概述
数据手册BZT52B16-E3-18 概述
DIODE ZENER 500MW SOD-123
BZT52B16-E3-18 数据手册
通过下载BZT52B16-E3-18数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载BZT52-Series
Vishay Semiconductors
www.vishay.com
Small Signal Zener Diodes
FEATURES
Available
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
click logo to get started
DESIGN SUPPORT TOOLS
• Base P/N-E3 - RoHS-compliant, commercial
grade
Models
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
2.4 to 75
2.5; 5
UNIT
V
VZ range nom.
Test current IZT
VZ specification
Circuit configuration
mA
Pulse current
Single
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZT52C2V4-E3-08 to BZT52C75-E3-08
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
3000 (8 mm tape on 7" reel)
15 000/box
BZT52-series
10 000 (8 mm tape on 13" reel)
10 000/box
PACKAGE
MOLDING COMPOUND
WEIGHT
MOISTURE SENSITIVITY
LEVEL
PACKAGE NAME
SOLDERING CONDITIONS
FLAMMABILITY RATING
MSL level 1
(according J-STD-020)
SOD-123
10.3 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Diode on ceramic substrate 0.7 mm;
Ptot
500
mW
5 mm2 pad areas
Power dissipation
Diode on ceramic substrate 0.7 mm;
Ptot
410
mW
2.5 mm2 pad areas
Zener current
See table “Electrical Characteristics “
Valid provided that electrodes are kept at
ambient temperature
Thermal resistance junction to ambient air
RthJA
300
K/W
Tj
Junction temperature
150
°C
°C
°C
Tstg
Top
Storage temperature range
Operating temperature range
-65 to +150
-55 to +150
Rev. 1.9, 20-Feb-18
Document Number: 85760
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
REVERSE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT (4)
RANGE (1)
CURRENT VOLTAGE
ZZ at
IZT1
ZZK at
IZT2
IZ at
IZ at
PART
NUMBER
MARKING
CODE
VZ at IZT1
IZT1 IZT2 VR at IR
mA
VZ
T
amb = 45 °C Tamb = 25 °C
V
V
nA
10-4/°C
mA
MIN. NOM. MAX.
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
BZT52C56
BZT52C62
BZT52C68
BZT52C75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
2.2
2.5
2.8
3.1
3.4
3.7
4
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
85
600
-9 to -4
-9 to -4
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
-9 to -3
-8 to -3
-8 to -3
-7 to -3
-6 to -1
4.4
4.8
5.2
5.8
6.4
7
-5 to +2
5.4
6
> 0.8 100 30 (< 60)
-3 to +4
> 1
> 2
> 3
> 5
> 6
> 7
100 10 (< 40)
100 4.8 (< 10)
100 4.5 (< 8)
-2 to +6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
-1 to +7
+2 to +7
+3 to +7
+4 to +7
+5 to +8
+5 to +8
+5 to +9
+6 to +9
+7 to +9
+7 to +9
+8 to +9.5
+8 to +9.5
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+10 to +12
+10 to +12
+10 to +12
+10 to +12
100
4 (< 7)
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
100 4.5 (< 7)
100 4.8 (< 10)
< 50
< 50
> 7.5 100 5.2 (< 15)
> 8.5 100 6 (< 20)
< 70
11
< 70
12
> 9
100 7 (< 20)
< 90
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
13
> 10 100 9 (< 25)
> 11 100 11 (< 30)
> 12 100 13 (< 40)
> 14 100 18 (< 50)
> 15 100 20 (< 50)
> 17 100 25 (< 55)
> 18 100 28 (< 80)
> 20 100 30 (< 80)
> 22.5 100 35 (< 80)
> 25 100 40 (< 80)
> 27 100 40 (< 90)
> 29 100 50 (< 90)
> 32 100 60 (< 100)
> 35 100 70 (< 100)
> 38 100 70 (< 100)
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
15
16
18
20
22
24
27
30
31
33
35
8
34
36
38
8
9
37
39
41
7
8
40
43
46
6
7
44
47
50
5
6
48
51
54
5
6
X2
52
56
60
2.5 0.5
2.5 0.5
2.5 0.5
2.5 0.5
-
-
-
-
-
-
-
-
< 135 (2) < 1000 (3) typ. +10 (2)
< 150 (2) < 1000 (3) typ. +10 (2)
< 200 (2) < 1000 (3) typ. +10 (2)
< 250 (2) < 1500 (3) typ. +10 (2)
-
-
X3
58
62
66
-
-
X4
64
68
72
-
-
X5
70
75
79
-
-
Notes
•
IZT1 = 5 mA, IZT2 = 1 mA
Measured with pulses tp = 5 ms
IZT1 = 2.5 mA
(1)
(2)
(3)
(4)
IZT2 = 0.5 mA
Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 20-Feb-18
Document Number: 85760
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
TEST
REVERSE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT (4)
RANGE (1)
CURRENT VOLTAGE
ZZK at
IZT2
IZ at
IZ at
PART
NUMBER
MARKING
CODE
VZ at IZT1
IZT1 IZT2 VR at IR
mA
ZZ at IZT1
VZ
Tamb = 45 °C Tamb = 25 °C
V
V
nA
10-4/°C
mA
MIN. NOM. MAX.
