品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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BL8202
中文翻译 品牌: BELLING |
BL8202是一款针对于双NMOS的半桥栅极驱动芯片,专为高压、高速驱动N型功率MOSFET和IGBT设计,可在高达250V 电压下工作。 BL8202内置VCC和VBS欠压(UVLO)保护功能, | 栅极驱动 双极性晶体管 高压 | |||
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BL8203
中文翻译 品牌: BELLING |
BL8203是一款针对于双NMOS的半桥栅极驱动芯片,专为高压、高速驱动N型功率MOSFET和IGBT设计,可在高达250V 电压下工作。 BL8203内置VCC和VBS欠压(UVLO)保护功能, | 栅极驱动 双极性晶体管 高压 | |||
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BL8601
中文翻译 品牌: BELLING |
BL8601是一款针对于双NMOS的半桥栅极驱动芯片,专为高压、高速驱动N型功率MOSFET和IGBT设计,可在高达600V 电压下工作。 BL8601内置VCC和VBS欠压(UVLO)保护功能 | 栅极驱动 双极性晶体管 高压 | |||
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BL8636
中文翻译 品牌: BELLING |
BL8636 are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase s | 双极性晶体管 | |||
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BLG10T65FUL
中文翻译 品牌: BELLING |
BLG10T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG15T65FUA
中文翻译 品牌: BELLING |
BLG15T65FUA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic in best trade-off with Vce-Eoff, optimized swiching pe | 双极性晶体管 功率因数校正 | |||
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BLG15T65FUL
中文翻译 品牌: BELLING |
BLG15T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized swiching performance and | 双极性晶体管 | |||
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BLG20T65FDLA
中文翻译 品牌: BELLING |
BLG20T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance an | 双极性晶体管 | |||
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BLG20T65FULA
中文翻译 品牌: BELLING |
BLG20T65FULA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance a | 双极性晶体管 | |||
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BLG3040
中文翻译 品牌: BELLING |
BLG3040采用先进的点火IGBT技术获得,可降低传导损耗,增强SCIS能力。内部集成二极管可以提供电压钳位,而无需外部元件。IGBT适用于汽车点火电路,特别是作为线圈驱动器。 | 汽车点火 驱动 双极性晶体管 二极管 驱动器 | |||
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BLG3040-A
中文翻译 品牌: BELLING |
BLG3040 is obtained by advanced ignition IGBTs technology which reduce the conduction loss, enhance the SCIS capability and internal diodes provide vo | 双极性晶体管 | |||
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BLG3040-I
中文翻译 品牌: BELLING |
BLG3040 is obtained by advanced ignition IGBTs technology which reduce the conduction loss, enhance the SCIS capability and internal diodes provide vo | 双极性晶体管 | |||
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BLG30T65FDK
中文翻译 品牌: BELLING |
BLG30T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 功率因数校正 | |||
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BLG30T65FDL
中文翻译 品牌: BELLING |
BLG30T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 功率因数校正 | |||
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BLG40T120FDH
中文翻译 品牌: BELLING |
BLG40T120FDH is obtained by advanced Trench Field Stop (T-FS) technology which reduce the conduction loss, improve switching performance and enhance t | 双极性晶体管 | |||
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BLG40T120FUH
中文翻译 品牌: BELLING |
BLG40T120FUH is obtained by advanced Trench Field Stop (T-FS) technology which reduce the conduction loss, improve switching performance and enhance t | 双极性晶体管 | |||
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BLG40T120FUK
中文翻译 品牌: BELLING |
BLG40T120FUK is obtained by advanced Trench Field Stop (T-FS) technology which reduce the conduction loss, improve switching performance and enhance t | 双极性晶体管 | |||
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BLG40T65FDK
中文翻译 品牌: BELLING |
BLG40T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG40T65FDL
中文翻译 品牌: BELLING |
BLG40T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low gate charge Qg and optimized switching perfor | 双极性晶体管 | |||
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BLG40T65FUK
中文翻译 品牌: BELLING |
BLG40T65FUK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance an | 双极性晶体管 | |||
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BLG40T65FUL
中文翻译 品牌: BELLING |
BLG40T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance an | 双极性晶体管 | |||
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BLG50T65FDKA
中文翻译 品牌: BELLING |
BLG50T65FDKA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance an | 双极性晶体管 | |||
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BLG50T65FDLA
中文翻译 品牌: BELLING |
BLG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance an | 双极性晶体管 | |||
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BLG60T65FDK
中文翻译 品牌: BELLING |
BLG60T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG60T65FDL
中文翻译 品牌: BELLING |
BLG60T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG60T65FUL
中文翻译 品牌: BELLING |
BLG60T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG75T65FDK
中文翻译 品牌: BELLING |
BLG75T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLG75T65FDL
中文翻译 品牌: BELLING |
BLG75T65FDL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance an | 双极性晶体管 | |||
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BLG75T65FUK
中文翻译 品牌: BELLING |
BLG75T65FUK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and | 双极性晶体管 | |||
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BLGMF200T120FAUS4
中文翻译 品牌: BELLING |
BLGMF200T120FAUS4 is standard 34mm module with advanced Trench/Field stop 4th IGBT and Fast Recovery diode. | 双极性晶体管 |
BELLING是什么品牌:上海贝岭股份有限公司前身是上海贝岭微电子制造有限公司,1988年由上海市仪表局、上海贝尔公司合资设立,是国内集成电路行业的首家中外合资企业,也是国家改革开放初期成功吸引外资和引进国外先进技术的标志性企业。1998年9月公司改制上市,是国内集成电路行业首家上市公司。1999年,华虹集团成为公司控股股东。2009年,中国电子信息产业集团有限公司(CEC)成为公司控股股东。2015年7月,华大半导体成为上海贝岭控股股东,公司实际控制人仍为CEC。
上海贝岭地处漕河泾新兴技术开发区,1999年起成为国家级企业技术中心。公司专注于集成电路芯片设计和产品应用开发,是国内集成电路产品主要供应商之一。公司集成电路产品业务布局在功率链(电源管理、功率器件、电机驱动业务)和信号链(数据转换器、电力专用芯片、物联网前端、非挥发存储器、标准信号产品业务),主要目标市场为汽车电子、工控、光伏、储能、能效监测、电力设备、光通讯、家电、短距离交通工具、高端及便携式医疗设备,以及手机摄像头模组等其它消费类应用市场。