SI7101DN-T1-GE3 封装和模型
品牌：VISHAY
描述：漏源电压Vdss(V):30V;额定电流Id(A):35A (Tc);最大导通阻抗Ron(mΩ):7.2 mOhm @ 15A, 10V;类型:P-Channel;栅极电荷Qg(nC):102nC
EDA/CDA模型
原理图符号
PCB 封装图
其他器件
- SI7192DP-T1-GE3
- SI7148DP-T1-E3
- SI7111EDN-T1-GE3
- SI7190DP-T1-GE3
- SI7121ADN-T1-GE3
- SI7139DP-T1-GE3
- SI7172DP-T1-GE3
- SI7148DP-T1-GE3
- SI7135DP-T1-GE3
- SI7113DN-T1-E3
- SI7117DN-T1-E3
- SI7115DN-T1-E3
- SI7120DN-T1-E3
- SI7114DN-T1-E3
- SI7113ADN-T1-GE3
- SI7137DP-T1-GE3
- SI7120ADN-T1-GE3
- SI7114ADN-T1-GE3
- SI7119DN-T1-GE3
- SI7149ADP-T1-GE3
- SI7145DP-T1-GE3
- SI7101DN-T1-GE3