BZT52B2V4
BZT52B2V7
BZT52B3V0
BZT52B3V3
BZT52B3V6
BZT52B3V9
BZT52B4V3
BZT52B4V7
BZT52B5V1
BZT52B5V6
BZT52B6V2
BZT52B6V8
BZT52B7V5
BZT52B8V2
BZT52B9V1
BZT52B10
BZT52B11
BZT52B12
BZT52B13
BZT52B15
BZT52B16
BZT52B18
BZT52B20
BZT52B22
BZT52B24
BZT52B27
BZT52B30
BZT52B33
BZT52B36
BZT52B39
BZT52B43
BZT52B47
BZT52B51
BZT52B56
BZT52B62
BZT52B68
BZT52B75
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5
5
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
85
600
-9 to -4
-9 to -4
-
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
-
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
5
1
-9 to -3
5
1
-8 to -3
5
1
-8 to -3
5
1
-7 to -3
5
1
-6 to -1
5
1
-5 to +2
5
1
> 0.8 100 30 (< 60)
-3 to +4
5.49
6.08
6.66
7.35
8.04
8.92
9.8
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
5
1
> 1
> 2
> 3
> 5
> 6
> 7
100 10 (< 40)
100 4.8 (< 10)
-2 to +6
5
1
-1 to +7
5
1
100
100
100
4.5 (< 8)
4 (< 7)
+2 to +7
+3 to +7
+4 to +7
+5 to +8
+5 to +8
+5 to +9
+6 to +9
+7 to +9
+7 to +9
+8 to +9.5
+8 to +9.5
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+8 to +10
+10 to +12
+10 to +12
+10 to +12
+10 to +12
5
1
5
1
4.5 (< 7)
< 50
5
1
100 4.8 (< 10)
< 50
5
1
> 7.5 100 5.2 (< 15)
< 70
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
11
5
1
> 8.5 100
> 9 100
> 10 100
6 (< 20)
7 (< 20)
9 (< 25)
< 70
12
5
1
< 90
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
X1
13
5
1
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
15
5
1
> 11 100 11 (< 30)
> 12 100 13 (< 40)
> 14 100 18 (< 50)
> 15 100 20 (< 50)
> 17 100 25 (< 55)
> 18 100 28 (< 80)
> 20 100 30 (< 80)
> 22.5 100 35 (< 80)
> 25 100 40 (< 80)
> 27 100 40 (< 90)
> 29 100 50 (< 90)
16
5
1
18
5
1
20
5
1
22
5
1
24
5
1
27
5
1
30
5
1
33
5
1
8
36
5
1
8
9
39
5
1
7
8
43
5
1
> 32 100 60 (< 100)
> 35 100 70 (< 100)
> 38 100 70 (< 100)
6
7
47
5
1
5
6
51
5
1
5
6
X2
54.9
60.8
66.6
73.5
56
57.1
63.2
69.4
76.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
-
-
-
-
-
-
-
-
< 135 (2) < 1000 (3) typ. +10 (2)
< 150 (2) < 1000 (3) typ. +10 (2)
< 200 (2) < 1000 (3) typ. +10 (2)
< 250 (2) < 1500 (3) typ. +10 (2)
-
-
X3
62
-
-
X4
68
-
-
X5
75
-
-
Notes
•
IZT1 = 5 mA, IZT2 = 1 mA
Measured with pulses tp = 5 ms
IZT1 = 2.5 mA
(1)
(2)
(3)
(4)
IZT2 = 0.5 mA
Valid provided that electrodes are kept at ambient temperature
Rev. 1.9, 20-Feb-18
Document Number: 85760
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
103
Ω
100
TJ = 25 °C
102
10
5
4
IF
3
2
33
rzj
TJ = 100 °C
27
22
1
10-1
10-2
10
18
15
TJ = 25 °C
5
4
12
10-3
10-4
10-5
3
10
2
6.8/8.2
6.2
1
0
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
10
IZ
2
5 100 mA
VF
18114
Fig. 1 - Forward characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
Ω
103
500
400
300
200
100
0
Tj = 25 °C
7
5
4
Rzj
3
2
47 + 51
43
Ptot
39
36
102
7
5
4
3
2
10
0.1
2
3
4
5
1
2
3
4
5
10
mA
0
100
Tamb
200 °C
18120
IZ
18888
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Dynamic Resistance vs. Zener Current
Ω
Ω
1000
103
ΔVZ
TJ = 25 °C
5
Rzth = RthA x VZ
x
5
4
3
4
3
2
Δ
Tj
2
Rzth
rzj
102
100
5
4
3
5
4
3
2
2
10
5
4
3
10
5
4
3
2.7
3.6
4.7
5.1
negative
positive
10
2
2
5.6
1
1
0.1
18117
2
5
1
2
5
10
2
5 100 mA
1
2
3
4
5
2
3
4
5
100 V
IZ
18121
