概述
规格参数
数据手册P0102DA2AL3 概述
0.8A SCRs 0.8A可控硅 可控硅整流器
P0102DA2AL3 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 零件包装代码： | TO-92 |
| 包装说明： | CYLINDRICAL, O-PBCY-T3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.30.00.80 | 风险等级： | 5.6 |
| Is Samacsys： | N | 配置： | SINGLE |
| 关态电压最小值的临界上升速率： | 75 V/us | 最大直流栅极触发电流： | 0.2 mA |
| 最大直流栅极触发电压： | 0.8 V | 最大维持电流： | 5 mA |
| JEDEC-95代码： | TO-92 | JESD-30 代码： | O-PBCY-T3 |
| JESD-609代码： | e3 | 最大漏电流： | 0.1 mA |
| 通态非重复峰值电流： | 8 A | 元件数量： | 1 |
| 端子数量： | 3 | 最大通态电流： | 500 A |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | CYLINDRICAL | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 认证状态： | Not Qualified | 最大均方根通态电流： | 0.8 A |
| 断态重复峰值电压： | 400 V | 重复峰值反向电压： | 400 V |
| 子类别： | Silicon Controlled Rectifiers | 表面贴装： | NO |
| 端子面层： | Matte Tin (Sn) | 端子形式： | THROUGH-HOLE |
| 端子位置： | BOTTOM | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
P0102DA2AL3 数据手册
通过下载P0102DA2AL3数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载P01 Series
®
SENSITIVE
0.8A SCRs
MAIN FEATURES:
Symbol
A
Value
0.8
Unit
A
G
I
T(RMS)
K
V
/V
400 and 600
5 to 200
V
DRM RRM
I
µA
GT
DESCRIPTION
Thanks to highly sensitive triggering levels, the
P01 SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interruptors, pilot circuits in
solid state relays, stand-by mode power supplies,
smoke and alarm detectors.
SOT-223
(P01xxN)
TO-92
(P01xxA)
Available in through-hole or surface mount pack-
ages, the voltage capability of this series has been
upgrated since its introduction, to reach 600 V.
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I
RMS on-state current
(180° conduction angle)
TO-92
SOT-223
TO-92
Tl = 55°C
Tamb = 70°C
Tl = 55°C
T(RMS)
0.8
0.5
A
IT
Average on-state current
(180° conduction angle)
(AV)
A
A
SOT-223
tp = 8.3 ms
tp = 10 ms
Tamb = 70°C
I
Non repetitive surge peak on-state
current
8
7
TSM
Tj = 25°C
²
²
2
tp = 10ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
0.24
50
A S
I t
I t Value for fusing
Critical rate of rise of on-state current
dI/dt
Tj = 125°C
A/µs
I
= 2 x I , tr ≤ 100 ns
G
GT
I
Peak gate current
Tj = 125°C
Tj = 125°C
1
A
GM
P
Average gate power dissipation
0.1
W
G(AV)
T
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
stg
°C
Tj
September 2000 - Ed: 3
1/6
P01 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
P01xx
11
Symbol
Test Conditions
Unit
02
18
I
MIN.
MAX.
MAX.
MIN.
-
4
0.5
GT
µA
200
25
0.8
5
V
= 12 V
R = 140 Ω
D
L
V
V
V
V
GT
V
Tj = 125°C
V
I
= V
R = 3.3 kΩ
R
= 1 kΩ
0.1
8
GD
D
DRM
L
GK
V
MIN.
= 10 µA
RG
RG
I = 50 mA
R
= 1 kΩ
MAX.
MAX.
5
mA
mA
I
T
GK
H
I
I
= 1 mA
R = 1 kΩ
GK
6
L
G
dV/dt
V
= 67 % V
R
= 1 kΩ
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
MIN.
MAX.
MAX.
MAX.
MAX.
75
80
75
V/µs
V
D
DRM
GK
V
I
= 1.6 A tp = 380 µs
1.95
0.95
600
1
TM
TM
V
Threshold voltage
V
t0
R
Dynamic resistance
mΩ
µA
d
I
V
V
V
= V
= V
= V
= 400 V
= 600 V
R
R
R
= 1 kΩ
= 1 kΩ
= 1 kΩ
GK
GK
DRM
DRM
DRM
DRM
RRM
RRM
RRM
Tj = 25°C
I
10
µA
µA
RRM
Tj = 125°C
MAX.
