SI7113ADN-T1-GE3 封装和模型

品牌:VISHAY
描述:漏源电压Vdss(V):100 V ;额定电流Id(A):10.8A(Tc) ;最大导通阻抗Ron(mΩ):132 毫欧 @ 3.8A,10V ;类型:P 通道 ;栅极电荷Qg(nC):16.5
EDA/CDA模型
原理图符号
PCB 封装图
其他器件
- SI7148DP-T1-E3
- SI7120ADN-T1-GE3
- SI7119DN-T1-GE3
- SI7192DP-T1-GE3
- SI7120DN-T1-E3
- SI7149ADP-T1-GE3
- SI7114ADN-T1-GE3
- SI7113ADN-T1-GE3
- SI7145DP-T1-GE3
- SI7121ADN-T1-GE3
- SI7139DP-T1-GE3
- SI7101DN-T1-GE3
- SI7135DP-T1-GE3
- SI7111EDN-T1-GE3
- SI7117DN-T1-E3
- SI7172DP-T1-GE3
- SI7137DP-T1-GE3
- SI7190DP-T1-GE3
- SI7114DN-T1-E3
- SI7113DN-T1-E3
- SI7115DN-T1-E3
- SI7148DP-T1-GE3