VZ at IZ = 5 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.9, 20-Feb-18
Document Number: 85760
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
ΔVZ
80
60
Rzj
3
2
Δ
Tj
10
7
40
20
0
5
4
3
2
T = 25 °C
IZj = 5 mA
1
1
2
3
4
5
10
2
3
4
5
100 V
0
20
40
60
80
100 V
18122
VZ
VZ at IZ = 2 mA
18136
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
V
9
8
20
ΔVZ
V
at I = 5 mA
Z
Z
7
6
5 mA
ΔV
Z
51
1 mA
IZ
=
Δ
Tj
20 mA
15
10
5
43
36
4
3
2
5
1
0
0
I
= 5 mA
Z
- 1
0
20
40
60
80
100
T
120 140 °C
- 5
18158
j
1
2
3
4
5
10
2
3
4
5
100 V
18135
VZ at IZ = 5 mA
≥
V
27 V, I = 2 mA
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
Zener Voltage
V
V
1.6
0.8
25
15
ΔV = r
x I
Z
Z
Zth
I = 5 mA
Z
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.7
VZ at IZ = 5 mA
V
>= 56 V; I = 2.5 mA
Z
10
Z
0.6
0.5
0.4
ΔV
Z
ΔVZ
8
7
0.3
0.2
0.1
6.2
5.9
5.6
5.1
0
- 1
- 0.2
- 0.4
4.7
3.6
1
10
100 V
- 0.2
V
at I = 5 mA
Z
Z
18159
100 120 140 C
Tj
0
20 40 60 80
18124
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Rev. 1.9, 20-Feb-18
Document Number: 85760
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
V
5
mA
50
V = rzth x IZ
T = 25 °C
j
Δ
3.9
5.6
Z
2.7
6.8
3.3 4.7
4
3
2
40
8.2
lZ
ΔVZ
30
20
IZ = 5 mA
Test
1
current
IZ 5 mA
10
0
IZ = 2.5 mA
0
0
20
40
60
80
100 V
0
1
2
3
4
5
6
7
8
9
10 V
18160
VZ at IZ = 5 mA
V
18111
Z
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 14 - Breakdown Characteristics
mA
30
10
12
T = 25 °C
j
l
Z
15
20
18
22
27
Test
10
0
current
33
36
I
5 mA
Z
0
10
20
30
40 V
18112
V
Z
Fig. 15 - Breakdown Characteristics
18157
Fig. 16 - Breakdown Characteristics
Rev. 1.9, 20-Feb-18
Document Number: 85760
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZT52-Series
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.9, 20-Feb-18
Document Number: 85760
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
BZT52B16-E3-18 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BZT52B16-FL-H | FORMOSA | Status : Active; Package : SOD-123FL; PD(W) : 0.5; VZ Min.(V) : 15.68; VZ Nom.(V) : 16; VZ Max.(V) : 16.32; IZ(mA) : 5; AEC-Q101Qualified : No; | 获取价格 |
|
| BZT52B16-FL-Q1-H | FORMOSA | Status : Active; Package : SOD-123FL; PD(W) : 0.5; VZ Min.(V) : 15.68; VZ Nom.(V) : 16; VZ Max.(V) : 16.32; IZ(mA) : 5; AEC-Q101Qualified : Yes; | 获取价格 |
|
| BZT52B16-G | VISHAY | AEC-Q101 qualified | 获取价格 |
|
| BZT52B16-G | TSC | 2% Zener Voltage Tolerance Zener Diode | 获取价格 |
|
| BZT52B16-G3-08 | VISHAY | Zener Diode, 16V V(Z), 1.88%, 0.5W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52B16-G3-18 | VISHAY | Zener Diode, 16V V(Z), 1.88%, 0.5W, Silicon, Unidirectional, GREEN, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52B16-GS08 | VISHAY | Zener Diode, 16V V(Z), 1.88%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52B16-GS18 | VISHAY | Zener Diode, 16V V(Z), 1.88%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52B16-HE3-18 | VISHAY | Zener Diode, 16V V(Z), 1.88%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 |
|
| BZT52B16-Q | DIOTEC | Zener Diodes | 获取价格 |
|
BZT52B16-E3-18 相关文章
理想二极管控制器在太阳能旁路电路的运用及输入电压范围拓展方案
- 2025-04-25
- 14
三星押注下一代DRAM，存储巨头预警市场风险
- 2025-04-25
- 16
HBM4 深度剖析：特性、应用及发展难题
- 2025-04-25
- 17
突破移动机器人设计瓶颈，恩智浦 MR-VMU-RT1176 VMU引领变革
- 2025-04-25
- 17
