  
DISCLAIMER  
SG Micro Corp reserves the right to make any change in circuit design, or specificationswithout prior notice.  
THERMAL RESISTANCE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VALUE  
5.2  
6
UNITS  
PDFN-5×6-8BL  
Junction-to-Case Thermal Resistance  
RθJC  
℃/W  
PDFN-3.3×3.3-8AL  
PDFN-5×6-8BL  
46  
Junction-to-Ambient Thermal Resistance  
RθJA  
℃/W  
PDFN-3.3×3.3-8AL  
62  
SG Micro Corp  
JULY 2024  
www.sg-micro.com  
2
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
ELECTRICAL CHARACTERISTICS  
(TA = +25℃, unless otherwise noted.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Static OFF Characteristics  
Drain-to-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Static ON Characteristics  
VBR_DSS  
IDSS  
VGS = 0V, ID = 250µA  
30  
V
VGS = 0V, VDS = 24V  
VGS = ±20V, VDS = 0V  
1
µA  
nA  
IGSS  
±100  
Gate-to-Source Threshold Voltage  
VGS_TH  
RDSON  
VGS = VDS, ID = 250µA  
VGS = 10V, ID = 30A  
1.2  
1.6  
5.3  
9
2.2  
6.9  
V
Drain-to-Source On-State Resistance  
mΩ  
VGS = 4.5V, ID = 15A  
VDS = 1.5V, ID = 15A  
12.5  
Forward Transconductance  
Gate Resistance  
gFS  
RG  
20  
1.3  
S
VGS = 0V, VDS = 0V, f = 1MHz  
Ω
Diode Characteristics  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
Dynamic Characteristics  
Input Capacitance  
VF_SD  
tRR  
VGS = 0V, IS = 10A  
0.8  
23  
9
1.1  
V
ns  
nC  
VGS = 0V, IS = 15A, di/dt = 100A/μs  
QRR  
CISS  
COSS  
CRSS  
588  
519  
35  
Output Capacitance  
VGS = 0V, VDS = 15V, f = 1MHz  
pF  
nC  
Reverse Transfer Capacitance  
VGS = 10V  
VGS = 4.5V  
13.9  
7.2  
2.2  
4
Total Gate Charge  
QG  
VDS = 15V, ID = 15A  
Gate-to-Source Charge  
Gate-to-Drain Charge  
Switch Characteristics  
Turn-On Delay Time  
Rise Time  
QGS  
QGD  
V
GS = 4.5V, VDS = 15V, ID = 15A  
tD_ON  
tR  
tD_OFF  
tF  
3.5  
29.7  
11.3  
6.5  
VGS = 10V, VDS = 15V, ID = 15A, RG = 3Ω  
ns  
Turn-Off Delay Time  
Fall Time  
SG Micro Corp  
www.sg-micro.com  
JULY 2024  
3
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
TYPICAL PERFORMANCE CHARACTERISTICS  
Output Characteristics (PDFN-5×6-8BL)  
Output Characteristics (PDFN-3.3×3.3-8AL)  
130  
104  
78  
52  
26  
0
80  
64  
48  
32  
16  
0
VGS = 10V  
TJ = +25℃  
TJ = +25℃  
V
GS = 4.5V  
GS = 4V  
V
VGS = 3.5V  
GS = 3V  
VGS = 10V  
V
V
GS = 4.5V  
GS = 4V  
V
VGS = 3.5V  
GS = 3V  
V
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Drain-to-Source Voltage (V)  
Drain-to-Source Voltage (V)  
Drain-to-Source On-State Resistance vs. ID (PDFN-5×6-8BL)  
Drain-to-Source On-State Resistance vs. ID (PDFN-3.3×3.3-8AL)  
15  
15  
TJ = +25℃  
TJ = +25℃  
12  
9
12  
9
6
6
3
3
VGS = 10V  
VGS = 10V  
VGS = 4.5V  
VGS = 4.5V  
0
0
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
Drain Current (A)  
Drain Current (A)  
Drain-to-Source On-State Resistance vs. VGS (PDFN-5×6-8BL)  
Drain-to-Source On-State Resistance vs. VGS (PDFN-3.3×3.3-8AL)  
70  
70  
ID = 30A  
ID = 30A  
56  
42  
28  
56  
42  
28  
14  
14  
0
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
0
0
2
4
6
8
10  
0
2
4
6
8
10  
Gate-to-Source Voltage (V)  
Gate-to-Source Voltage (V)  
SG Micro Corp  
www.sg-micro.com  
JULY 2024  
4
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Diode Forward (PDFN-5×6-8BL)  
Diode Forward (PDFN-3.3×3.3-8AL)  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
Source-to-Drain Voltage (V)  
Source-to-Drain Voltage (V)  
Gate Charge Characteristics (PDFN-5×6-8BL)  
VDS = 15V  
Gate Charge Characteristics (PDFN-3.3×3.3-8AL)  
VDS = 15V  
10  
8
10  
8
ID = 15A  
ID = 15A  
6
6
4
4
2
2
0
0
0
3
6
9
12  
15  
0
3
6
9
12  
15  
Total Gate Charge (nC)  
Total Gate Charge (nC)  
Capacitance Characteristics (PDFN-5×6-8BL)  
CISS  
Capacitance Characteristics (PDFN-3.3×3.3-8AL)  
1500  
1200  
900  
600  
300  
0
1500  
1200  
900  
600  
300  
0
CISS  
f = 1MHz  
f = 1MHz  
COSS  
CRSS  
COSS  
CRSS  
0
6
12  
18  
24  
30  
0
6
12  
18  
24  
30  
Drain-to-Source Voltage (V)  
Drain-to-Source Voltage (V)  
SG Micro Corp  
www.sg-micro.com  
JULY 2024  
5
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
