首页 > BZT52B15-V-G18

BZT52B15-V-G18

更新时间：2025-07-01 23:45:26
品牌：VISHAY
描述：DIODE 15 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

PDF下载

中文翻译

免费 PCB/SMT

BZT52B15-V-G18 概述

DIODE 15 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode

BZT52B15-V-G18 数据手册

通过下载BZT52B15-V-G18数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
BZT52-V-G-Series  
Vishay Semiconductors  
Small Signal Zener Diodes  
Features  
• Silicon planar power zener diodes  
• These diodes are also available in other  
case styles and other configurations  
including: the SOT-23 case with type  
designation BZX84 series, the dual zener  
diode common anode configuration in the  
SOT-23 case with type designation AZ23  
series and the dual zener diode common  
cathode configuration in the SOT-23 case with  
type designation DZ23 series.  
17431  
• The zener voltages are graded according to the  
international E 24 standard.  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOD-123  
Weight: approx. 9.3 mg  
Packaging codes/options:  
18/10 k per 13 " reel (8 mm tape), 10 k/box  
08/3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Zener current see table  
" Characteristics "  
500 2)  
410 1)  
Ptot  
Ptot  
Power dissipation  
Power dissipation  
mW  
mW  
1) Diode on ceramic substrate 0.7 mm; 2.5 mm2 pad areas  
2) Diode on ceramic substrate 0.7 mm; 5 mm2 pad areas  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300 1)  
Unit  
Thermal resistance junction to  
ambient air  
°C/W  
TJ  
Junction temperature  
150  
°C  
°C  
TS  
Storage temperature range  
- 65 to + 150  
1) Valid provided that electrodes are kept at ambient temperature  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.0, 14-Jun-10  
www.vishay.com  
1
BZT52-V-G-Series  
Vishay Semiconductors  
Electrical Characteristics  
Zener voltage  
Test  
current  
Temp.  
coefficient  
Reverse Admissible Zener  
voltage  
Dynamic resistance  
range1)  
current4)  
IZ at IZ at  
Tamb Tamb  
VR at IR  
Marking  
VZ at IZT1  
rzj at IZT1  
rzj at IZT2  
IZT1  
mA  
at IZT1  
=
=
=
Part number  
code  
100 nA  
45 °C  
25 °C  
αVZ  
(10-4/°C)  
V
Ω
V
mA  
min.  
2.2  
2.5  
2.8  
3.1  
3.4  
3.7  
4
max.  
2.6  
2.9  
3.2  
3.5  
3.8  
4.1  
4.6  
5
BZT52C2V4-V-G  
BZT52C2V7-V-G  
BZT52C3V0-V-G  
BZT52C3V3-V-G  
BZT52C3V6-V-G  
BZT52C3V9-V-G  
BZT52C4V3-V-G  
BZT52C4V7-V-G  
BZT52C5V1-V-G  
BZT52C5V6-V-G  
BZT52C6V2-V-G  
BZT52C6V8-V-G  
BZT52C7V5-V-G  
BZT52C8V2-V-G  
BZT52C9V1-V-G  
BZT52C10-V-G  
BZT52C11-V-G  
BZT52C12-V-G  
BZT52C13-V-G  
BZT52C15-V-G  
BZT52C16-V-G  
BZT52C18-V-G  
BZT52C20-V-G  
BZT52C22-V-G  
BZT52C24-V-G  
BZT52C27-V-G  
BZT52C30-V-G  
BZT52C33-V-G  
BZT52C36-V-G  
BZT52C39-V-G  
BZT52C43-V-G  
BZT52C47-V-G  
BZT52C51-V-G  
BZT52C56-V-G  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
Y9  
YA  
YB  
YC  
YD  
YE  
YF  
YG  
YH  
YI  
85  
600  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5  
- 9 to - 4  
- 9 to - 4  
-
-
-
113  
98  
92  
85  
77  
71  
64  
56  
50  
45  
41  
37  
34  
30  
28  
25  
23  
21  
19  
17  
15  
14  
13  
11  
10  
9
-
134  
118  
109  
100  
92  
84  
76  
67  
59  
54  
49  
44  
40  
36  
33  
30  
28  
25  
23  
20  
18  
17  
16  
13  
12  
10  
9
75 (< 83)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
70 (< 78)  
30 (< 60)  
