1N5221B...1N5267B  
					星合 子  
					Vishay Telefunken  
					XINGHE ELECTRONICS  
					Silicon Z–Diodes  
					Features  
					Very sharp reverse characteristic  
					Very high stability  
					Low reverse current level  
					V –tolerance ± 5%  
					Z
					Applications  
					94 9367  
					Voltage stabilization  
					Absolute Maximum Ratings  
					T = 25 C  
					j
					Parameter  
					Power dissipation  
					Z–current  
					Junction temperature  
					Storage temperature range  
					Test Conditions  
					75 C  
					Type  
					Symbol  
					Value  
					500  
					Unit  
					mW  
					mA  
					C
					P
					V
					T
					L
					I
					Z
					P /V  
					V
					Z
					T
					200  
					–65...+200  
					j
					T
					stg  
					C
					Maximum Thermal Resistance  
					T = 25 C  
					j
					Parameter  
					Junction ambient  
					Test Conditions  
					l=9.5mm (3/8”), T =constant  
					Symbol  
					R
					thJA  
					Value  
					300  
					Unit  
					K/W  
					L
					Electrical Characteristics  
					T = 25 C  
					j
					Parameter  
					Forward voltage  
					Test Conditions  
					I =200mA  
					Type  
					Symbol Min  
					Typ Max Unit  
					V
					F
					1.1  
					V
					F
					Dimensions in mm  
					Cathode Identification  
					0.55 max.  
					technical drawings  
					according to DIN  
					specifications  
					1.7 max.  
					94 9366  
					Standard Glass Case  
					54 A 2 DIN 41880  
					JEDEC DO 35  
					26 min.  
					3.9 max.  
					26 min.  
					Weight max. 0.3g  
					1
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