P0102BL 5AA4
更新时间：2024-12-05 10:24:59
描述：高抗扰度0.25 A 200 V SCR晶闸管
概述
数据手册
替代型号P0102BL 5AA4 概述
高抗扰度0.25 A 200 V SCR晶闸管 SCR晶闸管
P0102BL 5AA4 数据手册
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PDF下载P0102BL
®
SENSITIVE
0.25A SCRs
MAIN FEATURES:
Symbol
A
Value
0.25
200
Unit
A
G
I
T(RMS)
K
V
/V
V
DRM RRM
I
200
µA
GT
A
G
DESCRIPTION
K
Thanks to highly sensitive triggering levels, the
PO102BL SCR is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
SOT-23
Available in SOT-23, it provides optimized space
saving on high density printed circuit boards.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Tamb = 30°C
Tamb = 30°C
0.25
A
A
A
T(RMS)
I
0.17
7
T(AV)
I
Non repetitive surge peak on-state
current
tp = 8.3 ms
TSM
Tj = 25°C
tp = 10 ms
6
2
²
²
tp = 10 ms
Tj = 25°C
0.18
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
F = 60 Hz
tp = 20 µs
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
0.5
A
GM
P
Average gate power dissipation
0.02
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
Tj
September 2000 - Ed: 3
1/5
P0102BL
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
P0102BL
Unit
I
MAX.
MAX.
MIN.
200
0.8
0.1
8
µA
V
GT
V
= 12 V
R = 140 Ω
D
L
V
GT
V
V
I
= V
R = 3.3 kΩ
R = 1 kΩ
GK
Tj = 125°C
V
GD
D
DRM
L
V
= 10 µA
MIN.
V
RG
RG
I
I = 50 mA
R
R
= 1kΩ
= 1kΩ
MAX.
MAX.
MIN.
6
mA
mA
V/µs
V
H
T
GK
I
I
= 1 mA
7
L
G
GK
V
I
= 67 % V
R
= 1kΩ
dV/dt
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
200
1.7
1.0
D
DRM
GK
V
= 0.4 A
tp = 380 µs
MAX.
MAX.
TM
TM
V
Threshold voltage
V
t0
Dynamic resistance
MAX.
1000
1
mΩ
R
d
I
I
V
= V
DRM
RRM
DRM RRM
MAX.
µA
100
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
Junction to ambient (mounted on FR4 with recommended pad layout)
°C/W
400
th(j-a)
PRODUCT SELECTOR
Part Number
Voltage
Sensitivity
Package
P0102BL
200 V
200 µA
SOT-23
ORDERING INFORMATION
Blank
P 01 02 B L
5AA4
SENSITIVE
SCR
SERIES
PACKING MODE:
Tape & Reel
PACKAGE:
L: SOT-23
CURRENT: 0.25A
SENSITIVITY:
02: 200µA
VOLTAGE:
B: 200V
OTHER INFORMATION
Part Number
Marking
P2B
Weight
Base quantity
3000
Packing mode
P0102BL
0.01 g
Tape & reel
2/5
P0102BL
Fig. 1: Maximum average power dissipation
Fig. 2: Average and D.C. on-state current versus
versus average on-state current.
ambient temperature.
P(W)
IT(av)(A)
0.30
0.28
0.30
α = 180 °
D.C
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.25
0.20
α = 180°
0.15
0.10
360 °
0.08
0.06
0.04
0.05
Tamb(°C)
α
0.02
0.00
IT(av)(A)
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
0
25
50
75
100
125
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
K=[Zth(j-a)/Rth(j-a)]
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
1.00
6
5
4
IGT
0.10
3
2
IH & IL
(Rgk = 1kΩ)
1
Tj(°C)
tp(s)
0
0.01
-40 -20
0
20
40
60
80 100 120 140
1E-2
1E-1
1E+0
1E+1
1E+2
Fig. 5: Relative variation of holding current
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1kΩ]
dV/dt[Rgk] / dV/dt[Rgk = 1kΩ]
20
10.0
18
16
14
12
10
8
1.0
6
4
2
Rgk(kΩ)
Rgk(kΩ)
0.1
0
0
1E-2
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
1E-1
1E+0
1E+1
3/5
P0102BL
Fig. 7: Relative variation of dV/dt immunity
Fig. 8: Surge peak on-state current versus
versus gate-cathode capacitance (typical values).
number of cycles.
dV/dt[Cgk] / dV/dt [Rgk = 1k Ω]
10
ITSM(A)
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 1kΩ
7
6
5
4
3
2
8
6
4
Number of cycles
2
1
Cgk(nF)
0
0
1
10
100
1000
0
1
2
3
4
5
6
7
Fig. 9: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
Fig. 10: On-state characteristics (maximum
values).
a
tp < 10ms, and corresponding value of I²t.
ITSM(A),I2t(A2s)
ITM(A)
1E+1
100.0
Tj max.:
Tj initial = 25°C
Vto = 1.00 V
Rd = 1 Ω
ITSM
1E+0
10.0
1.0
Tj = Tj max.
Tj = 25°C
1E-1
I2t
tp(ms)
VTM(V)
0.1
1E-2
0.01
0.10
1.00
10.00
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
500
400
300
200
100
S (mm2)
0
0
10 20 30 40 50 60 70 80 90 100
4/5
P0102BL
PACKAGE MECHANICAL DATA
SOT-23 (Plastic)
A
E
DIMENSIONS
Millimeters
REF.
Inches
e
Min.
Max.
Min.
Max.
D
e1
B
A
A1
B
0.89
0
1.4
0.1
0.035
0
0.055
0.004
0.02
S
0.3
0.51
0.18
3.04
1.05
2.1
0.012
0.003
0.108
0.033
0.067
0.047
0.083
A1
c
0.085
2.75
0.85
1.7
0.007
0.12
D
e
0.041
0.083
0.063
0.108
L
e1
E
1.2
1.6
H
H
L
2.1
2.75
0.6 typ.
0.024 typ.
S
0.35
0.65
0.014
0.026
c
FOOTPRINT DIMENSIONS (in millimeters)
SOT-23 (Plastic)
0.9
0.9
0.035
0.035
1.9
0.075
mm
inch
1.45
0.037
0.9
0.035
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
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5/5
P0102BL 5AA4 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| NYC0102BLT1G | ONSEMI | Sensitive Gate Silicon Controlled Rectifiers | 类似代替 |
|
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