WTE  
					PO WER SEMICONDUCTORS  
					1N4001 – 1N4007  
					1.0A SILICON RECTIFIER  
					Features  
					!
					Diffused Junction  
					!
					!
					!
					!
					Low Forward Voltage Drop  
					High Current Capability  
					High Reliability  
					A
					B
					A
					High Surge Current Capability  
					Mechanical Data  
					C
					!
					!
					Case: Molded Plastic  
					D
					Terminals: Plated Leads Solderable per  
					MIL-STD-202, Method 208  
					Polarity: Cathode Band  
					Weight: 0.35 grams (approx.)  
					Mounting Position: Any  
					DO-41  
					Dim  
					A
					Min  
					25.4  
					4.06  
					0.71  
					2.00  
					Max  
					—
					!
					!
					!
					!
					B
					5.21  
					0.864  
					2.72  
					C
					Marking: Type Number  
					D
					All Dimensions in mm  
					Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
					Single Phase, half wave, 60Hz, resistive or inductive load.  
					For capacitive load, derate current by 20%.  
					1N  
					4001  
					1N  
					4002  
					1N  
					4003  
					1N  
					4004  
					1N  
					4005  
					1N  
					4006  
					1N  
					4007  
					Characteristic  
					Symbol  
					Unit  
					Peak Repetitive Reverse Voltage  
					Working Peak Reverse Voltage  
					DC Blocking Voltage  
					VRRM  
					VRWM  
					VR  
					50  
					35  
					100  
					70  
					200  
					140  
					400  
					600  
					420  
					800  
					560  
					1000  
					700  
					V
					RMS Reverse Voltage  
					VR(RMS)  
					IO  
					280  
					1.0  
					V
					A
					Average Rectified Output Current  
					(Note 1)  
					@TA = 75°C  
					Non-Repetitive Peak Forward Surge Current  
					8.3ms Single half sine-wave superimposed on  
					rated load (JEDEC Method)  
					IFSM  
					30  
					A
					Forward Voltage  
					@IF = 1.0A  
					VFM  
					IRM  
					1.0  
					V
					µA  
					Peak Reverse Current  
					At Rated DC Blocking Voltage @TA = 100°C  
					@TA = 25°C  
					5.0  
					50  
					Typical Junction Capacitance (Note 2)  
					Cj  
					15  
					50  
					pF  
					Typical Thermal Resistance Junction to Ambient  
					(Note 1)  
					RꢀJA  
					K/W  
					Operating Temperature Range  
					Storage Temperature Range  
					Tj  
					-65 to +125  
					-65 to +150  
					°C  
					°C  
					TSTG  
					*Glass passivated forms are available upon request  
					Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
					2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.  
					1N4001 – 1N4007  
					1 of 3  
					© 2002 Won-Top Electronics