2SK3541T2L--Datasheet/数据表在线中文翻译

2SK3541

Transistor

2.5V Drive Nch MOS FET

2SK3541

zExternal dimensions (Unit : mm)

zStructure

Silicon N-channel

MOSFET

VMT3

1.2

0.32

(3)

zApplications

( )( )

1 2

Interfacing, switching (30V, 100mA)

0.22

0.13

0.4 0.4

0.5

0.8

(1)Gate

zFeatures

1) Low on-resistance.

(2)Source

(3)Drain

Abbreviated symbol : KN

2) Fast switching speed.

3) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

4) Drive circuits can be simple.

5) Parallel use is easy.

zPackaging specifications

zEquivalent circuit

Package

Code

Taping

T2L

Drain

Type

Basic ordering unit

(pieces)

8000

2SK3541

Gate

zAbsolute maximum ratings (Ta=25°C)

∗ Gate

Protection

Diode

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

Unit

Source

VDSS

GSS

∗A protection diode is included between the gate

and the source terminals to protect the diode

against static electricity when the product is in use.

Use a protection circuit when the fixed voltages

are exceeded.

Continuous

Pulsed

100

°C

Drain current

∗

400

∗

150

Total power dissipation

Channel temperature

Tch

150

Tstg

−55 to +150

°C

Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

Rev.B

1/3

2SK3541

Transistor

zElectrical characteristics (Ta=25°C)

Symbol Min.

Typ.

−

Max.

Unit

µA

Conditions

VGS= 20V, VDS=0V

Parameter

GSS

(BR)DSS

DSS

−

Gate-source leakage

−

D=10µA, VGS=0V

Drain-source breakdown voltage

−

1.0

1.5

µA

DS=30V, VGS=0V

Zero gate voltage drain curren

GS(th)

DS(on)

0.8

−

DS=3V, I =100µA

Gate threshold voltage

Ω

=10mA, VGS=4V

=1mA, VGS=2.5V

=10mA, VDS=3V

DS=5V

Static drain-source on-state

resistance

−

Ω

|Yfs

−

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

iss

oss

rss

d(on)

−

GS=0V

−

f=1MHz

−

D=10mA, VDD 5V

−

GS=5V

d(off)

−

Turn-off delay time

Fall time

RL=500Ω

−

=10Ω

zElectrical characteristic curves

0.15

200m

1.5

DS=3V

100m

50m

=0.1mA

Pulsed

Ta=25°C

Pulsed

3.5V

20m

10m

0.1

2.5V

Ta=125°C

0.05

75°C

25°C

−25°C

0.5

0.5m

0.2m

0.1m

GS=1.5V

−50 −25

75 100 125 150

DRAIN-SOURCE VOLTAGE : VDS (V)

CHANNEL TEMPERATURE : Tch (°C)

GATE-SOURCE VOLTAGE : VGS (V)

Fig.1 Typical output characteristics

Fig.2 Typical transfer characteristics

Fig.3 Gate threshold voltage vs.

channel temperature

GS=4V

Ta=25°C

Pulsed

GS=2.5V

Pulsed

Ta=125°C

75°C

Ta=125°C

75°C

25°C

−25°C

25°C

−25°C

D=0.1A

D=0.05A

0.5

0.001 0.002

0.5

0.001 0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0.005

0.01

0.02

0.05

0.1

0.2

0.5

DRAIN CURRENT : ID (A)

GATE-SOURCE VOLTAGE : VGS (V)

DRAIN CURRENT : ID (A)

Fig.4 Static drain-source on-state

resistance vs. drain current (Ι)

Fig.6 Static drain-source

on-state resistance vs.

gate-source voltage

Fig.5 Static drain-source on-state

resistance vs. drain current (ΙΙ)

Rev.B

2/3

2SK3541

Transistor

0.5

0.2

200m

GS=4V

DS=3V

GS=0V

Pulsed

100m

50m

Ta=−25°C

25°C

=100mA

0.1

20m

75°C

Ta=125°C

0.05

125°C

10m

ID=50mA

75°C

25°C

−25°C

0.02

0.01

0.005

0.5m

0.002

0.001

0.2m

0.1m

0.0001 0.0002

0.0005 0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

−50 −25

75 100 125 150

0.5

1.5

DRAIN CURRENT : ID (A)

CHANNEL TEMPERATURE : Tch (°C)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.8 Forward transfer

Fig.7 Static drain-source on-state

resistance vs. channel

temperature

Fig.9 Reverse drain current vs.

admittance vs. drain current

source-drain voltage (Ι)

200m

1000

500

Ta=25°C

Pulsed

Ta=25°C

DD=5V

GS=5V

f=1MH

100m

50m

VGS=0V

d(off)

RG=10Ω

Pulsed

200

100

Ciss

20m

10m

GS=4V

Coss

d(on)

Crss

0.5m

0.2m

0.1m

0.5

0.1 0.2

0.5

0.1 0.2

0.5

10 20 50

100

0.5

1.5

DRAIN-SOURCE VOLTAGE : VDS (V)

DRAIN CURRENT : ID (mA)

SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.11 Typical capacitance vs.

drain-source voltage

Fig.12 Switching characteristics

Fig.10 Reverse drain current vs.

(See Figures 13 and 14 for

the measurement circuit

and resultant waveforms)

source-drain voltage (ΙΙ)

zSwitching characteristics measurement circuit

Pulse width

90%

50%

10%

50%

D.U.T.

10%

90%

VDD

90%

d (on)

d (off)

off

Fig.13 Switching time measurement circuit

Fig.14 Switching time waveforms

Rev.B

3/3

Notice

N o t e s

1) The information contained herein is subject to change without notice.

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Therefore, in order to prevent personal injury or fire arising from failure, please take safety

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provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

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