品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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JS28F640J3F75A
中文翻译 品牌: MICRON |
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC) Numonyx®嵌入式闪存( J3 65 nm)的单细胞每比特( SBC ) |
闪存 | ||
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JS28F640J3F75B
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640J3F75D
中文翻译 品牌: MICRON |
32Mb, 64Mb, 128Mb, 65nm Embedded Parallel NOR Flash Memory, Single Bit Per Cell (SBC) | ||||
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JS28F640J3F75E
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P30BF75A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P30BF75D
EDA模型
中文翻译 品牌: MICRON |
64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash | ||||
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JS28F640P30TF75A
EDA模型
中文翻译 品牌: MICRON |
Numonyx® Axcell⢠P30-65nm Flash Memory Numonyx® Axcellâ ?? ¢ P30-65nm闪存 |
闪存 | ||
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JS28F640P33BF70A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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JS28F640P33TF70A
EDA模型
中文翻译 品牌: MICRON |
Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hardening precautions for the handling and assembly of semicondu | PC | ||
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M25P05-AVDW6TPTR
中文翻译 品牌: MICRON |
存储容量(Mb):512Kb(64K x 8);内存数据长度(bit):64K ;字编码数(k):64K ;最大时钟频率(MHz):50 MHz;元器件封装:8-TSSOP; | 时钟 存储 | |||
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M25P05-AVMN6P
中文翻译 品牌: MICRON |
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction t | |||
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M25P05-AVMN6TP
中文翻译 品牌: MICRON |
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction t | |||
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M25P05-AVMN6TTR
中文翻译 品牌: MICRON |
FLASH-NOR存储器IC512Kb(64Kx8)SPI50MHz8-SO | 存储 | |||
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M25P05-AVMP6G
EDA模型
中文翻译 品牌: MICRON |
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction t | |||
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M25P05-AVMP6TG
EDA模型
中文翻译 品牌: MICRON |
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction t | |||
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M25P10-AVMB3TP/Y
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | ||||
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M25P10-AVMB6TG
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMN3P/Y
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMN3TP/Y
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | ||||
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M25P10-AVMN6P
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMN6PYA
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMN6TP
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMN6TPTR
中文翻译 品牌: MICRON |
存储容量(Mb):1Mb(128K x 8);内存数据长度(bit):128K ;字编码数(k):128K ;最大时钟频率(MHz):50 MHz;元器件封装:8-SO; | 时钟 存储 | |||
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M25P10-AVMN6TPYA
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | ||||
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M25P10-AVMP6G
EDA模型
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMP6TG
EDA模型
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | |||
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M25P10-AVMP6TGTR
中文翻译 品牌: MICRON |
存储容量(Mb):1Mb(128K x 8);内存数据长度(bit):128K ;字编码数(k):128K ;最大时钟频率(MHz):50 MHz;元器件封装:8-VFQFPN(6x5); | 时钟 存储 | |||
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M25P10-V6D11
中文翻译 品牌: MICRON |
1Mb Serial NOR Flash Memory with 50 MHz Serial Peripheral Interface | ||||
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M25P128-VME6G
中文翻译 品牌: MICRON |
存储容量(Mb):128Mb(16M x 8);内存数据长度(bit):16M ;字编码数(k):16M ;最大时钟频率(MHz):50 MHz;元器件封装:8-VDFPN(MLP8)(8x6); | 时钟 存储 | ||
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M25P128-VME6GB
中文翻译 品牌: MICRON |
128Mb, 3.0V, Serial NOR Flash Memory with 54 MHz SPI Bus Interface |
MICRON是什么品牌:Micron(镁光)是美国的半导体巨头。自1978年成立以来,它一直专注于存储芯片的设计和制造。它有自己的晶圆工厂,也是美国唯一的存储芯片制造商。Micron(Micron)的主要产品是DRAM和Flash。Micron(镁光)的市值在全球半导体行业一直保持在第5-第10位,在存储行业一直排名第二。Micron(镁光)在各个国家都有Site,Micron(镁光)有近30个R&D中心和工厂,主要在美国、中国、意大利、日本、新加坡、台湾省、波多黎各、以色列、马来西亚等地。
Micron(镁光)是四大存储巨头中唯一icron(Micron)是唯一一家在上海设立R&D机构的公司。在过去的10年里,上海R&D中心已经独立生产了几代产品,现在最新的3DMemory设计也在上海落户。通过这张简单的图片,我们可以看到美光上海的设计主要分为IC、System和Control设计。