转到网站首页
转为中文步骤：
1、请用电脑端360浏览器打开本页地址，如您电脑未安装360浏览器，请点这里下载;
2、点击360浏览器右上角的翻译插件，如右图红圈中所示:
3、点击所弹出窗口里的右下角的按钮 “翻译当前网页”;
4、弹窗提示翻译完毕后关闭弹窗即可；
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A  
FEATURES  
• Ultrafast Non Punch Through (NPT) technology  
• Positive VCE(on) temperature coefficient  
• 10 μs short circuit capability  
• HEXFRED® antiparallel diodes with ultrasoft reverse  
recovery  
• Low diode VF  
• Square RBSOA  
• Al2O3 DBC substrate  
MTP  
• Very low stray inductance design for high speed operation  
• UL approved file E78996  
• Speed 8 kHz to 60 kHz  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
PRODUCT SUMMARY  
BENEFITS  
VCES  
1200 V  
20 A  
• Optimized for welding, UPS and SMPS applications  
• Rugged with ultrafast performance  
• Outstanding ZVS and hard switching operation  
• Low EMI, requires less snubbing  
• Excellent current sharing in parallel operation  
• Direct mounting to heatsink  
IC at TC = 96 °C  
VCE(on) (typical)  
at IC = 20 A, 25 °C  
3.29 V  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCES  
IC  
TEST CONDITIONS  
MAX.  
1200  
20  
UNITS  
Collector to emitter breakdown voltage  
Continuous collector current  
Pulsed collector current  
V
TC = 96 °C  
ICM  
100  
100  
100  
20  
A
Clamped inductive load current  
Diode maximum forward current  
Gate to emitter voltage  
ILM  
IFM  
VGE  
V
RMS isolation voltage  
VISOL  
Any terminal to case, t = 1 minute  
TC = 25 °C  
2500  
240  
96  
Maximum power dissipation (only IGBT)  
PD  
W
T
C = 100 °C  
Document Number: 94470  
Revision: 03-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX. UNITS  
Collector to emitter breakdown voltage  
V(BR)CES  
VGE = 0 V, IC = 250 μA  
1200  
-
V
Temperature coefficient of breakdown voltage V(BR)CES/TJ VGE = 0 V, IC = 3 mA (25 to 125 °C)  
-
-
-
-
-
-
4
-
-
-
-
-
-
+ 1.3  
3.29  
4.42  
3.87  
5.32  
3.99  
-
-
V/°C  
VGE = 15 V, IC = 20 A  
VGE = 15 V, IC = 40 A  
3.59  
4.66  
4.11  
5.70  
4.27  
6
Collector to emitter saturation voltage  
VCE(on)  
VGE = 15 V, IC = 20 A, TJ = 125 °C  
VGE = 15 V, IC = 40 A, TJ = 125 °C  
VGE = 15 V, IC = 20 A, TJ = 150 °C  
VCE = VGE, IC = 250 μA  
V
Gate threshold voltage  
VGE(th)  
VGE(th)/TJ  
gfe  
Temperature coefficient of threshold voltage  
Transconductance  
VCE = VGE, IC = 3 mA (25 to 125 °C)  
VCE = 50 V, IC = 20 A, PW = 80 μs  
VGE = 0 V, VCE = 1200 V, TJ = 25 °C  
VGE = 0 V, VCE = 1200 V, TJ = 125 °C  
- 14  
17.5  
-
-
mV/°C  
S
-
250  
3.0  
9.0  
250  
μA  
(1)  
Zero gate voltage collector current  
Gate to emitter leakage current  
ICES  
0.7  
2.9  
-
mA  
nA  
V
GE = 0 V, VCE = 1200 V, TJ = 150 °C  
