SI7846DP 概述
N-Channel 150-V (D-S) MOSFET N沟道150 -V (D -S )的MOSFET MOS管 功率场效应晶体管
SI7846DP 规格参数
是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | SO-8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
配置: | Single | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 6.7 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.05 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XDSO-N8 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 5.2 W |
最大脉冲漏极电流 (IDM): | 50 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | NO LEAD | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 33 ns | 最大开启时间(吨): | 18 ns |
Base Number Matches: | 1 |
SI7846DP 数据手册
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PDF下载Si7846DP
Vishay Siliconix
N-Channel 150-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
150
0.050 @ V = 10 V
GS
6.7
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
PowerPAK SO-8
D
S
6.15 mm
5.15 mm
1
S
2
S
3
G
4
G
D
8
D
7
D
6
D
5
S
N-Channel MOSFET
Bottom View
Ordering Information: Si7846DP-T1
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
150
DS
V
V
GS
"20
T
= 25_C
= 70_C
6.7
5.4
4.0
3.3
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
Pulsed Drain Current
I
50
25
A
DM
Avalanch Current
L = 0.1 mH
I
AS
a
Continuous Source Current (Diode Conduction)
I
4.3
5.2
3.3
1.6
1.9
1.2
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
19
52
24
65
a
Maximum Junction-to-Ambient
R
thJA
R
thJF
_C/W
Maximum Junction-to-Foot (Drain)
1.5
1.8
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
1
Si7846DP
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
nA
GSS
V
= 120 V, V = 0 V
1
5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 120 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
50
A
V
DS
w 5 V, V = 10 V
D(on)
GS
a
Drain-Source On-State Resistance
r
0.041
0.050
1.1
W
V
V
= 10 V, I = 5 A
DS(on)
GS
D
a
Forward Transconductance
g
fs
= 15 V, I = 5 A
18
S
V
DS
D
a
Diode Forward Voltage
V
SD
I
S
= 2.8 A, V = 0 V
0.75
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
30
8.5
8.5
0.85
12
36
g
Q
Q
V
= 75 V, V = 10 V, I = 5 A
nC
gs
gd
DS
GS
D
R
g
0.2
1.4
18
11
W
t
d(on)
t
r
7
V
= 75 V, R = 15 W
L
GEN G
DD
I
D
^ 5 A, V
= 10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
22
33
15
70
ns
d(off)
t
f
10
Source-Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
t
rr
I
= 2.8 A, di/dt = 100 A/ms
40
F
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 7 V
6 V
40
30
20
10
0
T
= 125_C
C
25_C
5 V
-55_C
3, 4 V
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
2
Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.10
0.08
0.06
C
iss
V
GS
= 10 V
0.04
0.02
0.00
C
rss
C
oss
0
0
10
20
30
40
50
0
30
60
90
120
150
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
20
16
12
8
2.5
2.0
1.5
1.0
0.5
0.0
V
D
= 75 V
V
= 10 V
DS
GS
I
= 5 A
I = 5 A
D
4
0
0
15
Q
30
45
60
-50
-25
0
25
50
75
100 125 150
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
0.09
0.06
0.03
0.00
50
10
I
D
= 5 A
T
= 150_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
3
Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
AvalancheCurrent vs. Time
1.0
100
10
0.5
I
D
= 250 mA
T = 25_C
0.0
-0.5
-1.0
-1.5
T = 125_C
1
0.1
10
-5
-4
-3
-2
-1
-50
-25
0
25
50
75
100 125 150
10
10
10
10
1
T
- Temperature (_C)
Time (sec)
J
Single Pulse Power, Juncion-to-Ambient
100
80
60
40
20
0
0.1
0.001
0.01
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 52_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
4
Si7846DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Document Number: 71442
S-31728—Rev. B, 18-Aug-03
www.vishay.com
5
SI7846DP 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
SI7846DP-T1-E3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 功能相似 |
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SI7846DP-T1-GE3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 功能相似 |
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SI7846DP 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
SI7846DP-E3 | VISHAY | TRANSISTOR 4 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERPAK, SO-8, FET General Purpose Power | 获取价格 |
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SI7846DP-T1 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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SI7846DP-T1-E3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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SI7846DP-T1-GE3 | VISHAY | N-Channel 150-V (D-S) MOSFET | 获取价格 |
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SI7848BDP | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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SI7848BDP-T1-E3 | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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SI7848DP | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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SI7848DP-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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SI7848DP-T1 | VISHAY | N-Channel 40-V (D-S) MOSFET | 获取价格 |
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SI7848DP-T1-E3 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
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