TYPICAL PERFORMANCE CHARACTERISTICS (continued)  
Normalized Threshold Voltage vs. Temperature (PDFN-5×6-8BL)  
2.0  
Normalized Threshold Voltage vs. Temperature (PDFN-3.3×3.3-8AL)  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
-55  
-25  
5
35  
65  
95  
125  
155  
-55  
-25  
5
35  
65  
95  
125  
155  
Temperature (℃)  
Temperature (℃)  
Normalized On-Resistance vs. Temperature (PDFN-5×6-8BL)  
2.0  
Normalized On-Resistance vs. Temperature (PDFN-3.3×3.3-8AL)  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.6  
1.2  
0.8  
0.4  
0.0  
-55  
-25  
5
35  
65  
95  
125  
155  
-55  
-25  
5
35  
65  
95  
125  
155  
Temperature (℃)  
Temperature (℃)  
Transfer Characteristics (PDFN-5×6-8BL)  
VDS = 5V  
Transfer Characteristics (PDFN-3.3×3.3-8AL)  
40  
32  
24  
16  
8
30  
24  
18  
12  
6
VDS = 5V  
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
TJ = +150℃  
TJ = +25℃  
TJ = -55℃  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Gate-to-Source Voltage (V)  
Gate-to-Source Voltage (V)  
SG Micro Corp  
www.sg-micro.com  
JULY 2024  
6
30V, Power, Single N-Channel,  
PDFN Package, MOSFET  
SGMNQ70430  
REVISION HISTORY  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
JULY 2024 ‒ REV.A to REV.A.1  
Page  
Added PDFN-3.3×3.3-8AL package............................................................................................................................................................................ All  
Changes from Original (JUNE 2024) to REV.A  
Page  
Changed from product preview to production data..................................................................................................................................................... All  
SG Micro Corp  
www.sg-micro.com  
JULY 2024  
7
PACKAGE INFORMATION  
PACKAGE OUTLINE DIMENSIONS  
PDFN-5×6-8BL  
D1  
A
D2  
L2  
c
e
b
D
Dimensions In Millimeters  
Symbol  
MIN  
NOM  
1.100  
0.400  
0.250  
-
MAX  
A
b
1.000  
0.350  
0.210  
4.800  
4.800  
3.910  
5.900  
5.700  
3.340  
1.200  
0.450  
0.340  
5.100  
5.000  
4.110  
6.100  
5.800  
3.540  
c
D
D1  
D2  
E
4.900  
4.010  
6.000  
5.750  
3.440  
1.270 BSC  
0.610  
-
E1  
E2  
e
H
0.510  
1.100  
0.510  
0.060  
-
0.710  
-
k
L
0.610  
0.130  
-
0.710  
0.200  
0.100  
1.200  
12°  
L1  
L2  
P
1.000  
8°  
1.100  
10°  
θ
NOTE: This drawing is subject to change without notice.  
SG Micro Corp  
TX00242.000  
www.sg-micro.com  
PACKAGE INFORMATION  
PACKAGE OUTLINE DIMENSIONS  
PDFN-3.3×3.3-8AL  
D1  
A
D2  
L2  
c
e
b
D
Dimensions In Millimeters  
Symbol  
MIN  
NOM  
0.800  
0.300  
0.150  
3.300  
3.150  
2.450  
3.300  
3.000  
1.740  
0.650 BSC  
0.420  
0.690  
0.400  
0.150  
-
MAX  
0.900  
0.350  
0.200  
3.500  
3.250  
2.550  
3.500  
3.100  
1.840  
A
b
0.700  
0.250  
0.140  
3.100  
3.050  
2.350  
3.100  
2.900  
1.640  
c
D
D1  
D2  
E
E1  
E2  
e
H
0.320  
0.590  
0.250  
0.100  
-
0.520  
0.790  
0.550  
0.200  
0.150  
12°  
k
L
L1  
L2  
θ
8°  
10°  
NOTE: This drawing is subject to change without notice.  
SG Micro Corp  
TX00244.000  
www.sg-micro.com  
PACKAGE INFORMATION  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
P2  
P0  
W
Q2  
Q4  
Q2  
Q4  
Q2  
Q4  
Q1  
Q3  
Q1  
Q3  
Q1  
Q3  
B0  
Reel Diameter  
P1  
A0  
K0  
Reel Width (W1)  
DIRECTION OF FEED  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF TAPE AND REEL  
Reel Width  
Reel  
Diameter  
A0  
B0  
K0  
P0  
P1  
P2  
W
Pin1  
Package Type  
W1  
(mm)  
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant  
PDFN-5×6-8BL  
13"  
13"  
12.4  
12.4  
6.45  
3.60  
5.30  
3.60  
1.40  
1.10  
4.0  
4.0  
8.0  
8.0  
2.0  
2.0  
12.0  
12.0  
Q1  
Q1  
PDFN-3.3×3.3-8AL  
SG Micro Corp  
TX10000.000  
www.sg-micro.com  
PACKAGE INFORMATION  
CARTON BOX DIMENSIONS  
NOTE: The picture is only for reference. Please make the object as the standard.  
KEY PARAMETER LIST OF CARTON BOX  
Length  
(mm)  
Width  
(mm)  
Height  
(mm)  
Reel Type  
Pizza/Carton  
13″  
386  
280  
370  
5
SG Micro Corp  
www.sg-micro.com  
TX20000.000  

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