IGES  
VGE 20 V  
=
Note  
(1)  
ICES includes also opposite leg overall leakage  
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
176  
19  
MAX. UNITS  
Total gate charge (turn-on)  
Gate to emitter charge (turn-on)  
Gate to collector charge (turn-on)  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Qg  
-
-
-
-
-
-
-
-
-
-
-
-
264  
IC = 20 A  
VCC = 600 V  
GE = 15 V  
Qge  
Qgc  
30  
nC  
mJ  
pF  
V
89  
134  
VCC = 600 V, IC = 20 A, VGE = 15 V,  
Rg = 5 , L = 200 μH, TJ = 25 °C,  
energy losses include tail and  
diode reverse recovery  
Eon  
0.513 0.770  
0.402 0.603  
0.915 1.373  
0.930 1.395  
0.610 0.915  
1.540 2.310  
Eoff  
Etot  
VCC = 600 V, IC = 20 A, VGE = 15 V,  
Rg = 5 , L = 200 μH, TJ = 125 °C,  
energy losses include tail and  
diode reverse recovery  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Eon  
Eoff  
Etot  
Input capacitance  
Cies  
Coes  
Cres  
2530  
344  
78  
3790  
516  
VGE = 0 V  
VCC = 30 V  
f = 1.0 MHz  
Output capacitance  
Reverse transfer capacitance  
117  
TJ = 150 °C, IC = 120 A  
Reverse bias safe operating area  
Short circuit safe operating area  
RBSOA  
SCSOA  
V
CC = 1000 V, Vp = 1200 V  
Fullsquare  
-
Rg = 5 , VGE = + 15 V to 0 V  
TJ = 150 °C  
VCC = 900 V, Vp = 1200 V  
10  
-
μs  
Rg = 5 , VGE = + 15 V to 0 V  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94470  
Revision: 03-Aug-10  
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP. MAX. UNITS  
IC = 20 A  
IC = 40 A  
-
-
-
-
-
-
-
-
2.48  
3.28  
2.44  
3.45  
2.21  
420  
98  
2.94  
3.90  
2.84  
4.14  
2.93  
630  
150  
50  
Diode forward voltage drop  
VFM  
IC = 20 A, TJ = 125 °C  
IC = 40 A, TJ = 125 °C  
IC = 20 A, TJ = 150 °C  
V
Reverse recovery energy of the diode  
Diode reverse recovery time  
Erec  
trr  
μJ  
ns  
A
VGE = 15 V, Rg = 5 , L = 200 μH  
VCC = 600 V, IC = 20 A  
TJ = 125 °C  
Peak reverse recovery current  
Irr  
33  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
- 40  
- 40  
-
TYP. MAX. UNITS  
Operating junction temperature range  
Storage temperature range  
TJ  
-
150  
125  
0.64  
0.83  
-
°C  
TStg  
-
IGBT  
0.53  
0.69  
0.06  
-
Junction to case  
Diode  
RthJC  
RthCS  
-
°C/W  
Case to sink per module  
Clearance  
Heatsink compound thermal conductivity = 1 W/mK  
External shortest distance in air between 2 terminals  
-
5.5  
-
mm  
Shortest distance along external surface of the  
insulating material between 2 terminals  
Creepage  
8
-
-
A mounting compound is recommended and the  
torque should be checked after 3 hours to allow for  
the spread of the compound. Lubricated threads.  
