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SI7860DP

更新时间：2025-07-01 01:41:17
品牌：VISHAY
描述：N-Channel Reduced Qg, Fast Switching MOSFET

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SI7860DP 概述

N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少的Qg ，快速开关MOSFET

SI7860DP 数据手册

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Si7860DP  
Vishay Siliconix  
N-Channel Reduced Qg, Fast Switching MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
D PWM Optimized for High Efficiency  
D New Low Thermal Resistance PowerPAKr  
Package with Low 1.07-mm Profile  
D 100% Rg Tested  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.008 @ V = 10 V  
18  
15  
GS  
30  
0.011 @ V = 4.5 V  
GS  
APPLICATIONS  
D Buck Converter  
- High Side or Low Side  
D Synchronous Rectifier  
- Secondary Rectifier  
PowerPAK SO-8  
S
6.15 mm  
5.15 mm  
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
S
Bottom View  
Ordering Information: Si7860DP-T1  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
18  
15  
11  
8
A
a
Continuous Drain Current (T = 150__C)  
I
D
J
T
A
Pulsed Drain Current  
I
"50  
A
DM  
a
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
4.1  
1.5  
S
I
AS  
30  
45  
L= 0.1 mH  
Single Pulse Avalanche Energy  
E
mJ  
AS  
T
= 25_C  
= 70_C  
5
1.8  
1.1  
A
a
Maximum Power Dissipation  
P
W
D
T
A
3.2  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
20  
56  
25  
70  
a
Maximum Junction-to-Ambient (MOSFET)  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
1.8  
2.3  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71854  
S-32040—Rev. C, 13-Oct-03  
www.vishay.com  
1
 
Si7860DP  
Vishay Siliconix  
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
1.0  
3.0  
"100  
1
V
GS(th)  
DS  
GS D  
V
= 0 V, V = "20 V  
GS  
I
nA  
DS  
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
= 24 V, V = 0 V, T = 70_C  
5
DS  
GS  
J
a
On-State Drain Current  
I
40  
A
V
w 5 V, V = 10 V  
GS  
D(on)  
DS  
0.0066  
0.008  
0.011  
V
= 10 V, I = 18  
D
GS  
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 4.5 V, I = 15  
0.0090  
60  
GS  
D
a
Forward Transconductance  
g
fs  
V
= 15 V, I = 18  
S
V
DS  
D
a
Diode Forward Voltage  
V
I
S
= 3 A, V = 0 V  
0.70  
1.1  
18  
SD  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate-Resistance  
Turn-On Delay Time  
Rise Time  
Q
g
13  
5
Q
gs  
Q
gd  
V
= 15 V, V = 4.5 V, I = 18 A  
nC  
DS  
GS  
D
4.0  
1.7  
18  
12  
46  
19  
40  
R
g
0.5  
3.2  
27  
18  
70  
30  
70  
W
t
d(on)  
t
r
V
= 15 V, R = 15 W  
L
DD  
I
^ 1 A, V  
= 10 V, R = 6 W  
D
GEN G  
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 3 A, di/dt = 100 A/ms  
F
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
50  
50  
40  
30  
20  
10  
0
V
= 10 thru 4 V  
GS  
40  
30  
20  
10  
0
T
C
= 125_C  
3 V  
25_C  
-55_C  
0
2
4
6
8
10  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
- Drain-to-Source Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
DS  
Document Number: 71854  
S-32040—Rev. C, 13-Oct-03  
www.vishay.com  
2
Si7860DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
0.015  
2500  
2000  
1500  
1000  
500  
0.012  
C
iss  
V
= 4.5 V  
GS  
0.009  
0.006  
0.003  
0.000  
V
= 10 V  
GS  
C
oss  
C
rss  
0
0
10  
20  
30  
40  
50  
0
6
12  
18  
24  
30  
I
D
- Drain Current (A)  
V
DS  
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
6
5
4
3
2
1
0
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
V
D
= 15 V  
V
= 10 V  
GS  
DS  
I
= 16 A  
I = 16 A  
D
0
4
8
12  
16  
20  
-50  
-25  
0
J
25  
50  
75  
100 125 150  
T
- Junction Temperature (_C)  
Q
- Total Gate Charge (nC)  
g
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.040  
0.032  
0.024  
0.016  
0.008  
0.000  
60  
T = 150_C  
J
10  
T = 25_C  
J
I
D
= 16 A  
1
0.00  
0
2
4
6
8
10  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
- Source-to-Drain Voltage (V)  
V
- Gate-to-Source Voltage (V)  
GS  
SD  
Document Number: 71854  
S-32040—Rev. C, 13-Oct-03  
www.vishay.com  
3
Si7860DP  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Juncion-To-Ambient  
0.6  
200  
160  
120  
I
D
= 250 mA  
0.3  
0.0  
-0.3  
-0.6  
-0.9  
80  
40  
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0.001  
0.01  
0.1  
1
10  
T
J
- Temperature (_C)  
Time (sec)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 125_C/W  
thJA  
(t)  
3. T  
- T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 71854  
S-32040—Rev. C, 13-Oct-03  
www.vishay.com  
4

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