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1SS106  
Silicon Schottky Barrier Diode for Various Detector,  
High Speed Switching  
REJ03G0125-0200Z  
(Previous: ADE-208-153A)  
Rev.2.00  
Oct.23.2003  
Features  
Detection efficiency is very good.  
Small temperature coefficient.  
High reliability with glass seal..  
Ordering Information  
Type No.  
Cathode  
2nd band  
Mark  
Package Code  
1SS106  
White  
White  
H
DO-35  
Pin Arrangement  
2
1
2nd band  
Cathode band  
1. Cathode  
2. Anode  
Rev.2.00, Oct.23.2003, page 1 of 4  
1SS106  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
VR  
Value  
Unit  
V
Reverse voltage  
Average rectified current  
Junction temperature  
Storage temperature  
10  
IO  
30  
mA  
°C  
Tj  
125  
Tstg  
–55 to +125  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
mA  
µA  
pF  
Test Condition  
VF = 1 V  
Forward current  
Reverse current  
Capacitance  
ESD-Capability *1  
IF  
4.5  
IR  
C
70  
VR = 6 V  
1.5  
VR = 1 V, f = 1 MHz  
100  
V
C = 200 pF, Both forward and  
reverse direction 1 pulse.  
Note: 1. Failure criterion; IR 140 µA at VR = 6 V  
Rev.2.00, Oct.23.2003, page 2 of 4  
1SS106  
Main Characteristics  
10–1  
10–2  
10–3  
10–4  
10–5  
10–2  
10–3  
10–4  
10–5  
10–6  
0
0.4  
Forward voltage VF (V)  
Fig.1 Forward current vs. Forward voltage  
0.8  
1.2  
1.6  
2.0  
0
2
4
6
8
10  
Reverse voltage VR (V)  
Fig.2 Reverse current vs. Reverse voltage  
f = 1MHz  
10  
1.0  
0.1  
0.1  
1.0  
10  
Reverse voltage VR (V)  
Fig.2 Capacitance vs. Reverse voltage  
Rev.2.00, Oct.23.2003, page 3 of 4  
1SS106  
Package Dimensions  
As of January, 2003  
Unit: mm  
26.0 Min  
26.0 Min  
4.2 Max  
Package Code  
DO-35  
JEDEC  
JEITA  
Mass (reference value)  
Conforms  
Conforms  
0.13 g  
Rev.2.00, Oct.23.2003, page 4 of 4  
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