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TSM60N1R4CH

更新时间：2025-07-06 11:11:08

品牌：TSC

描述：600V, 3.3A, Single N-Channel High Voltage MOSFETs

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TSM60N1R4CH 概述

600V, 3.3A, Single N-Channel High Voltage MOSFETs

TSM60N1R4CH 数据手册

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TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

Pin Definition:

1. Gate

2. Drain

TO-252

(DPAK)

TO-251

(IPAK)

Key Parameter Performance

Parameter

V_DS

Value

600

Unit

3. Source

R_DS(on)(max)

Q_g

1.4

7.7

Block Diagram

Features

●

Super-Junction technology

High performance due to small figure-of-merit

High ruggedness performance

High commutation performance

Application

●

Power Supply

Lighting

Ordering Information

Part No.

Package

TO-251

Packing

75pcs / Tube

N-Channel MOSFET

TSM60N1R4CH C5G

TSM60N1R4CP ROG

TO-252

2.5kpcs / 13” Reel

Note: “G” denotes for Halogen- and Antimony-free as those which contain

<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)

and <1000ppm antimony compounds

Absolute Maximum Ratings (T_C= 25°C unless otherwise noted)

Limit

Parameter

Symbol

V_DS

Unit

Drain-Source Voltage

600

Gate-Source Voltage

V_GS

±30

Continuous Drain Current ^{(Note 1)}

Pulsed Drain Current ^{(Note 2)}

Total Power Dissipation @ T_C= 25°C

Single Pulsed Avalanche Energy ^{(Note 3)}

Single Pulsed Avalanche Current ^{(Note 3)}

T_C= 25°C

I_D

3.3

I_DM

9.9

P_DTOT

E_AS

I_AS

1.6

Operating Junction and Storage Temperature Range

T_J, T_STG

- 55 to +150

°C

Thermal Performance

Parameter

Symbol

R_ӨJC

Limit

3.3

Unit

°C/W

Junction to Case Thermal Resistance

Junction to Ambient Thermal Resistance

R_ӨJA

1/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

Electrical Specifications (T_C= 25°C unless otherwise noted)

Parameter

Static ^{(Note 4)}

Conditions

Symbol

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

V_GS= 0V, I_D= 250µA

V_DS= V_GS, I_D= 250µA

V_GS= ±30V, V_DS= 0V

V_DS= 600V, V_GS= 0V

V_GS= 10V, I_D= 2A

BV_DSS

V_GS(TH)

I_GSS

600

Gate Body Leakage

±100

µA

Zero Gate Voltage Drain Current

I_DSS

0.88

1.4

Drain-Source On-State Resistance

R_DS(ON)

Dynamic ^{(Note 5)}

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Q_g

Q_gs

Q_gd

C_iss

C_oss

R_g

7.7

1.9

2.8

370

V_DS= 380V, I_D= 3.3A,

V_GS= 10V

V_DS= 100V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Gate Resistance

f = 1MHz, open drain

3.4

Switching ^{(Note 6)}

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= 380V,

R_GEN= 25Ω,

I_D= 3.3A, V_GS= 10V,

Source-Drain Diode^{(Note 4)}

Forward On Voltage

Reverse Recovery Time

Reverse Recovery Charge

163

1.4

I_S= 3.3A, V_GS= 0V

V_SD

t_rr

μC

V_R= 200V, I_S= 2A

dI_F/dt = 100A/μs

Q_rr

Notes:

1. Current limited by package

2. Pulse width limited by the maximum junction temperature

3. L = 50mH, I_AS= 1.6A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%

5. For DESIGN AID ONLY, not subject to production testing.

6. Switching time is essentially independent of operating temperature.

2/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

Electrical Characteristics Curves

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Gate-Source Voltage vs. Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Current vs. Voltage

3/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

Electrical Characteristics Curves

BV_DSSvs. Junction Temperature

Capacitance vs. Drain-Source Voltage

Maximum Safe Operating Area (DPAK/IPAK)

Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)

10¹

10⁰

10^-1

10^-2

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single pulse

10^-3

10^-4

10^-7

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

Square Wave Pulse Duration (sec)

4/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

TO-251 (IPAK) Mechanical Drawing

Unit: Millimeter

Marking Diagram

= Year Code

M = Month Code for Halogen Free Product

(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,

X=Oct, Y=Nov, Z=Dec)

= Lot Code

5/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

TO-252 (DPAK) Mechanical Drawing

Unit: Millimeters

Marking Diagram

= Year Code

M = Month Code for Halogen Free Product

(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,

X=Oct, Y=Nov, Z=Dec)

= Lot Code

6/7

Version: A14

TSM60N1R4

600V, 3.3A, 1.4Ω

N-Channel Power MOSFET

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

7/7

Version: A14

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