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BZT52B5V1-GS08

更新时间：2025-04-27 14:04:08

品牌：VISHAY

描述：Zener Diode, 5.1V V(Z), 5.8%, 0.5W,

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BZT52B5V1-GS08 概述

Zener Diode, 5.1V V(Z), 5.8%, 0.5W, 齐纳二极管

BZT52B5V1-GS08 规格参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.82
Is Samacsys：	N	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	60 Ω
JESD-609代码：	e3	元件数量：	1
最高工作温度：	150 °C	最大功率耗散：	0.5 W
标称参考电压：	5.1 V	子类别：	Voltage Reference Diodes
表面贴装：	YES	端子面层：	Matte Tin (Sn)
最大电压容差：	5.8%	工作测试电流：	5 mA
Base Number Matches：	1

BZT52B5V1-GS08 数据手册

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BZT52-Series

Vishay Semiconductors

Small Signal Zener Diodes

Features

• Silicon Planar Power Zener Diodes

• These diodes are also available in other case

styles and other configurations including: the

SOT-23 case with type designation BZX84 series,

the dual zener diode common anode configuration

in the SOT-23 case with type designation AZ23

series and the dual zener diode common cathode

configuration in the SOT-23 case with type desig-

nation DZ23 series.

17431

• The Zener voltages are graded according to the

international E 24 standard.

Mechanical Data

Case: SOD-123 Plastic case

Weight: approx. 9.3 mg

Packaging Codes/Options:

GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box

GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Symbol

Value

Unit

Zener current see table "

Characteristics "

Power dissipation

tot

500

410

Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas

Diode on ceramic substrate 0.7 mm; 5 mm pad areas

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

°C/W

thJA

300

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

Valid provided that electrodes are kept at ambient temperature

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

BZT52-Series

Vishay Semiconductors

Electrical Characteristics

Partnumber Marking

Zener Voltage

Dynamic Resistance

@ I @ I

Test

Current

Temp.

Coefficient

Reverse Admissible Zener

Code

Voltage

Range

Current

@ I

I @

ZT1

ZT2

ZT1

amb

100 nA,

45 °C,

25 °C,

Ω

-4

(10 /°C)

min

2.2

2.5

2.8

3.1

3.4

3.7

max

BZT52C2V4

BZT52C2V7

BZT52C3

2.6

2.9

3.2

3.5

3.8

4.1

4.6

600

2.5

- 9 to - 4

- 9 to - 3

- 8 to - 3

- 7 to - 3

- 6 to - 1

- 5 to +2

- 3 to +4

- 2 to +6

- 1 to +7

+2 to +7

+3 to +7

+4 to +7

+5 to +8

+5 to +9

+6 to +9

+7 to +9

+8 to +9.5

+8 to +10

+10 to +12

113

134

118

109

100

75 (< 83)

80 (< 95)

70 (< 78)

30 (< 60)

10 (< 40)

4.8 (< 10)

4.5 (< 8)

4 (< 7)

< 500

< 480

< 400

< 200

< 150

< 50

BZT52C3V3

BZT52C3V6

BZT52C3V9

BZT52C4V3

BZT52C4V7

BZT52C5V1

BZT52C5V6

BZT52C6V2

BZT52C6V8

BZT52C7V5

BZT52C8V2

BZT52C9V1

BZT52C10

BZT52C11

BZT52C12

BZT52C13

BZT52C15

BZT52C16

BZT52C18

BZT52C20

BZT52C22

BZT52C24

BZT52C27

BZT52C30

BZT52C33

BZT52C36

BZT52C39

BZT52C43

BZT52C47

BZT52C51

BZT52C56

4.4

4.8

5.2

5.8

6.4

5.4

> 0.8

> 1

> 2

> 3

> 5

> 6

> 7

> 7.5

> 8.5

> 9

> 10

> 11

> 12

> 14

> 15

> 17

> 18

> 20

> 22.5

> 25

> 27

> 29

> 32

> 35

> 38

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

7.7

8.5

9.4

4.5 (< 7)

4.8 (< 10)

5.2 (< 15)

6 (< 20)

< 50

< 70

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

< 70

7 (< 20)

< 90

9 (< 25)

< 110

< 170

< 220

< 250

< 300

< 700

< 750

11 (< 30)

13 (< 40)

18 (< 50)

20 (< 50)

25 (< 55)

28 (< 80)

30 (< 80)

35 (< 80)

40 (< 80)

40 (< 90)

50 (< 90)

60 (< 100)

70 (< 100)

(2)

(3)

(2)

< 135

< 1000

< 1500

typ. +10

(2)

BZT52C62

BZT52C68

BZT52C75

2.5

< 150

typ. +10

(2)

< 200

typ. +10

(2)

< 250

typ. +10

= 5 mA, I

= 1 mA

ZT1

ZT2

(1)

(2)

(3)

(4)

Measured with pulses T = 5 ms

= I

= 2.5 mA

= 0.5 mA

ZT1

ZT2

Valid provided that electrodes are kept at ambient temperature.

www.vishay.com

Document Number 85760

Rev. 1.5, 13-Sep-04

BZT52-Series

Vishay Semiconductors

Electrical Characteristics

Partnumber Marking

Zener Voltage

Dynamic Resistance

@ I @ I

Test

Current

Temp.

