| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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145N65M5
中文翻译 品牌: STMICROELECTRONICS |
N-channel 650 V, 0.012 Ω typ., 138 A, MDmesh⢠V Power MOSFET in Max247 package N沟道650 V， 0.012 I©典型值， 138 A， MDmeshâ ?? ¢ V功率MOSFET在MAX247包 |
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160N75F3
中文翻译 品牌: STMICROELECTRONICS |
N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSFET N沟道75V - 3.5米欧姆 - 120A - TO- 220 - TO- 247 - D2PAK的MDm |
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21N65M5
中文翻译 品牌: STMICROELECTRONICS |
N-channel 650 V, 0.175 Ω, 17 A PowerFLAT? (8x8) HV ultra low gate charge MDmesh? V Power MOSFET N沟道650 V， 0.175 Ω ， 17的PowerFLAT ？ （ 8×8 ） HV超低栅极电荷 |
栅极 | |||
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270N4F3
中文翻译 品牌: STMICROELECTRONICS |
N-channel 40V - 2.1m ohm - 160A - TO-220 - D2PAK - I2PAK STripFE TM Power MOSFET N沟道40V - 2.1米欧姆 - 160A - TO- 220 - D2PAK - I2PAK STripFE TM功率MOSFE |
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2N3650M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,100V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3651M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,200V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3653M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,400V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3654M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,50V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3655M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,100V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3656M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,200V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3657M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,300V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N3658M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,400V V(DRM),16A I(T),TO-208AA | 栅 栅极 | |||
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2N5204M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,600V V(DRM),22A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N5205M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,800V V(DRM),22A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N5206M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,1KV V(DRM),22A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N5207M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),22A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N682M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,50V V(DRM),16A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N685M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,200V V(DRM),16A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N688M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,400V V(DRM),16A I(T),TO-208VARM6 | 栅 栅极 | |||
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2N690M
中文翻译 品牌: STMICROELECTRONICS |
SILICON CONTROLLED RECTIFIER,500V V(DRM),16A I(T),TO-208VARM6 | 栅 栅极 | |||
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65N55F3
中文翻译 品牌: STMICROELECTRONICS |
N-channel 55V - 8.0m ohm - 65A - DPAK STripFET TM Power MOSFET N沟道55V - 8.0米欧姆 - 65A - DPAK封装的STripFET TM功率MOSFET |
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70AC00M
中文翻译 品牌: STMICROELECTRONICS |
AC SERIES, QUAD 2-INPUT NAND GATE, PDSO14, SOP-14 | 输入元件 光电二极管 逻辑集成电路 | ||
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74AC00M
中文翻译 品牌: STMICROELECTRONICS |
QUAD 2-INPUT NAND GATE 四路2输入与非门 |
栅极 触发器 逻辑集成电路 光电二极管 输入元件 | ||
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74AC02M
中文翻译 品牌: STMICROELECTRONICS |
QUAD 2-INPUT NOR GATE 四路2输入NOR门 |
栅极 触发器 逻辑集成电路 光电二极管 输入元件 | ||
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74AC04M
中文翻译 品牌: STMICROELECTRONICS |
HEX INVERTER 六反相器 |
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74AC08M
中文翻译 品牌: STMICROELECTRONICS |
QUAD 2-INPUT AND GATE 四2输入与门 |
输入元件 | ||
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74AC10M
中文翻译 品牌: STMICROELECTRONICS |
TRIPLE 3-INPUT NAND GATE 三路3输入与非门 |
栅极 逻辑集成电路 光电二极管 输入元件 | ||
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74AC11M
中文翻译 品牌: STMICROELECTRONICS |
TRIPLE 3-INPUT AND GATE 三路3输入与门 |
逻辑集成电路 光电二极管 输入元件 | ||
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74AC125M
中文翻译 品牌: STMICROELECTRONICS |
QUAD BUS BUFFERS 3-STATE 四路总线缓冲器三态 |
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74AC138M
中文翻译 品牌: STMICROELECTRONICS |
3 TO 8 LINE DECODER INVERTING 3至8线译码器反相 |
逻辑集成电路 光电二极管 驱动 |