1N4001G THRU 1N4007G
GLASS PASSIVATED SILICON RECTIFIER
1.0 Ampere
Reverse Voltage - 50 to 1000 Volts Forward Current -
FEATURES
DO-41
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
1.0 (25.4)
MIN.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
0.107 (2.7)
0.080 (2.0)
DIA.
250 C/10 seconds,0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.205 (5.2)
0.160(4.1)
MECHANICAL DATA
1.0 (25.4)
MIN.
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.034 (0.86)
0.028 (0.70)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight:0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
1N
1N
1N
1N
1N
1N
SYMBOLS
MDD Catalog
UNITS
800 1000 VOLTS
560 700
VOLTS
Number
4006G 4007G
4001G 4002G 4003G 4004G 4005G
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200 400
140 280
200 400
600
420
600
VRRM
VRMS
VDC
100
800 1000 VOLTS
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at TA=75 C
Peak forward surge current
I(AV)
1.0
Amp
IFSM
30.0
1.1
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
VF
IR
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
5.0
50.0
µ
A
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
RθJA
pF
C/W
C
15.0
50.0
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
”
(9.5mm)lead length,P.C.B. mounted
2.Thermal resistance from junction to ambient at 0.375
MDD ELECTRONIC
