1N5224BTAP
更新时间:2025-04-23 13:02:41
品牌:VISHAY
描述:DIODE 2.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode
1N5224BTAP 概述
DIODE 2.8 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2, Voltage Regulator Diode 稳压二极管
1N5224BTAP 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-35 |
包装说明: | ROHS COMPLIANT, GLASS PACKAGE-2 | 针数: | 2 |
Reach Compliance Code: | unknown | 风险等级: | 5.57 |
Base Number Matches: | 1 |
1N5224BTAP 数据手册
通过下载1N5224BTAP数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• Standard Zener voltage tolerance is 5 ꢀ
• These diodes are also available in MiniMELF
case with the type designation TZM5221 to
TZM5267, SOT-23 case with the type
designations MMBZ5225 to MMBZ5267 and
SOD-123 case with the types designations
MMSZ5225 to MMSZ5267
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
• Halogen-free according to IEC 61249-2-21 definition
PARAMETER
VZ range nom.
Test current IZT
VZ specification
Int. construction
VALUE
UNIT
V
2.4 to 75
APPLICATIONS
• Voltage stabilization
1.7 to 20
mA
Thermal equilibrium
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
1N5221B to 1N5267B
1N5221B to 1N5267B
1N5221B to 1N5267B-series-TR
1N5221B to 1N5267B-series-TAP
10 000 per 13" reel
30 000/box
10 000 per ammopack
(52 mm tape)
30 000/box
PACKAGE
MOLDING COMPOUND MOISTURE SENSITIVITY
SOLDERING
CONDITIONS
PACKAGE NAME
WEIGHT
FLAMMABILITY RATING
LEVEL
MSL level 1
(according J-STD-020)
DO-35
125 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
mW
mA
K/W
°C
Power dissipation
TL 25 °C
Ptot
IZ
500
Ptot/VZ
300
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I = 4 mm, TL = constant
RthJA
Tj
175
Tstg
VF
- 65 to + 175
1.1
°C
IF = 200 mA
V
Rev. 2.0, 31-Jan-12
Document Number: 85588
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LEAKAGE
CURRENT
ZENER VOLTAGE
RANGE (1)
DYNAMIC RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
TEST CURRENT
PART NUMBER
(1)
VZ at IZT1
V
IZT1
IZT2
IR at VR
ZZ at IZT1
ZZK at IZT2
VZ
mA
μA
V
%/K
NOM.
2.4
2.5
2.7
2.8
3
MAX.
100
100
75
75
50
25
15
10
5
MAX.
30
30
30
30
29
28
24
23
22
19
17
11
7
MAX.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
TYP.
- 0.085
- 0.085
- 0.08
- 0.08
- 0.075
- 0.07
- 0.065
- 0.06
0.055
0.03
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
1N5264B
1N5265B
1N5266B
1N5267B
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
1
1
1
1
2
2
5
5
0.03
5
5
5
3
3.5
4
0.038
0.038
0.045
0.05
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
7
3
3
3
5
6
6.5
6.5
7
5
6
8
500
500
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.088
0.089
0.09
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
3
3
3
8
600
600
600
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
8
2
1
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
600
600
600
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
2.7
2.5
2.2
2.1
2
1000
1100
1300
1400
1400
1600
1700
1.8
1.7
Note
(1)
Based on DC measurement at thermal equilibrium; lead length = 9.5 (3/8"); thermal resistance of heat sink = 30 K/W
Rev. 2.0, 31-Jan-12
Document Number: 85588
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
600
500
400
300
500
400
300
200
l
l
200
100
0
100
0
TL = constant
200
Tamb - Ambient Temperature (°C)
0
80
120
160
40
20
0
5
10
15
95 9602
I - Lead Length (mm)
95 9611
Fig. 1 - Thermal Resistance vs. Lead Length
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
15
10
1000
Tj = 25 °C
100
5
IZ = 5 mA
IZ = 5 mA
10
0
- 5
1
25
0
10
15
20
0
10
20
30
40
50
5
95 9598
VZ - Z-Voltage (V)
95 9600
VZ - Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Fig. 5 - Temperature Coefficient of VZ vs. Z-Voltage
Conditions at Tamb= 25 °C
1.3
200
VZtn = VZt/VZ (25 °C)
1.2
TKVZ = 10 x 10-4/K
150
8 x 10-4/K
VR = 2 V
6 x 10-4/K
1.1
Tj = 25 °C
4 x 10-4/K
2 x 10-4/K
100
0
1.0
0.9
- 2 x 10-4/K
50
- 4 x 10-4/K
0
0.8
25
240
0
0
10
15
20
- 60
60
120
180
5
95 9599
Tj - Junction Temperature (°C)
95 9601
VZ - Z-Voltage (V)
Fig. 3 - Typical Change of Working Voltage vs.
