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SI7446DP-T1

更新时间：2025-01-16 15:08:26
品牌：VISHAY
描述：Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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SI7446DP-T1 概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 功率场效应晶体管

SI7446DP-T1 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：compliant
风险等级：5.75配置：Single
最大漏极电流 (Abs) (ID)：12 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e0最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：5.2 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

SI7446DP-T1 数据手册

通过下载SI7446DP-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7446DP  
Vishay Siliconix  
N-Channel 30-V (D-S) Fast Switching MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D High-Efficiency PWM Optimized  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.0075 @ V = 10 V  
19  
17  
GS  
30  
0.010 @ V = 4.5 V  
GS  
D
D
D D  
PowerPAKr SO-8  
S
6.15 mm  
5.15 mm  
1
S
2
S
3
G
4
G
D
8
D
7
N-Channel MOSFET  
D
6
D
5
Bottom View  
Ordering Information: Si7446DP-T1  
S
S S  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
19  
15  
12  
9
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
50  
DM  
a
Continuous Source Current (Diode Conduction)  
I
4.3  
5.2  
3.3  
1.6  
1.9  
1.2  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
19  
52  
24  
65  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.5  
1.8  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71335  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
1
 
Si7446DP  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
"100  
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
1
5
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 55_C  
DS  
GS  
J
NO TAG  
On-State Drain Current  
I
40  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0062  
0.0075  
0.010  
V
= 10 V, I = 19 A  
D
GS  
NO TAG  
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 17 A  
0.0083  
60  
GS  
DS  
D
NO TAG  
Forward Transconductance  
g
fs  
V
= 15 V, I = 19 A  
S
V
D
NO TAG  
Diode Forward Voltage  
V
I
S
= 4.3 A, V = 0 V  
0.75  
1.2  
45  
SD  
GS  
DynamicNO TAG  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
36  
14  
Q
gs  
Q
gd  
V
= 15 V, V = 5.0 V, I = 19 A  
nC  
DS  
GS  
D
12  
R
g
0.5  
2.4  
20  
3.1  
30  
W
t
d(on)  
t
r
16  
25  
V
= 15 V, R = 15 W  
L
DD  
I
D
^ 1 A, V = 10 V, R = 6 W  
GEN G  
Turn-Off Delay Time  
Fall Time  
t
120  
43  
180  
65  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 2.3 A, di/dt = 100 A/ms  
50  
80  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
40  
30  
20  
10  
0
T
C
= 125_C  
25_C  
3 V  
2 V  
-55_C  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
V - Gate-to-Source Voltage (V)  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
- Drain-to-Source Voltage (V)  
DS  
Document Number: 71335  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
2
Si7446DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.020  
6000  
5000  
4000  
3000  
2000  
1000  
0
0.016  
0.012  
C
iss  
V
= 4.5 V  
GS  
0.008  
0.004  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
10  
20  
30  
40  
50  
0
5
10  
15  
20  
25  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
V
= 15 V  
V
= 10 V  
GS  
DS  
1.6  
1.2  
0.8  
0.4  
I
D
= 19  
A
I = 19 A  
D
6
4
2
0
0
14  
28  
42  
56  
70  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
g
- Total Gate Charge (nC)  
T
J
- Junction Temperature (_C)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
50  
I
D
= 19 A  
T = 150_C  
J
10  
T = 25_C  
J
1
0.0  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71335  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
3
Si7446DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-to-Ambient  
0.6  
100  
80  
0.4  
0.2  
I
D
= 250 mA  
-0.0  
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 68_C/W  
thJA  
(t)  
Z
3. T  
- T = P  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
Square Wave Pulse Duration (sec)  
Document Number: 71335  
S-31728—Rev. B, 18-Aug-03  
www.vishay.com  
4
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
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