转到网站首页
转为中文步骤：
1、请用电脑端360浏览器打开本页地址，如您电脑未安装360浏览器，请点这里下载;
2、点击360浏览器右上角的翻译插件，如右图红圈中所示:
3、点击所弹出窗口里的右下角的按钮 “翻译当前网页”;
4、弹窗提示翻译完毕后关闭弹窗即可；
2SA673, 2SA673A  
Silicon PNP Epitaxial  
REJ03G0626-0200  
(Previous ADE-208-125)  
Rev.2.00  
Aug.10.2005  
Application  
•
•
Low frequency amplifier  
Complementary pair with 2SC1213 and 2SC1213A  
Outline  
RENESAS Package code: PRSS0003DA-A  
(Package name: TO-92 (1))  
1. Emitter  
2. Collector  
3. Base  
3
2
1
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SA673  
–35  
2SA673A  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
–50  
–50  
–35  
V
–4  
–4  
V
–500  
–500  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
400  
Tj  
150  
150  
Tstg  
–55 to +150  
–55 to +150  
Rev.2.00 Aug 10, 2005 page 1 of 4  
2SA673, 2SA673A  
Electrical Characteristics  
(Ta = 25°C)  
2SA673  
Typ  
2SA673A  
Typ  
Item  
Symbol  
Unit  
Test conditions  
Min  
Max  
Min  
Max  
Collector to base  
breakdown voltage  
V(BR)CBO  
–35  
—
—
–50  
—
—
V
IC = –10 µA, IE = 0  
IC = –1 mA, RBE = ∞  
IE = –10 µA, IC = 0  
Collector to emitter  
breakdown voltage  
V(BR)CEO  
V(BR)EBO  
–35  
–4  
—
—
—
—
–50  
–4  
—
—
—
—
V
V
Emitter to base  
breakdown voltage  
Collector cutoff current  
ICBO  
—
—
—
–0.5  
–0.6  
—
—
—
–0.5  
–0.6  
µA VCB = –20 V, IE = 0  
Collector to emitter  
saturation voltage  
VCE(sat)  
–0.2  
–0.2  
V
IC = –150 mA,  
IB = –15 mA*2  
1
DC current transfer ratio  
DC current transfer ratio  
Base to emitter voltage  
hFE  
*
60  
10  
—
—
—
320  
—
60  
10  
—
—
—
320  
—
VCE = –3 V,  
IC = –10 mA  
hFE  
VCE = –3 V,  
IC = –500 mA*2  
VBE  
–0.64  
—
–0.64  
—
V
VCE = –3 V,  
IC =–10 mA  
Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.  
2. Pulse test  
B
C
D
60 to 120  
100 to 200  
160 to 320  
Rev.2.00 Aug 10, 2005 page 2 of 4  
2SA673, 2SA673A  
Main Characteristics  
Maximum Collector Dissipation Curve  
Typical Output Characteristics (1)  
–100  
–80  
–60  
–40  
–20  
600  
400  
200  
–0.2  
–0.1 mA  
IB = 0  
0
–2  
–4  
–6  
–8  
–10  
0
50  
100  
150  
Collector to Emitter Voltage VCE (V)  
Ambient Temperature Ta (°C)  
Typical Output Characteristics (2)  
Typical Transfer Characteristics  
–500  
–400  
–300  
–200  
–100  
–30  
VCE = –3 V  
–7  
–6  
–10  
–5  
–4  
–3  
–3  
–2  
–1 mA  
–1.0  
P
C = 400 mW  
IB = 0  
–4  
–0.3  
0
–2  
–6  
–8  
–10  
0
–0.2 –0.4 –0.6 –0.8 –1.0  
Collector to Emitter Voltage VCE (V)  
Base to Emitter Voltage VBE (V)  
DC Current Transfer Ratio vs.  
Collector Current  
Gain Bandwidth Product vs.  
Collector Current  
150  
100  
50  
240  
200  
160  
120  
80  
VCE = –3 V  
VCE = –3 V  
40  
0
0
–2  
–5 –10 –20  
–50 –100 –200 –500  
–5 –10 –20  
–50 –100 –200 –500  
Collector Current IC (mA)  
Collector Current IC (mA)  
Rev.2.00 Aug 10, 2005 page 3 of 4  
2SA673, 2SA673A  
Package Dimensions  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003DA-A  
Package Name  
MASS[Typ.]  
0.25g  
Unit: mm  
TO-92(1) / TO-92(1)V  
4.8 0.3  
3.8 0.3  
0.60 Max  
0.55 Max  
0.5 Max  
1.27  
2.54  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
Hold Box, Radial Taping  
2SA673BTZ-E  
2SA673CTZ-E  
2SA673DTZ-E  
2SA673ABTZ-E  
2SA673ACTZ-E  
2SA673ADTZ-E  
2500  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Aug 10, 2005 page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
Renesas Technology Korea Co., Ltd.  
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea  
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145  
Renesas Technology Malaysia Sdn. Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: <603> 7955-9390, Fax: <603> 7955-9510  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0