SI7860DP 概述
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少的Qg ,快速开关MOSFET
SI7860DP 数据手册
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Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for High Efficiency
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.008 @ V = 10 V
18
15
GS
30
0.011 @ V = 4.5 V
GS
APPLICATIONS
D Buck Converter
- High Side or Low Side
D Synchronous Rectifier
- Secondary Rectifier
PowerPAK SO-8
S
6.15 mm
5.15 mm
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
S
Bottom View
Ordering Information: Si7860DP-T1
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
DS
GS
V
V
"20
T
= 25_C
= 70_C
18
15
11
8
A
a
Continuous Drain Current (T = 150__C)
I
D
J
T
A
Pulsed Drain Current
I
"50
A
DM
a
Continuous Source Current (Diode Conduction)
Avalanche Current
I
4.1
1.5
S
I
AS
30
45
L= 0.1 mH
Single Pulse Avalanche Energy
E
mJ
AS
T
= 25_C
= 70_C
5
1.8
1.1
A
a
Maximum Power Dissipation
P
W
D
T
A
3.2
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
20
56
25
70
a
Maximum Junction-to-Ambient (MOSFET)
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
1.8
2.3
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71854
S-32040—Rev. C, 13-Oct-03
www.vishay.com
1
Si7860DP
Vishay Siliconix
MOSFET SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1.0
3.0
"100
1
V
GS(th)
DS
GS D
V
= 0 V, V = "20 V
GS
I
nA
DS
GSS
V
= 24 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 24 V, V = 0 V, T = 70_C
5
DS
GS
J
a
On-State Drain Current
I
40
A
V
w 5 V, V = 10 V
GS
D(on)
DS
0.0066
0.008
0.011
V
= 10 V, I = 18
D
GS
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 4.5 V, I = 15
0.0090
60
GS
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 18
S
V
DS
D
a
Diode Forward Voltage
V
I
S
= 3 A, V = 0 V
0.70
1.1
18
SD
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Q
g
13
5
Q
gs
Q
gd
V
= 15 V, V = 4.5 V, I = 18 A
nC
DS
GS
D
4.0
1.7
18
12
46
19
40
R
g
0.5
3.2
27
18
70
30
70
W
t
d(on)
t
r
V
= 15 V, R = 15 W
L
DD
I
^ 1 A, V
= 10 V, R = 6 W
D
GEN G
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 3 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
= 10 thru 4 V
GS
40
30
20
10
0
T
C
= 125_C
3 V
25_C
-55_C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
DS
Document Number: 71854
S-32040—Rev. C, 13-Oct-03
www.vishay.com
2
Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.015
2500
2000
1500
1000
500
0.012
C
iss
V
= 4.5 V
GS
0.009
0.006
0.003
0.000
V
= 10 V
GS
C
oss
C
rss
0
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
6
5
4
3
2
1
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
V
D
= 15 V
V
= 10 V
GS
DS
I
= 16 A
I = 16 A
D
0
4
8
12
16
20
-50
-25
0
J
25
50
75
100 125 150
T
- Junction Temperature (_C)
Q
- Total Gate Charge (nC)
g
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.040
0.032
0.024
0.016
0.008
0.000
60
T = 150_C
J
10
T = 25_C
J
I
D
= 16 A
1
0.00
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
SD
Document Number: 71854
S-32040—Rev. C, 13-Oct-03
www.vishay.com
3
Si7860DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.6
200
160
120
I
D
= 250 mA
0.3
0.0
-0.3
-0.6
-0.9
80
40
0
-50
-25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
J
- Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 125_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 71854
S-32040—Rev. C, 13-Oct-03
www.vishay.com
4
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