转到网站首页
转为中文步骤:
1、请用电脑端360浏览器打开本页地址,如您电脑未安装360浏览器,请点这里下载;
2、点击360浏览器右上角的翻译插件,如右图红圈中所示:
3、点击所弹出窗口里的右下角的按钮 “翻译当前网页”;
4、弹窗提示翻译完毕后关闭弹窗即可;
1SS119  
Silicon Epitaxial Planar Diode for High Speed Switching  
REJ03G0564-0300  
(Previous: ADE-208-180B)  
Rev.3.00  
Mar 23, 2005  
Features  
Low capacitance. (C = 3.0 pF max)  
Short reverse recovery time. (trr = 3.5 ns max)  
Small glass package (MHD) enables easy mounting and high reliability.  
Ordering Information  
Package Code  
(Previous Code)  
Type No.  
Cathode band  
Package Name  
1SS119  
Light Blue  
MHD  
GRZZ0002ZC-A  
(MHD)  
Pin Arrangement  
2
1
Cathode band  
1. Cathode  
2. Anode  
Rev.3.00 Mar 22, 2005 page 1 of 4  
1SS119  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
V
Item  
Peak reverse voltage  
Reverse voltage  
Average rectified current  
Peak forward current  
Symbol  
Value  
35  
30  
150  
450  
VRM  
VR  
IO  
V
mA  
mA  
A
IFM  
Non-Repetitive peak forward surge current IFSM  
*
1
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
Tstg  
250  
175  
65 to +175  
mW  
°C  
°C  
Note: Within 1s forward surge current.  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
IF = 10 mA  
VR = 30 V  
VR = 1 V, f = 1 MHz  
IF = 10 mA, VR = 6 V, RL = 50 Ω  
Item  
Symbol  
VF  
IR  
C
Min  
Typ  
Max  
0.8  
0.1  
3.0  
3.5  
Unit  
V
µA  
pF  
ns  
Forward voltage  
Reverse current  
Capacitance  
Reverse recovery time  
trr *  
Note: Reverse recovery time test circuit  
DC  
Supply  
3 k  
0.1 µF  
Pulse  
Generator  
Sampling  
Oscilloscope  
Ro = 50 Ω  
Rin = 50 Ω  
Trigger  
Rev.3.00 Mar 23, 2005 page 2 of 4  
1SS119  
Main Characteristic  
10–1  
10–4  
10–5  
10–6  
10–7  
10–8  
10–9  
Ta = 125°C  
Ta = 75°C  
10–2  
10–3  
10–4  
Ta = 25°C  
0
0.2  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.4  
0.6  
0.8  
1.0  
1.2  
0
10  
20  
30  
40  
50  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
f = 1MHz  
10  
1.0  
0.1  
1.0  
10  
100  
Reverse voltage VR (V)  
Fig.3 Capacitance vs. Reverse voltage  
Rev.3.00 Mar 23, 2005 page 3 of 4  
1SS119  
Package Dimensions  
JEITA Package Code  
RENESAS Code  
Previous Code  
MHD / MHDV  
MASS[Typ.]  
0.084g  
GRZZ0002ZC-A  
L
E
L
φb  
φD  
Reference  
Symbol  
Dimension in Millimeters  
Min  
Nom Max  
φb  
φD  
E
-
-
-
-
-
0.4  
2.0  
-
2.4  
-
L
26.0  
-
Rev.3.00 Mar 23, 2005 page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon 2.0