100
GK
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
R
R
R
Junction to case (DC)
°C/W
TO-92
80
30
th(j-i)
Junction to tab (DC)
Junction to ambient
SOT-223
TO-92
th(j-t)
150
60
°C/W
th(j-a)
²
SOT-223
S = 5 cm
S = Copper surface under tab
PRODUCT SELECTOR
Voltage
Part Number
Sensitivity
Package
400 V
600 V
P0102DA
P0102DN
P0102MA
P0102MN
P0111DA
P0111DN
P0111MA
P0111MN
P0118DA
P0118DN
P0118MA
P0118MN
X
200 µA
200 µA
200 µA
200 µA
25 µA
25 µA
25 µA
25 µA
5 µA
TO-92
SOT-223
TO-92
X
X
X
SOT-223
TO-92
X
X
SOT-223
TO-92
X
X
SOT-223
TO-92
X
X
5 µA
SOT-223
TO-92
X
X
5 µA
5 µA
SOT-223
2/6
P01 Series
ORDERING INFORMATION
Blank
P 01 02 D N
1AA3
SENSITIVE
SCR
SERIES
PACKING MODE:
1AA3:TO-92 bulk (preferred)
2AL3:TO-92 ammopack
5AA4: SOT-223 Tape & Reel
VOLTAGE:
D: 400V
M: 600V
PACKAGE:
A:TO-92
N: SOT-223
CURRENT: 0.8A
SENSITIVITY:
02: 200µA
11: 25µA
18: 5µA
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
P01xxyA 1AA3
P01xxyA 2AL3
P0102yN 5AA4
P0111yN 5AA4
P0118yN 5AA4
P01xxyA
P01xxyA
0.2 g
0.2 g
2500
2000
1000
1000
1000
Bulk
Ammopack
P2y
P1y
P8y
0.12 g
0.12 g
0.12 g
Tape & reel
Tape & reel
Tape & reel
Note: xx = sensitivity, y = voltage
Fig. 1: Maximum average power dissipation
Fig. 2-1: Average and D.C. on-state current
versus average on-state current.
versus lead temperature.
P(W)
IT(av)(A)
1.1
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
0.0
Tlead or Ttab (°C)
0
25
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout for SOT-223).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)]
IT(av)(A)
1.00
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.10
0.1
0.0
Tamb(°C)
tp(s)
0.01
1E-2
0
25
50
75
100
125
1E-1
1E+0
1E+1
1E+2 5E+2
3/6
P01 Series
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5:Relative variation of holding current versus
gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1kΩ]
IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C
6
5
4
3
2
1
Tj(°C)
Rgk(kΩ)
0
-40 -20
0
20
40
60
80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt[Rgk=1kΩ]
dV/dt[Rgk] / dV/dt[Rgk=1kΩ]
10
10.0
8
6
4
1.0
2
Rgk(kΩ)
Cgk(nF)
0
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
1
2
3
4
5
6
7
Fig. 8: Surge peak on-state current versus
number of cycles.
Fig. 9: Non-repetitive surge peak on-state
current for sinusoidal pulse with width
a
tp < 10 ms, and corresponding value of I²t.
ITSM(A), I2t(A2s)
ITSM(A)
100.0
8
7
tp=10ms
6
Onecycle
10.0
1.0
5
4
3
2
1
0
Non repetitive
Tj initial=25°C
Repetitive
Tamb=25°C
tp(ms)
Numberofcycles
100 1000
0.1
0.01
1
10
10.00
1.00
0.10
4/6
P01 Series
Fig. 10: On-state characteristics (maximum
values).
Fig. 11: SOT-223 Thermal resistance junction to
ambient versus copper surface under tab (Epoxy
printed circuit board FR4, copper thickness:
35 µm).
ITM(A)
Rth(j-a) (°C/W)
1E+1
130
120
110
100
90
Ω
1E+0
80
70
60
50
1E-1
40
30
20
S (cm2)
VTM(V)
10
0
1E-2
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.5
1.0
1.5 2.0
2.5
3.0
3.5
4.0 4.5
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
DIMENSIONS
REF.
Millimeters
Inches
A
Min. Typ. Max. Min. Typ. Max.
a
A
B
C
D
E
F
a
1.35
2.54
0.053
0.100
4.70
0.185
B
C
4.40
0.173
0.500
12.70
F
D
E
3.70
0.50
0.146
0.019
5/6
P01 Series
PACKAGE MECHANICAL DATA
SOT-223 (Plastic)
DIMENSIONS
A
c
REF.
Millimeters
Inches
V
A1
Min. Typ. Max. Min. Typ. Max.
B
A
A1
B
1.80
0.071
0.004
e1
D
0.02
0.60
2.90
0.24
6.30
0.1 0.0008
0.70 0.85 0.024 0.027 0.034
3.00 3.15 0.114 0.118 0.124
0.26 0.35 0.009 0.010 0.014
6.50 6.70 0.248 0.256 0.264
B1
B1
c
D
H
e
2.3
4.6
0.090
0.181
E
e1
E
3.30
6.70
3.50 3.70 0.130 0.138 0.146
7.00 7.30 0.264 0.276 0.287
10° max
H
e
V
FOOTPRINT DIMENSIONS (in millimeters)
SOT-223 (Plastic)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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6/6
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