概述
规格参数
数据手册MMSZ5242B-G3-08 概述
DIODE ZENER 12V 500MW SOD123 齐纳二极管
MMSZ5242B-G3-08 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Active | 包装说明： | R-PDSO-G2 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.50 | Factory Lead Time： | 10 weeks |
| 风险等级： | 0.87 | Samacsys Description： | Vishay MMSZ5242B-G3-08 Zener Diode, 12V 5% 0.5 W SMT 2-Pin SOD-123 |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | ZENER DIODE | JESD-30 代码： | R-PDSO-G2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 元件数量： | 1 | 端子数量： | 2 |
| 最高工作温度： | 150 °C | 最低工作温度： | -55 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 极性： | UNIDIRECTIONAL | 最大功率耗散： | 0.5 W |
| 参考标准： | AEC-Q101 | 标称参考电压： | 12 V |
| 表面贴装： | YES | 技术： | ZENER |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 10 |
| 最大电压容差： | 5% | 工作测试电流： | 20 mA |
MMSZ5242B-G3-08 数据手册
通过下载MMSZ5242B-G3-08数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• Standard Zener voltage tolerance is 5 % with
a “B” suffix (e.g.: MMSZ5225B-G), suffix “C” is
2 % tolerance
• AEC-Q101 qualified available
(part number on request)
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
click logo to get started
DESIGN SUPPORT TOOLS
• Base P/N-G3 - green, commercial grade
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Models
Available
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
V
VZ range nom.
3 to 75
Test current IZT
VZ specification
Circuit configuration
1.7 to 20
mA
Thermal equilibrium
Single
ORDERING INFORMATION
MINIMUM ORDER
TAPED UNITS PER REEL
DEVICE NAME
ORDERING CODE
QUANTITY
MMSZ5225B-G3-08 to MMSZ5267B-G3-08
MMSZ5225C-G3-08 to MMSZ5267C-G3-08
MMSZ5225B-G3-18 to MMSZ5267B-G3-18
MMSZ5225C-G3-18 to MMSZ5267C-G3-18
3000 (8 mm tape on 7" reel)
10 000 (8 mm tape on 13" reel)
15 000/box
10 000/box
MMSZ5225-G to
MMBZ5267-G
PACKAGE
MOLDING COMPOUND
WEIGHT
MOISTURE SENSITIVITY
LEVEL
PACKAGE NAME
SOLDERING CONDITIONS
FLAMMABILITY RATING
MSL level 1
(according J-STD-020)
SOD-123
10.3 mg
UL 94 V-0
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
On FR - 4 or FR - 5 board with minimum
recommended solder pad layout
Power dissipation
Ptot
500
mW
Zener current
See table “Electrical Characteristics”
On FR - 4 or FR - 5 board with minimum
recommended solder pad layout
Thermal resistance junction to ambient air
RthJA
340
K/W
Junction temperature, maximum
Storage temperature range
Operating temperature range
Tj
150
°C
°C
°C
Tstg
Top
-65 to +175
-55 to +150
Rev. 1.3, 20-Feb-18
Document Number: 83387
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
REVERSE
LAEKAGE
CURRENT
ZENER VOLTAGE
RANGE (1)
MARKING
CODE
TEST
CURRENT
DYNAMIC
TEMPERATURE
COEFFICIENT
RESISTANCE (2)
PART NUMBER
± ± ±% ± ±ꢀ±%
VZ at IZT1
V
IZT1
IZT2
IR at VR
ZZ at IZT1 ZZK at IZT2
VZ
mA
μA
MAX.
50
25
15
10
5
V
%/°C
TYP.
NOM.
3
MAX.
30
28
24
23
22
19
17
11
7
MAX.
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
MMSZ5225-G
MMSZ5226-G
MMSZ5227-G
MMSZ5228-G
MMSZ5229-G
MMSZ5230-G
MMSZ5231-G
MMSZ5232-G
MMSZ5233-G
MMSZ5234-G
MMSZ5235-G
MMSZ5236-G
MMSZ5237-G
MMSZ5238-G
MMSZ5239-G
MMSZ5240-G
MMSZ5241-G
MMSZ5242-G
MMSZ5243-G
MMSZ5244-G
MMSZ5245-G
MMSZ5246-G
MMSZ5247-G
MMSZ5248-G
MMSZ5249-G
MMSZ5250-G
MMSZ5251-G
MMSZ5252-G
MMSZ5253-G
MMSZ5254-G
MMSZ5255-G
MMSZ5256-G
MMSZ5257-G
MMSZ5258-G
MMSZ5259-G
MMSZ5260-G
MMSZ5261-G
MMSZ5262-G
MMSZ5263-G
MMSZ5264-G
MMSZ5265-G
MMSZ5266-G
MMSZ5267-G
C.0
D.6
D.7
D.8
D.9
D.0
E.6
E.7
E.8
E.9
E.0
F.6
F.7
F.8
F.9
F.0
H.6
H.7
H.8
H.9
H.0
J.6
C0
D6
D7
D8
D9
D0
E6
E7
E8
E9
E0
F6
F7
F8
F9
F0
H6
H7
H8
H9
H0
J6
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
-0.075
-0.07
-0.065
-0.06
-0.055
0.030
0.030
0.038
0.038
0.045
0.05
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
1
1
1
5
2
5
2
5
3
5
3.5
4
6.2
6.8
7.5
8.2
8.7
9.1
10
5
7
3
5
5
3
6
6
500
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.087
0.089
0.09
3
6.5
6.5
7
8
500
3
8
600
3
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
600
3
8
600
11
2
