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KI4923DY

更新时间：2025-06-29 12:38:41

品牌：TYSEMI

描述：TrenchFET Power MOSFETS Advanced High Cell Density Process

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免费 PCB/SMT

概述
数据手册

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KI4923DY 概述

TrenchFET Power MOSFETS Advanced High Cell Density Process TrenchFET功率MOSFET，先进的高密度工艺

KI4923DY 数据手册

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SMD Type

Product specification

KI4923DY

Features

TrenchFET Power MOSFETS

Advanced High Cell Density Process

1: Source 1

2: Gate 1

3: Source 2

4: Gate 2

7,8: Drain 1

5,6: Drain 2

Absolute Maximum Ratings Ta = 25

Parameter

Drain-Source Voltage

Symbol

V^DS

10 secs

Steady State

-30

Unit

Gate-Source Voltage

V^GS

-8.3

-6.2

-5

T^A= 25

Continuous Drain Current (T^J= 150 ) *

-6.6

T^A= 70

Pulsed Drain Current

-30

I^DM

I^S

Continuous Source Current *

-1.7

-0.9

1.1

0.7

T^A= 25

T^A= 70

Maximum Power Dissipation *

P^D

1.3

Operating Junction and Storage Temperature Range

Parameter

-55 to 150

T^J, T^stg

Symbol

Typ

Max

62.5

110

Unit

10 sec

Maximum Junction-to-Ambient*

R^thJA

R^thJF

Steady-State

Maximum Junction-to-Foot (Drain)

* Surface Mounted on 1" X 1' FR4 Board.

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4008-318-123

SMD Type

Product specification

KI4923DY

Electrical Characteristics Ta = 25

Parameter

Gate Threshold Voltage

Gate-Body Leakage

Symbol

V^GS(th)

I^GSS

Testconditons

Min

-1

Typ

Max

-3

Unit

V^DS= V^GS, I^D= -250

V^DS= 0 V, V^GS= 20 V

V^DS= -24V, V^GS= 0 V

V^DS= -24V, V^GS= 0 V, T^J= 85

V^DS=- 5 V, V^GS= -10 V

V^GS= -10 V, I^D= -8.3A

V^GS= -4.5 V, I^D= -6.8A

V^DS= -10 V, I^D= -8.3A

I^S= -1.7 A, V^GS= 0 V

100

-1

Zero Gate Voltage Drain Current

On-State Drain Current*

I^DSS

I^D(on)

r^DS(on)

-25

-30

0.017

0.025

0.021

.031

Drain-Source On-State Resistance*

Forward Transconductance*

Schottky Diode Forward Voltage*

Total Gate Charge

g^fs

V^SD

Q^g

-0.8

45.5

6.5

-1.2

Gate-Source Charge

Gate-Drain Charge

Q^gs

Q^gd

t^d(on)

t^r

V^DS= -15V, V^GS= -10 V, I^D= -8.3 A

12.6

Turn-On Delay Time

Rise Time

V^DD= -15 V, R^L= 15

Turn-Off Delay Time

Fall Time

t^d(off)

t^f

135

210

120

110

I^D= -1 A, V^GEN= -10V, R^G= 6

Source-Drain Reverse Recovery Time

t^rr

I^F= -1.7 A, di/dt = 100 A/

* Pulse test; pulse width

300 s, duty cycle

2%.

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sales@twtysemi.com

2 of 2

4008-318-123

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