Mounting torque  
Weight  
3
10 ꢀ  
66  
Nm  
g
Document Number: 94470  
Revision: 03-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
160  
140  
1000  
100  
10  
DC  
120  
100  
80  
60  
1
40  
10  
100  
1000  
10000  
0
5
10  
15  
20  
25  
V
(V)  
CE  
I
C
(A)  
Fig. 1 - Maximum DC Collector Current vs. Case Temperature  
Fig. 4 - Reverse Bias SOA  
TJ = 150 °C; VGE = 15 V  
250  
200  
150  
100  
50  
100  
80  
60  
40  
20  
0
V
= 18V  
GE  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
0
0
2
4
6
8
10  
0
20 40 60 80 100 120 140 160  
(°C)  
V
(V)  
T
CE  
C
Fig. 2 - Power Dissipation vs. Case Temperature  
Fig. 5 - Typical IGBT Output Characteristics  
TJ = - 40 °C; tp = 80 μs  
100  
80  
60  
40  
20  
0
1000  
100  
V
= 18V  
GE  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
10 µs  
10  
100 µs  
1
1ms  
DC  
0.1  
0.01  
1
10  
100  
(V)  
1000  
10000  
0
2
4
6
8
10  
V
V
(V)  
CE  
CE  
Fig. 3 - Forward SOA  
C = 25 °C; TJ 150 °C  
Fig. 6 - Typical IGBT Output Characteristics  
TJ = 25 °C; tp = 80 μs  
T
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94470  
Revision: 03-Aug-10  
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
20  
18  
16  
14  
12  
10  
8
100  
80  
60  
40  
20  
0
V
= 18V  
GE  
I
= 10A  
= 20A  
= 40A  
CE  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 8.0V  
I
CE  
I
CE  
6
4
2
0
0
2
4
6
8
10  
5
10  
15  
20  
V
(V)  
CE  
V
(V)  
GE  
Fig. 7 - Typical IGBT Output Characteristics  
TJ = 125 °C; tp = 80 μs  
Fig. 10 - Typical VCE vs. VGE  
TJ = 25 °C  
20  
18  
16  
14  
12  
10  
8
120  
I
I
I
= 10A  
= 20A  
= 40A  
CE  
CE  
CE  
-40°C  
25°C  
100  
80  
60  
40  
20  
0
125°C  
6
4
2
0
0.0  
1.0  
2.0  
3.0  
(V)  
4.0  
5.0  
5
10  
15  
20  
V
V
(V)  
F
GE  
Fig. 8 - Typical Diode Forward Characteristics  
tp = 80 μs  
Fig. 11 - Typical VCE vs. VGE  
TJ = 125 °C  
20  
300  
250  
200  
150  
100  
50  
18  
16  
14  
12  
10  
8
I
= 40A  
= 20A  
= 10A  
T
T
= 25°C  
CE  
J
J
I
= 150°C  
CE  
I
CE  
6
4
2
0
0
0
5
10  
15  
20  
5
10  
15  
20  
V
(V)  
V
(V)  
GE  
GE  
Fig. 9 - Typical VCE vs. VGE  
TJ = - 40 °C  
Fig. 12 - Typical Transfer Characteristics  
CE = 50 V; tp = 10 μs  
V
Document Number: 94470  
Revision: 03-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
2400  
2000  
1000  
100  
10  
td  
OFF  
E
ON  
1600  
1200  
800  
400  
0
t
F
E
td  
OFF  
40  
ON  
t
R
0
10  
20  
30  
(
40  
50  
60  
0
10  
20  
30  
50  
R
)
Ω
I
(A)  
G
C
Fig. 13 - Typical Energy Loss vs. IC  
TJ = 150 °C; L = 1.4 mH; VCE = 400 V  
Fig. 16 - Typical Switching Time vs. Rg  
TJ = 150 °C; L = 1.4 mH; VCE = 400 V  
Rg = 5 ; VGE = 15 V  
ICE = 5.0A; VGE = 15 V  
1000  
100  
10  
40  
30  
20  
10  
0
R
5.0  
Ω
G =  
R
10  
Ω
G =  
td  
OFF  
t
R
30  
Ω
F
G =  
R
50  
Ω
G =  
td  
ON  
t
R
0
5
10  
15  
I
20  
(A)  
25  
30  
35  
0
10  
20  
30  
40  
50  
I
(A)  
F
C
Fig. 14 - Typical Switching Time vs. IC  
TJ = 150 °C; L = 1.4 mH; VCE = 400 V  
Rg = 100 ; VGE = 15 V  
Fig. 17 - Typical Diode Irr vs. IF  
TJ = 150 °C  
40  
30  
20  
10  
0
2000  
1600  
1200  
800  
400  
0
E
ON  
E
OFF  
0
10  
20  
30  
(
40  
50  
60  
0
10  
20  
30  
(
40  
50  
60  
R
)
Ω
R
Ω)  
G
G
Fig. 18 - Typical Diode Irr vs. Rg  
TJ = 150 °C; IF = 5.0 A  
Fig. 15 - Typical Energy Loss vs. Rg  
