KI4923DY
更新时间：2025-05-12 12:38:41
品牌：TYSEMI
描述：TrenchFET Power MOSFETS Advanced High Cell Density Process
概述
数据手册KI4923DY 概述
TrenchFET Power MOSFETS Advanced High Cell Density Process TrenchFET功率MOSFET，先进的高密度工艺
KI4923DY 数据手册
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Product specification
KI4923DY
Features
TrenchFET Power MOSFETS
Advanced High Cell Density Process
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
7,8: Drain 1
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
10 secs
Steady State
-30
20
Unit
V
Gate-Source Voltage
VGS
-8.3
-6.2
-5
TA = 25
ID
Continuous Drain Current (TJ = 150 ) *
-6.6
TA = 70
A
Pulsed Drain Current
-30
IDM
IS
Continuous Source Current *
-1.7
2
-0.9
1.1
0.7
TA = 25
TA = 70
Maximum Power Dissipation *
PD
W
1.3
Operating Junction and Storage Temperature Range
Parameter
-55 to 150
TJ, Tstg
Symbol
Typ
45
Max
62.5
110
35
Unit
/W
t
10 sec
Maximum Junction-to-Ambient*
RthJA
RthJF
Steady-State
Steady-State
85
Maximum Junction-to-Foot (Drain)
26
* Surface Mounted on 1" X 1' FR4 Board.
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4008-318-123
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Product specification
KI4923DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Symbol
VGS(th)
IGSS
Testconditons
Min
-1
Typ
Max
-3
Unit
V
VDS = VGS, ID = -250
A
VDS = 0 V, VGS = 20 V
VDS = -24V, VGS = 0 V
VDS = -24V, VGS = 0 V, TJ = 85
VDS =- 5 V, VGS = -10 V
VGS = -10 V, ID = -8.3A
VGS = -4.5 V, ID = -6.8A
VDS = -10 V, ID = -8.3A
IS = -1.7 A, VGS = 0 V
nA
A
100
-1
Zero Gate Voltage Drain Current
On-State Drain Current*
IDSS
ID(on)
rDS(on)
-25
A
-30
A
0.017
0.025
26
0.021
.031
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
gfs
VSD
Qg
S
-0.8
45.5
6.5
-1.2
70
V
nC
nC
nC
ns
ns
ns
ns
ns
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = -15V, VGS = -10 V, ID = -8.3 A
12.6
15
Turn-On Delay Time
Rise Time
25
15
10
VDD = -15 V, RL = 15
Turn-Off Delay Time
Fall Time
td(off)
tf
135
80
210
120
110
ID = -1 A, VGEN = -10V, RG = 6
Source-Drain Reverse Recovery Time
trr
70
IF = -1.7 A, di/dt = 100 A/
s
* Pulse test; pulse width
300 s, duty cycle
2%.
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4008-318-123
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