10 (< 40)  
4.8 (< 10)  
4.5 (< 8)  
4 (< 7)  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 480  
< 400  
< 200  
< 150  
< 50  
- 9 to - 3  
-
- 8 to - 3  
-
- 8 to - 3  
-
- 7 to - 3  
-
- 6 to - 1  
-
4.4  
4.8  
5.2  
5.8  
6.4  
7
- 5 to + 2  
-
5.4  
6
- 3 to + 4  
> 0.8  
> 1  
> 2  
> 3  
> 5  
> 6  
> 7  
> 7.5  
> 8.5  
> 9  
> 10  
> 11  
> 12  
> 14  
> 15  
> 17  
> 18  
> 20  
> 22.5  
> 25  
> 27  
> 29  
> 32  
> 35  
> 38  
-
- 2 to + 6  
6.6  
7.2  
7.9  
8.7  
9.6  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
28.9  
32  
- 1 to + 7  
+ 2 to + 7  
+ 3 to + 7  
+ 4 to + 7  
+ 5 to + 8  
+ 5 to + 8  
+ 5 to + 9  
+ 6 to + 9  
+ 7 to + 9  
+ 7 to + 9  
+ 8 to + 9.5  
+ 8 to + 9.5  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
7.7  
8.5  
9.4  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
25.1  
28  
4.5 (< 7)  
4.8 (< 10)  
5.2 (< 15)  
6 (< 20)  
< 50  
< 50  
< 70  
< 70  
7 (< 20)  
< 90  
YK  
YL  
YM  
YN  
YO  
YP  
YR  
YS  
YT  
YU  
YW  
YX  
YY  
YZ  
Z1  
9 (< 25)  
< 110  
< 110  
< 170  
< 170  
< 220  
< 220  
< 220  
< 250  
< 250  
< 250  
< 250  
< 300  
< 700  
< 750  
< 750  
11 (< 30)  
13 (< 40)  
18 (< 50)  
20 (< 50)  
25 (< 55)  
28 (< 80)  
30 (< 80)  
35 (< 80)  
40 (< 80)  
40 (< 90)  
50 (< 90)  
60 (< 100)  
70 (< 100)  
70 (< 100)  
31  
35  
8
34  
38  
8
9
37  
41  
7
8
40  
46  
6
7
44  
50  
5
6
48  
54  
5
6
< 135 2)  
< 150 2)  
< 200 2)  
< 250 2)  
< 1000 3)  
< 1000 3)  
< 1000 3)  
< 1500 3)  
typ. + 10 2)  
typ. + 10 2)  
typ. + 10 2)  
typ. + 10 2)  
Z2  
52  
60  
-
-
BZT52C62-V-G  
BZT52C68-V-G  
BZT52C75-V-G  
Z3  
Z4  
Z5  
58  
64  
70  
66  
72  
79  
2.5  
2.5  
2.5  
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA  
1) Measured with pulses Tp = 5 ms  
2) = IZT1 = 2.5 mA  
3) = IZT2 = 0.5 mA  
4) Valid provided that electrodes are kept at ambient temperature  
www.vishay.com  
2
Document Number 83340  
Rev. 1.0, 14-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
BZT52-V-G-Series  
Vishay Semiconductors  
Electrical Characteristics  
Zener voltage  
Test  
current  
Temp.  
coefficient  
Reverse Admissible Zener  
voltage  
Dynamic resistance  
range1)  
current 4)  
IZ at IZ at  
Tamb Tamb  
VR at IR  
VZ at IZT1  
rzj at IZT1  
rzj at IZT2  
IZT1  
mA  
at IZT1  
=
=
=
Part number  
Marking  
code  
100 nA  
45 °C  
25 °C  
αVZ  
(10-4/°C)  
V
Ω
V
mA  
min.  
max.  
2.45  
2.75  
3.06  
3.37  
3.67  
3.98  
4.39  
4.79  
5.2  
BZT52B2V4-V-G  
BZT52B2V7-V-G  
BZT52B3V0-V-G  
BZT52B3V3-V-G  
BZT52B3V6-V-G  
BZT52B3V9-V-G  
BZT52B4V3-V-G  
BZT52B4V7-V-G  
BZT52B5V1-V-G  
BZT52B5V6-V-G  
BZT52B6V2-V-G  
BZT52B6V8-V-G  
BZT52B7V5-V-G  
BZT52B8V2-V-G  
BZT52B9V1-V-G  
BZT52B10-V-G  
BZT52B11-V-G  
BZT52B12-V-G  
BZT52B13-V-G  
BZT52B15-V-G  
BZT52B16-V-G  
BZT52B18-V-G  
BZT52B20-V-G  
BZT52B22-V-G  
BZT52B24-V-G  
BZT52B27-V-G  
BZT52B30-V-G  
BZT52B33-V-G  
BZT52B36-V-G  
BZT52B39-V-G  
BZT52B43-V-G  
BZT52B47-V-G  
BZT52B51-V-G  
BZT52B56-V-G  
V1  
V2  
V3  
V4  
V5  
V6  
V7  
V8  
V9  
VA  
VB  
VC  
VD  
VE  
VF  
VG  
VH  
VI  
2.35  
2.65  
2.94  
3.23  
3.53  
3.82  
4.21  
4.61  
5
85  
600  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5  
- 9 to - 4  
- 9 to - 4  
-
-
-
113  
98  
92  
85  
77  
71  
64  
56  
50  
45  
41  
37  
34  
30  
28  
