概述
规格参数
数据手册
替代型号S1K-E3/61T 概述
Diode Switching 800V 1A 2-Pin SMA T/R 信号二极管
S1K-E3/61T 规格参数
| 是否无铅： | 不含铅 | 生命周期： | Active |
| 零件包装代码： | DO-214AC | 包装说明： | R-PDSO-C2 |
| 针数： | 2 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 1.44 | 其他特性： | LOW LEAKAGE CURRENT |
| 配置： | SINGLE | 二极管元件材料： | SILICON |
| 二极管类型： | RECTIFIER DIODE | 最大正向电压 (VF)： | 1.1 V |
| JEDEC-95代码： | DO-214AC | JESD-30 代码： | R-PDSO-C2 |
| JESD-609代码： | e3 | 湿度敏感等级： | 1 |
| 最大非重复峰值正向电流： | 30 A | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 最低工作温度： | -55 °C | 最大输出电流： | 1 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 260 |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 800 V |
| 最大反向恢复时间： | 1.8 µs | 子类别： | Rectifier Diodes |
| 表面贴装： | YES | 端子面层： | Matte Tin (Sn) |
| 端子形式： | C BEND | 端子位置： | DUAL |
| 处于峰值回流温度下的最长时间： | 30 | Base Number Matches： | 1 |
S1K-E3/61T 数据手册
通过下载S1K-E3/61T数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
Available
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.0 A
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
40 A, 30 A
5 mJ
MECHANICAL DATA
EAS
IR
1.0 μA, 5.0 μA
1.1 V
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
VF
TJ max.
Package
Diode variations
150 °C
SMA (DO-214AC)
Single
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M UNIT
Device marking code
SA
SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5
mJ
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 21-Jul-17
Document Number: 88711
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1
V
TA = 25 °C
1.0
5.0
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
TA = 125 °C
50
1.8
12
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
μs
4.0 V, 1 MHz
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
75
S1G
S1J
S1K
S1M
UNIT
RθJA
85
30
Typical thermal resistance (1)
°C/W
RθJL
27
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
S1J-E3/61T
0.064
61T
5AT
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S1J-E3/5AT
0.064
7500
S1JHE3_A/H (1)
S1JHE3_A/I (1)
S1J-M3/61T
0.064
1800
0.064
I
7500
0.064
61T
5AT
H
1800
S1J-M3/5AT
0.064
7500
S1JHM3_A/H (1)
S1JHM3_A/I (1)
0.064
1800
0.064
I
7500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
0
TL = 110 °C
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
S1A thru S1J
S1A thru S1J
S1K, S1M
S1K, S1M
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
1
10
100
0
20
40
60
80
100
120 140
160
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 21-Jul-17
Document Number: 88711
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Pulse Width = 300 μs 1% Duty Cycle
1
10
TJ = 25 °C
TJ = -40 °C
0.1
0.01
1
0.01
0.4
0.8
1.2
1.6
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10
1000
TJ = 125 °C
1
S1K, S1M
100
10
TJ = 75 °C
0.1
S1A thru S1J
0.01
Units Mounted on
TJ = 25 °C
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
1
0.01
0.001
0.1
1
10
100
0
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Jul-17
Document Number: 88711
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
S1K-E3/61T 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| STTH108A | STMICROELECTRONICS | HIGH VOLTAGE ULTRAFAST RECTIFIER | 功能相似 |
|
| MRA4006T3G | ONSEMI | Surface Mount Standard Recovery Power Rectifier | 功能相似 |
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| S1K-13-F | DIODES | 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER | 功能相似 |
|
S1K-E3/61T 相关器件
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| S1K-N | ANBON | SOD-323 | 获取价格 |
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