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P0102BL 5AA4

更新时间：2025-07-04 10:24:59
品牌：STMICROELECTRONICS
描述：高抗扰度0.25 A 200 V SCR晶闸管

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P0102BL 5AA4 概述

高抗扰度0.25 A 200 V SCR晶闸管 SCR晶闸管

P0102BL 5AA4 数据手册

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P0102BL  
®
SENSITIVE  
0.25A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
0.25  
200  
Unit  
A
G
I
T(RMS)  
K
V
/V  
V
DRM RRM  
I
200  
µA  
GT  
A
G
DESCRIPTION  
K
Thanks to highly sensitive triggering levels, the  
PO102BL SCR is suitable for all applications  
where the available gate current is limited such as  
stand-by mode power supplies, smoke and alarm  
detectors...  
SOT-23  
Available in SOT-23, it provides optimized space  
saving on high density printed circuit boards.  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
Average on-state current (180° conduction angle)  
Tamb = 30°C  
Tamb = 30°C  
0.25  
A
A
A
T(RMS)  
I
0.17  
7
T(AV)  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
TSM  
Tj = 25°C  
tp = 10 ms  
6
2
²
²
tp = 10 ms  
Tj = 25°C  
0.18  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 60 Hz  
tp = 20 µs  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
0.5  
A
GM  
P
Average gate power dissipation  
0.02  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
Tj  
September 2000 - Ed: 3  
1/5  
P0102BL  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
P0102BL  
Unit  
I
MAX.  
MAX.  
MIN.  
200  
0.8  
0.1  
8
µA  
V
GT  
V
= 12 V  
R = 140 Ω  
D
L
V
GT  
V
V
I
= V  
R = 3.3 kΩ  
R = 1 kΩ  
GK  
Tj = 125°C  
V
GD  
D
DRM  
L
V
= 10 µA  
MIN.  
V
RG  
RG  
I
I = 50 mA  
R
R
= 1kΩ  
= 1kΩ  
MAX.  
MAX.  
MIN.  
6
mA  
mA  
V/µs  
V
H
T
GK  
I
I
= 1 mA  
7
L
G
GK  
V
I
= 67 % V  
R
= 1kΩ  
dV/dt  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
200  
1.7  
1.0  
D
DRM  
GK  
V
= 0.4 A  
tp = 380 µs  
MAX.  
MAX.  
TM  
TM  
V
Threshold voltage  
V
t0  
Dynamic resistance  
MAX.  
1000  
1
mΩ  
R
d
I
I
V
= V  
DRM  
RRM  
DRM RRM  
MAX.  
µA  
100  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
Junction to ambient (mounted on FR4 with recommended pad layout)  
°C/W  
400  
th(j-a)  
PRODUCT SELECTOR  
Part Number  
Voltage  
Sensitivity  
Package  
P0102BL  
200 V  
200 µA  
SOT-23  
ORDERING INFORMATION  
Blank  
P 01 02 B L  
5AA4  
SENSITIVE  
SCR  
SERIES  
PACKING MODE:  
Tape & Reel  
PACKAGE:  
L: SOT-23  
CURRENT: 0.25A  
SENSITIVITY:  
02: 200µA  
VOLTAGE:  
B: 200V  
OTHER INFORMATION  
Part Number  
Marking  
P2B  
Weight  
Base quantity  
3000  
Packing mode  
P0102BL  
0.01 g  
Tape & reel  
2/5  
P0102BL  
Fig. 1: Maximum average power dissipation  
Fig. 2: Average and D.C. on-state current versus  
versus average on-state current.  
ambient temperature.  
P(W)  
IT(av)(A)  
0.30  
0.28  
0.30  
α = 180 °  
D.C  
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.25  
0.20  
α = 180°  
0.15  
0.10  
360 °  
0.08  
0.06  
0.04  
0.05  
Tamb(°C)  
α
0.02  
0.00  
IT(av)(A)  
0.00  
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18  
0
25  
50  
75  
100  
125  
Fig. 3: Relative variation of thermal impedance  
junction to ambient versus pulse duration.  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature (typical values).  
K=[Zth(j-a)/Rth(j-a)]  
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]  
1.00  
6
5
4
IGT  
0.10  
3
2
IH & IL  
(Rgk = 1kΩ)  
1
Tj(°C)  
tp(s)  
0
0.01  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
Fig. 5: Relative variation of holding current  
Fig. 6: Relative variation of dV/dt immunity  
versus gate-cathode resistance (typical values).  
versus gate-cathode resistance (typical values).  
IH[Rgk] / IH[Rgk = 1kΩ]  
dV/dt[Rgk] / dV/dt[Rgk = 1kΩ]  
20  
10.0  
18  
16  
14  
12  
10  
8
1.0  
6
4
2
Rgk(kΩ)  
Rgk(kΩ)  
0.1  
0
0
1E-2  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
1E-1  
1E+0  
1E+1  
3/5  
P0102BL  
Fig. 7: Relative variation of dV/dt immunity  
Fig. 8: Surge peak on-state current versus  
versus gate-cathode capacitance (typical values).  
number of cycles.  
dV/dt[Cgk] / dV/dt [Rgk = 1k Ω]  
10  
ITSM(A)  
VD = 0.67 x VDRM  
Tj = 125°C  
Rgk = 1kΩ  
7
6
5
4
3
2
8
6
4
Number of cycles  
2
1
Cgk(nF)  
0
0
1
10  
100  
1000  
0
1
2
3
4
5
6
7
Fig. 9: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
Fig. 10: On-state characteristics (maximum  
values).  
a
tp < 10ms, and corresponding value of I²t.  
ITSM(A),I2t(A2s)  
ITM(A)  
1E+1  
100.0  
Tj max.:  
Tj initial = 25°C  
Vto = 1.00 V  
Rd = 1 Ω  
ITSM  
1E+0  
10.0  
1.0  
Tj = Tj max.  
Tj = 25°C  
1E-1  
I2t  
tp(ms)  
VTM(V)  
0.1  
1E-2  
0.01  
0.10  
1.00  
10.00  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
Fig. 11: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35 µm).  
Rth(j-a) (°C/W)  
500  
400  
300  
200  
100  
S (mm2)  
0
0
10 20 30 40 50 60 70 80 90 100  
4/5  
P0102BL  
PACKAGE MECHANICAL DATA  
SOT-23 (Plastic)  
A
E
DIMENSIONS  
Millimeters  
REF.  
Inches  
e
Min.  
Max.  
Min.  
Max.  
D
e1  
B
A
A1  
B
0.89  
0
1.4  
0.1  
0.035  
0
0.055  
0.004  
0.02  
S
0.3  
0.51  
0.18  
3.04  
1.05  
2.1  
0.012  
0.003  
0.108  
0.033  
0.067  
0.047  
0.083  
A1  
c
0.085  
2.75  
0.85  
1.7  
0.007  
0.12  
D
e
0.041  
0.083  
0.063  
0.108  
L
e1  
E
1.2  
1.6  
H
H
L
2.1  
2.75  
0.6 typ.  
0.024 typ.  
S
0.35  
0.65  
0.014  
0.026  
c
FOOTPRINT DIMENSIONS (in millimeters)  
SOT-23 (Plastic)  
0.9  
0.9  
0.035  
0.035  
1.9  
0.075  
mm  
inch  
1.45  
0.037  
0.9  
0.035  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronic  
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom  
http://www.st.com  
5/5  

P0102BL 5AA4 CAD模型

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P0102BL 5AA4 替代型号

型号 制造商 描述 替代类型 文档
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