品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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M39P0R1080E4
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 动态存储器 | |||
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M39P0R1080E4ZASE
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 动态存储器 | ||
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M39P0R1080E4ZASF
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 内存集成电路 动态存储器 | ||
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M39P0R8070E2
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 动态存储器 | |||
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M39P0R8070E2ZADE
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 动态存储器 | |||
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M39P0R8070E2ZADF
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 存储 内存集成电路 动态存储器 | ||
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M39P0R9070E2
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 动态存储器 | |||
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M39P0R9070E2ZADE
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 存储 内存集成电路 动态存储器 | ||
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M39P0R9070E2ZADF
中文翻译 品牌: NUMONYX |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256或512Mbit的( X16 ,多 |
闪存 存储 内存集成电路 动态存储器 | ||
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M39P0R9080E0
中文翻译 品牌: NUMONYX |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package 512兆位( X16 ,多银行,多层次,突发)快闪记 |
动态存储器 | |||
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M39P0R9080E0ZAD
中文翻译 品牌: NUMONYX |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package 512兆位( X16 ,多银行,多层次,突发)快闪记 |
存储 内存集成电路 动态存储器 | ||
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M39P0R9080E0ZADE
中文翻译 品牌: NUMONYX |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package 512兆位( X16 ,多银行,多层次,突发)快闪记 |
存储 内存集成电路 动态存储器 | ||
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M39P0R9080E0ZADF
中文翻译 品牌: NUMONYX |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package 512兆位( X16 ,多银行,多层次,突发)快闪记 |
内存集成电路 动态存储器 | |||
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M39P0R9080E4
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 动态存储器 | |||
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M39P0R9080E4ZASE
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 存储 内存集成电路 动态存储器 | ||
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M39P0R9080E4ZASF
中文翻译 品牌: NUMONYX |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package 512 MB或1 GB( X16 ,多银行 |
闪存 存储 内存集成电路 动态存储器 | ||
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NAND256R4M3AZB5F
中文翻译 品牌: NUMONYX |
SPECIALTY MEMORY CIRCUIT, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | |||
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NAND256W3M4AZB5E
中文翻译 品牌: NUMONYX |
Memory Circuit, 16MX16, CMOS, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | ||
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NAND256W3M4AZB5F
中文翻译 品牌: NUMONYX |
Memory Circuit, 16MX16, CMOS, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | ||
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NAND256W3M4BZB5E
中文翻译 品牌: NUMONYX |
SPECIALTY MEMORY CIRCUIT, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | ||
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NAND256W3M4BZB5F
中文翻译 品牌: NUMONYX |
SPECIALTY MEMORY CIRCUIT, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | ||
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NAND256W3M4CZB5E
中文翻译 品牌: NUMONYX |
SPECIALTY MEMORY CIRCUIT, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | |||
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NAND256W3M4CZB5F
中文翻译 品牌: NUMONYX |
SPECIALTY MEMORY CIRCUIT, PBGA149, 10 X 13.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-149 | 动态存储器 内存集成电路 | ||
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NAND88R3M0AZBB5E
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND88R3M0AZBB5F
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND88R3M0BZBB5E
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND88R3M0BZBB5F
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND88R3M0CZBB5E
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND88R3M0CZBB5F
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA107, 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-107 | 动态存储器 内存集成电路 | ||
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NAND98R3M0AZBA5E
中文翻译 品牌: NUMONYX |
Memory Circuit, Flash+SDRAM, PBGA149 | 动态存储器 内存集成电路 |
NUMONYX是什么品牌:藉由收购 Numonyx 增添了Micron创新产品组合的广度,并强化了我们的能力以满足您对存储器的需求。事实上,我们相信两家专业存储器公司的结合与精进,并汇集了数十年的工程创新技术会提供您更多的选择和弹性。 当然,为实现这次收购的效益,需要对团队,营运和支持网络进行全面整合 —这个过程需要一段时间才能完成。虽然我们已经启动整合规划,但是仍还有许多任务待执行。我们将尽力使整个过程无缝实现。 作为一家联合公司,我们对客户,产品和市场的承诺不会改变,对客户未来产品的需求的支持也一如既往。