Coefficient

Reverse Admissible Zener

Code

Voltage

Range

Current

@ I

I @

ZT1

ZT2

ZT1

amb

100 nA,

45 °C,

25 °C,

Ω

-4

(10 /°C)

min

2.35

2.65

2.94

3.23

3.53

3.82

4.21

4.61

max

BZT52B2V4

BZT52B2V7

BZT52B3

2.45

2.75

3.06

3.37

3.67

3.98

4.39

4.79

5.2

600

2.5

- 9 to - 4

113

134

118

109W5

100

75 (< 83)

80 (< 95)

70 (< 78)

30 (< 60)

10 (< 40)

4.8 (< 10)

4.5 (< 8)

4 (< 7)

< 500

< 480

< 400

< 200

< 150

< 50

- 9 to - 3

BZT52B3V3

BZT52B3V6

BZT52B3V9

BZT52B4V3

BZT52B4V7

BZT52B5V1

BZT52B5V6

BZT52B6V2

BZT52B6V8

BZT52B7V5

BZT52B8V2

BZT52B9V1

BZT52B10

BZT52B11

BZT52B12

BZT52B13

BZT52B15

BZT52B16

BZT52B18

BZT52B20

BZT52B22

BZT52B24

BZT52B27

BZT52B30

BZT52B33

BZT52B36

BZT52B39

BZT52B43

BZT52B47

BZT52B51

BZT52B56

- 8 to - 3

- 7 to - 3

- 6 to - 1

- 5 to + 2

- 3 to + 4

- 2 to + 6

> 0.8

> 1

> 2

> 3

> 5

> 6

> 7

> 7.5

> 8.5

> 9

> 10

> 11

> 12

> 14

> 15

> 17

> 18

> 20

> 22.5

> 25

> 27

> 29

> 32

> 35

> 38

5.49

6.08

6.66

7.35

8.04

8.92

9.8

5.71

6.32

6.94

7.65

8.36

9.28

10.2

11.2

12.2

13.3

15.3

16.3

18.4

20.4

22.4

24.5

27.5

30.6

33.7

36.7

39.8

43.9

47.9

- 1 to + 7

+ 2 to + 7

+ 3 to + 7

+ 4 to + 7

+ 5 to + 8

+ 5 to + 9

+ 6 to + 9

+ 7 to + 9

+ 8 to + 9.5

+ 8 to + 10

+ 10 to + 12

4.5 (< 7)

4.8 (< 10)

5.2 (< 15)

6 (< 20)

< 50

< 70

10.8

11.8

12.7

14.7

15.7

17.6

19.6

21.6

23.5

26.5

29.4

32.3

35.3

38.2

42.1

46.1

< 70

7 (< 20)

< 90

9 (< 25)

< 110

< 170

< 220

< 250

< 300

< 700

< 750

11 (< 30)

13 (< 40)

18 (< 50)

20 (< 50)

25 (< 55)

28 (< 80)

30 (< 80)

35 (< 80)

40 (< 80)

40 (< 90)

50 (< 90)

60 (< 100)

70 (< 100)

(2)

(3)

(2)

54.9

57.1

< 135

< 1000

< 1500

typ. + 10

(2)

BZT52B62

BZT52B68

BZT52B75

60.8

66.6

73.5

63.2

69.4

76.5

2.5

< 150

typ. + 10

(2)

< 200

typ. + 10

(2)

< 250

typ. + 10

= 5 mA, I

= 1 mA

ZT2

ZT1

Measured with pulses T = 5 ms

= I

= 2.5 mA

= 0.5 mA

ZT1

ZT2

Valid provided that electrodes are kept at ambient temperature.

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

BZT52-Series

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

18117

18114

Figure 1. Forward characteristics

Figure 4. Dynamic Resistance vs. Zener Current

18888

18118

Figure 2. Admissible Power Dissipation vs. Ambient Temperature

Figure 5. Capacitance vs. Zener Voltage

°C

18119

18116

Figure 3. Pulse Thermal Resistance vs. Pulse Duration

Figure 6. Dynamic Resistance vs. Zener Current

www.vishay.com

Document Number 85760

Rev. 1.5, 13-Sep-04

BZT52-Series

Vishay Semiconductors

°C

18135

18120

Figure 7. Dynamic Resistance vs. Zener Current

Figure 10. Temperature Dependence of Zener Voltage vs. Zener

Voltage

°C/W

18124

18121

Figure 8. Thermal Differential Resistance vs. Zener Voltage

Figure 11. Change of Zener Voltage vs. Junction Temperature

°C

18122

18136

Figure 9. Dynamic Resistance vs. Zener Voltage

Figure 12. Temperature Dependence of Zener Voltage vs. Zener

Voltage

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

BZT52-Series

Vishay Semiconductors

18158

Figure 13. Change of Zener Voltage vs. Junction Temperature

18159

Figure 14. Change of Zener voltage from turn-on up to the point of

thermal equilibrium vs. Zener voltage

18160

Figure 15. Change of Zener voltage from turn-on up to the point of

thermal equilibrium vs. Zener voltage

www.vishay.com

Document Number 85760

Rev. 1.5, 13-Sep-04

BZT52-Series

Vishay Semiconductors

18111

Figure 16. Breakdown Characteristics

18112

Figure 17. Breakdown Characteristics

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

BZT52-Series

Vishay Semiconductors

18157

Figure 18. Breakdown Characteristics

Package Dimensions in mm (Inches)

1.35 (0.053) max.

0.25 (0.010) min.

0.15 (0.006) max.

ISO Method E

0.1 (0.004) max.

0.55 (0.022)

Mounting Pad Layout

Cathode Band

1.40 (0.055)

0.72 (0.028)

1.70 (0.067)

1.40 (0.055)

17432

www.vishay.com

Document Number 85760

Rev. 1.5, 13-Sep-04

BZT52-Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

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