1N5221B...1N5267B
星合 子
Vishay Telefunken
XINGHE ELECTRONICS
Silicon Z–Diodes
Features
Very sharp reverse characteristic
Very high stability
Low reverse current level
V –tolerance ± 5%
Z
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
75 C
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
T
L
I
Z
P /V
V
Z
T
200
–65...+200
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T =constant
Symbol
R
thJA
Value
300
Unit
K/W
L
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
V
F
1.1
V
F
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
1.7 max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 min.
3.9 max.
26 min.
Weight max. 0.3g
1
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