SI7840DP 概述
N-Channel 30-V (D-S) Fast Switching MOSFET N通道30 -V (D -S )快速开关MOSFET 功率场效应晶体管
SI7840DP 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 11 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.9 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
SI7840DP 数据手册
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PDF下载Si7840DP
Vishay Siliconix
New Product
N-Channel 30-V (D-S) Fast Switching MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
0.0095 @ V = 10 V
GS
18
15
30
0.014 @ V = 4.5 V
GS
APPLICATIONS
D DC/DC Converters
D Optimized for “High-Side” Synchronous
Rectifier Operation
PowerPAKt SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
S
6
D
5
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
18
14
11
8
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
Pulsed Drain Current
I
40
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
4.1
1.6
S
I
AS
40
80
L = 0.1 mH
Avalanche Energy
E
mJ
AS
T
= 25_C
= 70_C
5.0
3.2
1.9
1.2
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
J
–55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
20
52
25
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
2.1
2.6
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71624
S-05804—Rev. C, 25-Feb-02
www.vishay.com
1
Si7840DP
New Product
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
"100
nA
DS
GSS
V
= 24 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 55_C
DS
GS
J
a
On-State Drain Current
I
30
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0077
0.0095
0.014
V
= 10 V, I = 18 A
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 15 A
0.0115
40
GS
DS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 18 A
S
V
D
a
Diode Forward Voltage
V
I
S
= 4.1 A, V = 0 V
0.75
1.2
23
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
15.5
3.8
6
Q
gs
Q
gd
V
= 15 V, V = 5.0 V, I = 18 A
nC
DS
GS
D
R
G
0.8
17
14
39
19
50
W
t
t
26
21
60
30
80
d(on)
t
r
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 4.1 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
= 10 thru 4 V
GS
32
24
16
8
3 V
T
C
= 125_C
25_C
–55_C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
– Drain-to-Source Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
DS
Document Number: 71624
S-05804—Rev. C, 25-Feb-02
www.vishay.com
2
Si7840DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.020
2500
2000
1500
1000
500
0.016
C
iss
V
= 4.5 V
GS
0.012
0.008
0.004
0.000
V
= 10 V
GS
C
oss
C
rss
0
0
8
16
24
32
40
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
V
= 10 V
GS
DS
I
D
= 18
A
I = 18 A
D
6
4
2
0
0
6
12
18
24
30
–50 –25
0
25
50
75
100 125 150
Q
g
– Total Gate Charge (nC)
T – Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
40
I
D
= 18 A
T
J
= 150_C
10
T
J
= 25_C
1
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
– Source-to-Drain Voltage (V)
V
– Gate-to-Source Voltage (V)
GS
SD
Document Number: 71624
S-05804—Rev. C, 25-Feb-02
www.vishay.com
3
Si7840DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4
200
160
120
I
D
= 250 mA
0.2
–0.0
–0.2
–0.4
–0.6
–0.8
–1.0
80
40
0
–50 –25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
– Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 68_C/W
thJA
(t)
Z
3. T – T = P
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71624
S-05804—Rev. C, 25-Feb-02
www.vishay.com
4
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