25  
23  
21  
19  
17  
15  
14  
13  
11  
10  
9
-
134  
118  
109  
100  
92  
84  
76  
67  
59  
54  
49  
44  
40  
36  
33  
30  
28  
25  
23  
20  
18  
17  
16  
13  
12  
10  
9
75 (< 83)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
80 (< 95)  
70 (< 78)  
30 (< 60)  
10 (< 40)  
4.8 (< 10)  
4.5 (< 8)  
4 (< 7)  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 500  
< 480  
< 400  
< 200  
< 150  
< 50  
- 9 to - 3  
-
- 8 to - 3  
-
- 8 to - 3  
-
- 7 to - 3  
-
- 6 to - 1  
-
- 5 to + 2  
-
- 3 to + 4  
> 0.8  
> 1  
> 2  
> 3  
> 5  
> 6  
> 7  
> 7.5  
> 8.5  
> 9  
> 10  
> 11  
> 12  
> 14  
> 15  
> 17  
> 18  
> 20  
> 22.5  
> 25  
> 27  
> 29  
> 32  
> 35  
> 38  
-
5.49  
6.08  
6.66  
7.35  
8.04  
8.92  
9.8  
5.71  
6.32  
6.94  
7.65  
8.36  
9.28  
10.2  
11.2  
12.2  
13.3  
15.3  
16.3  
18.4  
20.4  
22.4  
24.5  
27.5  
30.6  
33.7  
36.7  
39.8  
43.9  
47.9  
52  
- 2 to + 6  
- 1 to + 7  
+ 2 to + 7  
+ 3 to + 7  
+ 4 to + 7  
+ 5 to + 8  
+ 5 to + 8  
+ 5 to + 9  
+ 6 to + 9  
+ 7 to + 9  
+ 7 to + 9  
+ 8 to + 9.5  
+ 8 to + 9.5  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 8 to + 10  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
+ 10 to + 12  
4.5 (< 7)  
4.8 (< 10)  
5.2 (< 15)  
6 (< 20)  
< 50  
< 50  
< 70  
10.8  
11.8  
12.7  
14.7  
15.7  
17.6  
19.6  
21.6  
23.5  
26.5  
29.4  
32.3  
35.3  
38.2  
42.1  
46.1  
50  
< 70  
7 (< 20)  
< 90  
VK  
VL  
VM  
VN  
VO  
VP  
VR  
VS  
VT  
VU  
VW  
VX  
VY  
VZ  
U1  
U2  
9 (< 25)  
< 110  
< 110  
< 170  
< 170  
< 220  
< 220  
< 220  
< 250  
< 250  
< 250  
< 250  
< 300  
< 700  
< 750  
< 750  
11 (< 30)  
13 (< 40)  
18 (< 50)  
20 (< 50)  
25 (< 55)  
28 (< 80)  
30 (< 80)  
35 (< 80)  
40 (< 80)  
40 (< 90)  
50 (< 90)  
60 (< 100)  
70 (< 100)  
70 (< 100)  
8
8
9
7
8
6
7
5
6
5
6
< 135 2)  
< 150 2)  
< 200 2)  
< 250 2)  
< 1000 3)  
< 1000 3)  
< 1000 3)  
< 1500 3)  
typ. + 10 2)  
typ. + 10 2)  
typ. + 10 2)  
typ. + 10 2)  
54.9  
57.1  
-
-
BZT52B62-V-G  
BZT52B68-V-G  
BZT52B75-V-G  
U3  
U4  
U5  
60.8  
66.6  
73.5  
63.2  
69.4  
76.5  
2.5  
2.5  
2.5  
-
-
-
-
-
-
-
-
-
IZT1 = 5 mA, IZT2 = 1 mA  
1) Measured with pulses Tp = 5 ms  
2) = IZT1 = 2.5 mA  
3) = IZT2 = 0.5 mA  
4) Valid provided that electrodes are kept at ambient temperature  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.0, 14-Jun-10  
www.vishay.com  
3
BZT52-V-G-Series  
Vishay Semiconductors  
Typical Characteristics (T  
= 25 °C unless otherwise specified)  
amb  
mA  
103  
1000  
TJ = 25 °C  
5
4
3
102  
2
IF  
10  
1
rzj  
TJ = 100 °C  
100  
5
4
3
10-1  
10-2  
TJ = 25 °C  
2
100  
2.7  
3.6  
10-3  
10-4  
10-5  
5
4
3
4.7  
5.1  
2
5.6  
1
0
0.2  
0.4  
0.6  
0.8  
VF  
1V  
0.1  
18117  
2
5
1
2
5
10  
2
5 100 mA  
18114  
IZ  
Figure 1. Forward Characteristics  
Figure 4. Dynamic Resistance vs. Zener Current  
pF  
1000  
mW  
500  
400  
300  
200  
100  
0
TJ = 25 °C  
7
5
4
VR = 1 V  
Ctot  
3
2
Ptot  
VR = 2 V  
100  
7
VR = 1 V  
5
4
VR = 2 V  
3
2
10  
1
2
3
4
5
10  
2
3
4
5
100 V  
0
100  
Tamb  
200 °C  
18888  
18118  
VZ at IZ = 5 mA  
Figure 2. Admissible Power Dissipation vs. Ambient Temperature  
Figure 5. Capacitance vs. Zener Voltage  
°C/W  
Ω
100  
103  
7
TJ = 25 °C  
5
4
5
4
3
2
0.5  
RthA  
3
2
33  
rzj  
102  
0.2  
