| 品牌 | 图片 | 型号 | 描述 | 用途标签 | 供应商 | |
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2N6764SCC5205/013
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 局域网 晶体管 | |||
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2N6764SCC5205/013PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 局域网 晶体管 | |||
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2N6766SCC5205/013
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | 局域网 晶体管 | |||
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2N6766SCC5205/013PBF
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | ||||
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BAT14-013
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波 | |||
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BAT14-013ES
中文翻译 品牌: INFINEON |
Mixer Diode, Medium Barrier, 5.5dB Noise Figure, Silicon, HERMETIC SEALED PACKAGE-2 | 二极管 | |||
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BAT14-013H
中文翻译 品牌: INFINEON |
暂无描述 | 半导体 肖特基二极管 微波 | |||
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BAT14-013P
中文翻译 品牌: INFINEON |
Mixer Diode, Medium Barrier, 5.5dB Noise Figure, Silicon, HERMETIC SEALED PACKAGE-2 | 半导体 肖特基二极管 微波 | |||
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BAT14-013S
中文翻译 品牌: INFINEON |
Mixer Diode, 5.5dB Noise Figure, Silicon, | 半导体 肖特基二极管 微波 | |||
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BAT15-013
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波 | |||
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BAT15-013ES
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波混频二极管 | |||
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BAT15-013H
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波混频二极管 | |||
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BAT15-013P
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波 | |||
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BAT15-013S
中文翻译 品牌: INFINEON |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) HiRel它硅肖特基二极管（ |
半导体 肖特基二极管 微波混频二极管 | |||
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BSB013NE2LXI
中文翻译 品牌: INFINEON |
n-Channel Power MOSFET N沟道功率MOSFET |
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BSB013NE2LXIXUMA1
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 36A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-3 | 开关 脉冲 晶体管 | ||
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BSZ013NE2LS5I
中文翻译 品牌: INFINEON |
Metal Oxide Semiconductor Field Effect Transistor | 开关 脉冲 光电二极管 晶体管 | |||
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BSZ013NE2LS5IATMA1
中文翻译 品牌: INFINEON |
Power Field-Effect Transistor, 32A I(D), 25V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8FL, 8 PIN | 开关 脉冲 光电二极管 晶体管 | ||
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BSZ013NE2LS5I_15
中文翻译 品牌: INFINEON |
Metal Oxide Semiconductor Field Effect Transistor | ||||
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CY27410LTXI-013
中文翻译 品牌: INFINEON |
Universal Programmable Clock Generator with VCXO and Spread Spectrum | 石英晶振 压控振荡器 | |||
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CY27410LTXI-013T
中文翻译 品牌: INFINEON |
Universal Programmable Clock Generator with VCXO and Spread Spectrum | 石英晶振 压控振荡器 | |||
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CY8C5668AXI-LP013
中文翻译 品牌: INFINEON |
CY8C56LPxxx | 时钟 | |||
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IAUC120N04S6N013
中文翻译 品牌: INFINEON |
车规级MOSFET | ||||
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IAUCN04S6N013T
中文翻译 品牌: INFINEON |
This innovative TSC package enables best cooling, high power density optimized system costs | ||||
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IAUCN08S7N013
中文翻译 品牌: INFINEON |
Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS? 7 80V. | ||||
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IAUMN08S5N013G
中文翻译 品牌: INFINEON |
OptiMOS™ 5 80V automotive MOSFET offered in our new mTOLG 8x8mm2 SMD package. It is designed speci | ||||
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IAUZN04S7N013
中文翻译 品牌: INFINEON |
The IAUZN04S7N013 is a high-current, low-RDS(on) power MOSFET in a 3x3mm2 advanced leadless packag | ||||
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IPB013N06NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET? 2?power MOSFET 60 V features lowest RDS(on) of 1.3 mOhm, addressing a broad range of applications from low- to high-switching | ||||
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IPF013N04NF2S
中文翻译 品牌: INFINEON |
Infineon's StrongIRFET™ 2 power MOSFET 40 V features low RDS(on) of 1.35 mOhm, addressing a broad range of applications from low- to high-switching fr | ||||
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IPP013N04NF2S
中文翻译 品牌: INFINEON |
英飞凌 StrongIRFET™ 2 40 V 功率 MOSFET 具备仅为 1.3 mΩ 的极低 RDS(on)，可用于从低到高开关频率的各类应用。 | 开关 |