Fig. 6 - Diode Capacitance vs. Z-Voltage
Junction Temperature
Rev. 2.0, 31-Jan-12
Document Number: 85588
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
50
100
Ptot = 500 mW
Tamb = 25 °C
10
1
40
30
20
10
Tj = 25 °C
0.1
0.01
0.001
0
1.0
0
0.2
0.4
0.6
0.8
35
15
20
25
30
VF - Forward Voltage (V)
95 9607
95 9605
VZ - Z-Voltage (V)
Fig. 7 - Forward Current vs. Forward Voltage
Fig. 9 - Z-Current vs. Z-Voltage
1000
100
10
100
80
IZ = 1 mA
Ptot = 500 mW
Tamb = 25 °C
60
5 mA
40
20
0
10 mA
Tj = 25 °C
15 20
1
25
12
20
0
5
10
0
4
6
8
VZ - Z-Voltage (V)
95 9606
VZ - Z-Voltage (V)
95 9604
Fig. 8 - Z-Current vs. Z-Voltage
Fig. 10 - Differential Z-Resistance vs. Z-Voltage
1000
tp/T = 0.5
100
tp/T = 0.2
Single Pulse
RthJA = 300 K/W
T = Tjmax - Tamb
10
tp/T = 0.01
tp/T = 0.1
tp/T = 0.02
tp/T = 0.05
iZM = (- VZ + (VZ2 + 4rzj x T/Zthp 1/2)/(2rzj)
)
1
10-1
100
101
102
95 9603
tp - Pulse Length (ms)
Fig. 11 - Thermal Response
Rev. 2.0, 31-Jan-12
Document Number: 85588
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N5221B to 1N5267B
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): DO-35_1N52xx
Cathode Identification
26 min. [1.024]
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1 - Date: 19. December 2011
Document no.: S8-V-3906.04-031(4)
94 12648
Rev. 2.0, 31-Jan-12
Document Number: 85588
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
Document Number: 91000
1
1N5224BTAP 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
1N5224BTR | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN | 获取价格 |
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1N5224BTR | CENTRAL | Zener Diode, 2.8V V(Z), 0.5W, Silicon, Unidirectional, DO-35, | 获取价格 |
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1N5224BUR | MICROSEMI | 500 mW GLASS SURFACE MOUNT ZENER DIODES | 获取价格 |
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1N5224BUR | DIGITRON | Zener Diode; Max Peak Repetitive Reverse Voltage: 5; Max TMS Bridge Input Voltage: 0.5; Max DC Reverse Voltage: 30 | 获取价格 |
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1N5224BUR-1 | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2 | 获取价格 |
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1N5224BUR-1E3 | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS, MLL34, MELF-2 | 获取价格 |
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1N5224BUR-1E3TR | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2 | 获取价格 |
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1N5224BUR-1TR | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2 | 获取价格 |
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1N5224BUR-1TRE3 | MICROSEMI | Zener Diode, 2.8V V(Z), 5%, 0.5W, | 获取价格 |
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1N5224BUR-PBF | DIGITRON | Zener Diode | 获取价格 |
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