27  
22  
7
0.1  
5
0.05  
0.02  
4
3
10  
18  
2
0.01  
15  
12  
10  
V = 0  
5
4
10  
7
tp  
3
5
4
3
tp  
T
2
PI  
6.8/8.2  
2
T
6.2  
1
1
10-5 10-4 10-3  
10-2 10-1  
tp  
1
10s  
0.1  
18119  
2
5
1
2
5
10  
IZ  
2
5 100 mA  
18116  
Figure 3. Pulse Thermal Resistance vs. Pulse Duration  
Figure 6. Dynamic Resistance vs. Zener Current  
www.vishay.com  
4
Document Number 83340  
Rev. 1.0, 14-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
BZT52-V-G-Series  
Vishay Semiconductors  
mV/°C  
25  
103  
7
Ω
Tj = 25 °C  
5
4
20  
ΔVZ  
5 mA  
1 mA  
Rzj  
3
2
47 + 51  
43  
IZ  
=
Δ
Tj  
20 mA  
39  
15  
10  
36  
102  
7
5
4
5
0
3
2
- 5  
1
18135  
10  
0.1  
2
3
4
5
1
2
3 4 5  
10  
mA  
2
3
4
5
10  
2
3
4
5
100 V  
VZ at IZ = 5 mA  
18120  
IZ  
≥
V
27 V, I = 2 mA  
Figure 7. Dynamic Resistance vs. Zener Current  
Figure 10. Temperature Dependence of Zener Voltage vs.  
Zener Voltage  
V
0.8  
Ω
103  
25  
15  
ΔVZ  
0.7  
VZ at IZ = 5 mA  
5
Rzth = RthA x VZ x  
4
Δ
Tj  
10  
3
2
0.6  
0.5  
0.4  
Rzth  
ΔVZ  
102  
8
7
5
4
3
0.3  
0.2  
0.1  
6.2  
5.9  
2
10  
5.6  
5.1  
5
4
3
0
- 1  
negative  
positive  
2
4.7  
3.6  
- 0.2  
1
100 120 140 C  
Tj  
0
20 40 60 80  
1
2
3
4
5
10  
2
3
4
5
100 V  
18124  
18121  
VZ at IZ = 5 mA  
Figure 8. Thermal Differential Resistance vs. Zener Voltage  
Figure 11. Change of Zener Voltage vs. Junction Temperature  
Ω
100  
mV/°C  
100  
IZ = 5 mA  
7
5
4
ΔVZ  
80  
Rzj  
3
2
Δ
Tj  
60  
10  
7
40  
20  
0
5
4
3
2
T = 25 °C  
IZj = 5 mA  
1
1
2
3
4
5
10  
2
3
4
5
100 V  
0
20  
40  
60  
80  
100 V  
18122  
VZ  
VZ at IZ = 2 mA  
18136  
Figure 9. Dynamic Resistance vs. Zener Voltage  
Figure 12. Temperature Dependence of Zener Voltage vs.  
Zener Voltage  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.0, 14-Jun-10  
www.vishay.com  
5
BZT52-V-G-Series  
Vishay Semiconductors  
mA  
50  
T = 25 °C  
j
3.9  
5.6  
2.7  
6.8  
3.3 4.7  
40  
8.2  
lZ  
30  
20  
Test  
current  
IZ 5 mA  
10  
0
0
1
2
3
4
5
6
7
8
9
10 V  
18158  
V
18111  
Z
Figure 13. Change of Zener Voltage vs. Junction Temperature  
Figure 16. Breakdown Characteristics  
mA  
30  
10  
12  
T = 25 °C  
j
l
Z
15  
20  
18  
22  
27  
Test  
10  
0
current  
33  
36  
I
5 mA  
Z
18159  
0
10  
20  
30  
40 V  
18112  
V
Z
Figure 14. Change of Zener Voltage from Turn-on up to the Point  
of Thermal Equilibrium vs. Zener Voltage  
Figure 17. Breakdown Characteristics  
V
5
VZ = rzth x IZ  
Δ
4
3
2
ΔVZ  
IZ = 5 mA  
1
IZ = 2.5 mA  
0
0
20  
40  
60  
80  
100 V  
18160  
VZ at IZ = 5 mA  
Figure 15. Change of Zener Voltage from Turn-on up to the Point  
of Thermal Equilibrium vs. Zener Voltage  
www.vishay.com  
6
Document Number 83340  
Rev. 1.0, 14-Jun-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
BZT52-V-G-Series  
Vishay Semiconductors  
18157  
Figure 18. Breakdown Characteristics  
Package Dimensions in millimeters (inches): SOD-123  
0.45 (0.018)  
0.25 (0.010)  
0.5 (0.020) ref.  
Cathode bar  
Mounting Pad Layout  
2.85 (0.112)  
2.55 (0.100)  
0.85 (0.033)  
0.85 (0.033)  
3.85 (0.152)  
2.5 (0.098)  
3.55 (0.140)  
Rev. 4 - Date: 24. Sep. 2009  
Document no.: S8-V-3910.01-001 (4)  
17432  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number 83340  
Rev. 1.0, 14-Jun-10  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

