概述
规格参数
数据手册SI7991DP-T1 概述
Dual P-Channel 30-V (D-S) MOSFET 双P通道30 - V（D -S）的MOSFET 功率场效应晶体管
SI7991DP-T1 规格参数
| 是否无铅： | 含铅 | 是否Rohs认证： | 不符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT |
| 包装说明： | SMALL OUTLINE, R-XDSO-C6 | 针数： | 8 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| 风险等级： | 5.92 | 外壳连接： | DRAIN |
| 配置： | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 6.6 A | 最大漏极电流 (ID)： | 6.6 A |
| 最大漏源导通电阻： | 0.023 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-XDSO-C6 | JESD-609代码： | e0 |
| 元件数量： | 2 | 端子数量： | 6 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | 240 |
| 极性/信道类型： | P-CHANNEL | 最大功率耗散 (Abs)： | 3.5 W |
| 最大脉冲漏极电流 (IDM)： | 30 A | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 端子面层： | Tin/Lead (Sn/Pb) | 端子形式： | C BEND |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 30 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
SI7991DP-T1 数据手册
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PDF下载Si7991DP
Vishay Siliconix
New Product
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
with Low 1.07-mm Profile
VDS (V)
rDS(on) (W)
ID (A)
0.023 @ V = −10 V
−10.2
−8.1
GS
APPLICATIONS
−30
0.035 @ V = −4.5
V
GS
D Load Switch
− Notebook PCs
− Desktop PCs
− Game Stations
D Battery Switch
PowerPAK SO-8
S
1
S
2
S1
5.15 mm
6.15 mm
1
G1
2
S2
G
G
2
1
3
G2
4
D1
8
D1
7
D2
6
D
1
D
2
D2
Ordering Information: Si7991DP-T1
5
P-Channel MOSFET
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"20
T
= 25_C
= 70_C
−6.6
−5.3
−10.2
−8.2
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−30
a
continuous Source Current (Diode Conduction)
I
−2.9
3.5
−1.2
1.4
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
2.2
0.9
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
28
60
3
35
85
a
Maximum Junction-to-Ambient
R
thJA
R
thJC
_C/W
Maximum Junction-to-Case (Drain)
3.7
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
1
Si7991DP
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = −250 mA
−1
−3
V
GS(th)
DS
GS
D
I
V
= 0 V, V = "20 V
"100
nA
GSS
DS
GS
V
= −30 V, V = 0 V
−1
−5
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 55_C
GS
J
a
On-State Drain Current
I
V
DS
v −5 V, V = −10 V
−30
A
D(on)
GS
V
= −10 V, I = −10.0 A
0.019
0.027
0.023
0.035
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −8.2 A
GS
D
a
Forward Transconductance
g
22
S
V
V
= −15 V, I = −10.0 A
fs
DS
D
a
Diode Forward Voltage
V
SD
I
S
= −2.9 A, V = 0 V
−0.8
−1.2
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
38
6.3
9.7
10
57
g
Q
Q
V
= −15 V, V = −10 V, I = −10.0 A
nC
gs
gd
DS
GS
D
R
g
f = 1 MHz
W
t
10
15
25
d(on)
t
r
15
V
= −15 V, R = 15 W
L
GEN G
DD
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
130
70
200
105
70
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I
F
= −2.9 A, di/dt = 100 A/ms
45
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
24
18
12
6
V
GS
= 10 thru 4 V
24
18
12
6
T
= 125_C
C
3 V
25_C
−55_C
0
0
0
1
2
3
4
5
0.0
0.5
1.0
GS
1.5
2.0
2.5
3.0
3.5
4.0
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
DS
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
2
Si7991DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
2500
2000
1500
1000
500
0.05
0.04
C
iss
V
GS
= 4.5 V
0.03
0.02
0.01
0.00
V
GS
= 10 V
C
oss
C
rss
0
0
6
12
18
24
30
0
6
12
18
24
30
I
D
− Drain Current (A)
V
DS
− Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
D
= 15 V
V
= 10 V
DS
GS
I
= 10 A
I = 10 A
D
6
4
2
0
0
5
10
Q
15
20
25
30
35
40
−50 −25
0
25
50
75
100 125 150
− Total Gate Charge (nC)
T
− Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
30
10
T
= 150_C
J
I
D
= 10 A
I
D
= 5 A
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
3
Si7991DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.8
30
24
18
0.6
I
D
= 250 mA
0.4
0.2
12
6
0.0
−0.2
−0.4
0
−50 −25
0
25
50
75
100 125 150
0.001 0.01
0.1
1
10
100
1000
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area
100
r
Limited
I
Limited
DS(on)
DM
10
1
P(t) = 0.001
P(t) = 0.01
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
T
A
= 25_C
0.1
Single Pulse
BV
DSS
Limited
10
0.01
0.1
1
100
V
DS
− Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 60_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
4
Si7991DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
Square Wave Pulse Duration (sec)
10
1
Document Number: 72515
S-32127—Rev. B, 27-Oct-03
www.vishay.com
5
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