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SI7991DP-T1

更新时间：2025-07-03 01:40:17
品牌：VISHAY
描述：Dual P-Channel 30-V (D-S) MOSFET

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SI7991DP-T1 概述

Dual P-Channel 30-V (D-S) MOSFET 双P通道30 - V（D -S）的MOSFET 功率场效应晶体管

SI7991DP-T1 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOT
包装说明：SMALL OUTLINE, R-XDSO-C6针数：8
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.92外壳连接：DRAIN
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：6.6 A最大漏极电流 (ID)：6.6 A
最大漏源导通电阻：0.023 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XDSO-C6JESD-609代码：e0
元件数量：2端子数量：6
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：3.5 W
最大脉冲漏极电流 (IDM)：30 A认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SI7991DP-T1 数据手册

通过下载SI7991DP-T1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Si7991DP  
Vishay Siliconix  
New Product  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
D New Low Thermal Resistance PowerPAKr Package  
with Low 1.07-mm Profile  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.023 @ V = −10 V  
−10.2  
−8.1  
GS  
APPLICATIONS  
−30  
0.035 @ V = −4.5  
V
GS  
D Load Switch  
− Notebook PCs  
− Desktop PCs  
− Game Stations  
D Battery Switch  
PowerPAK SO-8  
S
1
S
2
S1  
5.15 mm  
6.15 mm  
1
G1  
2
S2  
G
G
2
1
3
G2  
4
D1  
8
D1  
7
D2  
6
D
1
D
2
D2  
Ordering Information: Si7991DP-T1  
5
P-Channel MOSFET  
P-Channel MOSFET  
Bottom View  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
−30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
−6.6  
−5.3  
−10.2  
−8.2  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
−30  
a
continuous Source Current (Diode Conduction)  
I
−2.9  
3.5  
−1.2  
1.4  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
2.2  
0.9  
Operating Junction and Storage Temperature Range  
T , T  
−55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
28  
60  
3
35  
85  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJC  
_C/W  
Maximum Junction-to-Case (Drain)  
3.7  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72515  
S-32127—Rev. B, 27-Oct-03  
www.vishay.com  
1
Si7991DP  
Vishay Siliconix  
New Product  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = −250 mA  
−1  
−3  
V
GS(th)  
DS  
GS  
D
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
= −30 V, V = 0 V  
−1  
−5  
DS  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= −30 V, V = 0 V, T = 55_C  
GS  
J
a
On-State Drain Current  
I
V
DS  
v −5 V, V = −10 V  
−30  
A
D(on)  
GS  
V
= −10 V, I = −10.0 A  
0.019  
0.027  
0.023  
0.035  
GS  
D
a
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= −4.5 V, I = −8.2 A  
GS  
D
a
Forward Transconductance  
g
22  
S
V
V
= −15 V, I = −10.0 A  
fs  
DS  
D
a
Diode Forward Voltage  
V
SD  
I
S
= −2.9 A, V = 0 V  
−0.8  
−1.2  
GS  
Dynamicb  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
38  
6.3  
9.7  
10  
57  
g
Q
Q
V
= −15 V, V = −10 V, I = −10.0 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
f = 1 MHz  
W
t
10  
15  
25  
d(on)  
t
r
15  
V
= −15 V, R = 15 W  
L
GEN G  
DD  
I
D
^ −1 A, V  
= −10 V, R = 6 W  
Turn-Off Delay Time  
Fall Time  
t
130  
70  
200  
105  
70  
ns  
d(off)  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= −2.9 A, di/dt = 100 A/ms  
45  
Notes  
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
30  
30  
24  
18  
12  
6
V
GS  
= 10 thru 4 V  
24  
18  
12  
6
T
= 125_C  
C
3 V  
25_C  
−55_C  
0
0
0
1
2
3
4
5
0.0  
0.5  
1.0  
GS  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
V
− Drain-to-Source Voltage (V)  
V
− Gate-to-Source Voltage (V)  
DS  
Document Number: 72515  
S-32127—Rev. B, 27-Oct-03  
www.vishay.com  
2
Si7991DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
On-Resistance vs. Drain Current  
Capacitance  
3000  
2500  
2000  
1500  
1000  
500  
0.05  
0.04  
C
iss  
V
GS  
= 4.5 V  
0.03  
0.02  
0.01  
0.00  
V
GS  
= 10 V  
C
oss  
C
rss  
0
0
6
12  
18  
24  
30  
0
6
12  
18  
24  
30  
I
D
− Drain Current (A)  
V
DS  
− Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
D
= 15 V  
V
= 10 V  
DS  
GS  
I
= 10 A  
I = 10 A  
D
6
4
2
0
0
5
10  
Q
15  
20  
25  
30  
35  
40  
−50 −25  
0
25  
50  
75  
100 125 150  
− Total Gate Charge (nC)  
T
− Junction Temperature (_C)  
g
J
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
30  
10  
T
= 150_C  
J
I
D
= 10 A  
I
D
= 5 A  
T
= 25_C  
J
1
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
0
2
4
6
8
10  
V
SD  
− Source-to-Drain Voltage (V)  
V
GS  
− Gate-to-Source Voltage (V)  
Document Number: 72515  
S-32127—Rev. B, 27-Oct-03  
www.vishay.com  
3
Si7991DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Threshold Voltage  
Single Pulse Power, Junction-to-Ambient  
0.8  
30  
24  
18  
0.6  
I
D
= 250 mA  
0.4  
0.2  
12  
6
0.0  
−0.2  
−0.4  
0
−50 −25  
0
25  
50  
75  
100 125 150  
0.001 0.01  
0.1  
1
10  
100  
1000  
T
− Temperature (_C)  
Time (sec)  
J
Safe Operating Area  
100  
r
Limited  
I
Limited  
DS(on)  
DM  
10  
1
P(t) = 0.001  
P(t) = 0.01  
I
D(on)  
Limited  
P(t) = 0.1  
P(t) = 1  
P(t) = 10  
dc  
T
A
= 25_C  
0.1  
Single Pulse  
BV  
DSS  
Limited  
10  
0.01  
0.1  
1
100  
V
DS  
− Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
Notes:  
P
DM  
0.1  
0.05  
0.02  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
2. Per Unit Base = R  
= 60_C/W  
thJA  
(t)  
3. T − T = P Z  
DM thJA  
JM  
A
Single Pulse  
4. Surface Mounted  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
10  
1
10  
100  
600  
Square Wave Pulse Duration (sec)  
Document Number: 72515  
S-32127—Rev. B, 27-Oct-03  
www.vishay.com  
4
Si7991DP  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
−4  
−3  
−2  
−1  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
Document Number: 72515  
S-32127—Rev. B, 27-Oct-03  
www.vishay.com  
5

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