BZT52B15-V-G18 相关器件

型号 制造商 描述 价格 文档
BZT52B15BS MCC 400 mW Zener Diode 3.0 to 51 Volts 获取价格
BZT52B15BS YANGJIE SOD-323 获取价格
BZT52B15HE3 MCC Tape : 3K/Reel, 120K/Ctn; 获取价格
BZT52B15JS MCC 200 mW Zener Diode 3.0 to 75 Volts 获取价格
BZT52B15JS-TP MCC 稳压精度:±2%;最大耗散功率（PD）:200mW;反向电流（Ir）:100nA@10.5V;额定稳压值(Vz):15V;元器件封装:SOD-323; 获取价格
BZT52B15JSHE3 MCC Tape&Reel: 3Kpcs/Reel; 获取价格
BZT52B15L BL Galaxy Electrical Zener Diode 获取价格
BZT52B15L BL Galaxy Electrical 15V,100mW,Surface Mount Zener Diodes 获取价格
BZT52B15L3P YANGJIE DFN1006-2L 获取价格
BZT52B15L3P MCC Tape&Reel: 10Kpcs/Reel; 获取价格

BZT52B15-V-G18 相关文章

  • 5V 过电压保护回路电路解析：复杂原理源于简单设计
    2025-07-04
    7
  • 先进封装：台积电、英特尔、三星等大厂的新战场
    2025-07-04
    10
  • 探秘台积电 SoW：从起源到应用的深度剖析
    2025-07-04
    11
  • 英特尔战略调整：舍弃 18A，全力进军 1.4nm 制程
    2025-07-04
    12

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286