TJ = 150 °C; L = 1.4 mH; VCE = 400 V  
CE = 5.0A; VGE = 15 V  
I
www.vishay.com  
6
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94470  
Revision: 03-Aug-10  
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
40  
35  
30  
25  
20  
15  
10  
10000  
1000  
100  
Cies  
Coes  
Cres  
10  
0
20  
40  
60  
(V)  
80  
100  
0
200  
400  
600  
800  
1000  
V
di /dt (A/µs)  
CE  
F
Fig. 19 - Typical Diode Irr vs. dIF/dt  
CC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C  
Fig. 21 - Typical Capacitance vs. VCE  
VGE = 0 V; f = 1 MHz  
V
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
16  
14  
12  
10  
8
5.0  
Ω
600V  
10  
Ω
30A  
20A  
30  
Ω
50  
Ω
6
10A  
4
2
0
0
40  
Q
80  
120  
160  
200  
0
200  
400  
600  
800 1000 1200  
, Total Gate Charge (nC)  
di /dt (A/µs)  
G
F
Fig. 20 - Typical Diode Qrr  
VCC = 400 V; VGE = 15 V; TJ = 150 °C  
Fig. 22 - Typical Gate Charge vs. VGE  
ICE = 5.0 A; L = 600 μH  
1
D = 0.5  
D = 0.2  
0.1  
0.01  
D = 0.1  
D = 0.05  
D = 0.02  
D =0.01  
Single Pulse  
(Thermal Response)  
0.001  
0.0001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)  
Document Number: 94470  
Revision: 03-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
7
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
1
D = 0.5  
D = 0.2  
D = 0.1  
0.1  
0.01  
D = 0.05  
D = 0.02  
D =0.01  
Single Pulse  
(Thermal Response)  
0.001  
0.0001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)  
Driver  
L
VCC  
+
D
C
+
-
D.U.T.  
-
900 V  
0
1 K  
D.U.T.  
Fig. CT.1 - Gate Charge Circuit (Turn-Off)  
Fig. CT.3 - S.C. SOA Circuit  
L
Diode clamp/  
D.U.T.  
L
+
-
- 5 V  
80 V  
+
-
D.U.T  
+
-
D.U.T./  
driver  
1000 V  
Rg  
VCC  
Rg  
Fig. CT.2 - RBSOA Circuit  
Fig. CT.4 - Switching Loss Circuit  
www.vishay.com  
8
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 94470  
Revision: 03-Aug-10  
20MT120UFAPbF  
Vishay Semiconductors  
"Full Bridge" IGBT MTP  
(Ultrafast NPT IGBT), 20 A  
9, 10  
5
6
4
3
15, 16  
13, 14  
2
1
7
8
11, 12  
Fig. 25 - Electrical diagram  
ORDERING INFORMATION TABLE  
Device code  
20  
MT 120  
U
F
A
PbF  
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Current rating (20 = 20 A)  
Essential part number  
1
2
3
4
5
6
7
Voltage code (120 = 1200 V)  
Speed/type (U = Ultrafast IGBT)  
Circuit configuration (F = Full bridge)  
A = Al2O3 DBC substrate  
Lead (Pb)-free  
CIRCUIT CONFIGURATION  
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95245  
Document Number: 94470  
Revision: 03-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
9
Outline Dimensions  
Vishay Semiconductors  
MTP MOSFET/IGBT Full-Bridge  
DIMENSIONS in millimeters  
Ø 5  
Ø 1.1  
4
2ꢀ.5  
12 ꢀ.5  
2.5  
31.8  
33  
3
2
13  
4
9
1
8
14  
15  
11  
1ꢀ  
12  
5
16  
6
7
ꢀ.3 ꢀ.1  
7
6.6 ꢀ.1  
Ø 5.2 x 3  
8
ꢀ.1  
7.4 ꢀ.1  
3
ꢀ.1  
8
ꢀ.1  
7.4 ꢀ.1  
7
ꢀ.1  
R5.75 (x 2)  
4.9 ꢀ.1  
6.6 ꢀ.1  
39.5  
44.5  
48.7  
ꢀ.6 x h1.2  
1.3  
63.5 ꢀ.25  
Document Number: 95245  
Revision: 24-Sep-08  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please  
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free  
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference  
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21  
conform to JEDEC JS709A standards.  
Revision: 02-Oct-12  
Document Number: 91000  
1