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
600
12
1
600
13
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
600
14
600
15
8.5
7.8
7.4
7
600
16
600
J.7
J7
17
600
J.8
J8
18
600
J.9
J9
19
6.6
6.2
5.6
5.2
5
600
J.0
J0
20
600
K.6
K.7
K.8
K.9
K.0
M.6
M.7
M.8
M.9
M.0
N.6
N.7
N.8
N.9
N.0
P.6
P.7
K6
K7
K8
K9
K0
M6
M7
M8
M9
M0
N6
N7
N8
N9
N0
P6
P7
22
600
24
600
25
600
27
4.6
4.5
4.2
3.8
3.4
3.2
3
600
28
600
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
30
600
33
700
36
700
39
800
43
900
47
2.7
2.5
2.2
2.1
2
1000
1100
1300
1400
1400
1600
1700
51
56
60
62
68
1.8
1.7
75
Notes
•
Maximum VF = 0.9 V, at IF = 10 mA
Measured with device junction in thermal equilibrium
The Zener impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the
Zener current (IZT1 or IZT2) is superimposed on IZT1 or IZT2. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units
(1)
(2)
Rev. 1.3, 20-Feb-18
Document Number: 83387
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
Axis Title
Axis Title
50
45
40
35
30
25
20
15
10
5
10000
1000
100
10
9
8
7
6
5
4
3
2
1
0
10000
1000
100
MMSZ5262
MMSZ5263
MMSZ5264
MMSZ5265
MMSZ5266
MMSZ5267
MMSZ5240
MMSZ5241
MMSZ5242
MMSZ5243
MMSZ5244
MMSZ5245
MMSZ5246
0
10
10
0
0
0
20
40
60
80
100
0
0
0
5
10
15
20
10
6
VZ (V)
2nd line
VZ (V)
2nd line
Fig. 1 - Breakdown Characteristics
Fig. 4 - Breakdown Characteristics
Axis Title
Axis Title
100
90
80
70
60
50
40
30
20
10
0
10000
1000
100
20
18
16
14
12
10
8
10000
1000
100
MMSZ5231
MMSZ5232
MMSZ5233
MMSZ5234
MMSZ5235
MMSZ5236
MMSZ5237
MMSZ5238
MMSZ5239
MMSZ5253
MMSZ5254
MMSZ5255
MMSZ5256
MMSZ5257
MMSZ5258
MMSZ5259
MMSZ5260
MMSZ5261
6
4
2
10
0
10
20
40
60
2
4
6
8
VZ (V)
2nd line
VZ (V)
2nd line
Fig. 2 - Breakdown Characteristics
Fig. 5 - Breakdown Characteristics
Axis Title
Axis Title
200
180
160
140
120
100
80
10000
1000
100
30
25
20
15
10
5
10000
1000
100
MMSZ5225
MMSZ5226
MMSZ5227
MMSZ5228
MMSZ5229
MMSZ5230
MMSZ5247
MMSZ5248
MMSZ5249
MMSZ5250
MMSZ5251
MMSZ5252
60
40
20
0
10
0
10
5
10
15
20
25
30
1
2
3
4
5
VZ (V)
2nd line
VZ (V)
2nd line
Fig. 3 - Breakdown Characteristics
Fig. 6 - Breakdown Characteristics
Rev. 1.3, 20-Feb-18
Document Number: 83387
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MMSZ5225-G to MMSZ5267-G
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Cathode bar
Mounting Pad Layout
2.85 (0.112)
2.55 (0.100)
0.85 (0.033)
0.85 (0.033)
3.85 (0.152)
3.55 (0.140)
2.5 (0.098)
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
Rev. 1.3, 20-Feb-18
Document Number: 83387
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 09-Jul-2021
Document Number: 91000
1
MMSZ5242B-G3-08 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MMSZ5242B-G3-18 | VISHAY | DIODE ZENER 12V 500MW SOD123 | 获取价格 |
|
| MMSZ5242B-GS18 | VISHAY | Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, LEAD FREE, PLASTIC PACKAGE-2 | 获取价格 |
|
| MMSZ5242B-H | FORMOSA | Status : Active; Package : SOD-123F; PD(W) : 0.5; VZ Min.(V) : 11.4; VZ Nom.(V) : 12; VZ Max.(V) : 12.6; IZ(mA) : 20; AEC-Q101Qualified : No; | 获取价格 |
|
| MMSZ5242B-HE3-08 | VISHAY | Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 |
|
| MMSZ5242B-Q1-H | FORMOSA | Status : Active; Package : SOD-123F; PD(W) : 0.5; VZ Min.(V) : 11.4; VZ Nom.(V) : 12; VZ Max.(V) : 12.6; IZ(mA) : 20; AEC-Q101Qualified : Yes; | 获取价格 |
|
| MMSZ5242B-T1 | WTE | 500mW SURFACE MOUNT ZENER DIODE | 获取价格 |
|
| MMSZ5242B-T1 | SENSITRON | Zener Diode, 12V V(Z), 5%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2 | 获取价格 |
|
| MMSZ5242B-T3 | WTE | Zener Diode, 12V V(Z), 5%, 0.5W, | 获取价格 |
|
| MMSZ5242B-TP | MCC | 500 mW Zener Diodes 2.4 to 39 Volts | 获取价格 |
|
| MMSZ5242B-V-G-08 | VISHAY | DIODE 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-2, Voltage Regulator Diode | 获取价格 |
|
MMSZ5242B-G3-08 相关文章
MOSFET：原理、类型与应用电路揭秘
- 2025-04-30
- 14
硅芯科技重磅发布三维堆叠芯片系统建模工具 3Sheng_Zenith
- 2025-04-30
- 12
神经元全链可控发力，KD6610 系列车规通信芯片闪耀登场
- 2025-04-30
- 10
聚焦 2025 IMW，下一代存储关键技术即将震撼亮相
- 2025-04-30
- 12
