2SC5509-T2-A-FB--Datasheet/数据表在线中文翻译

Preliminary Data Sheet

2SC5509

NPN SILICON RF TRANSISTOR

R09DS0056EJ0300

FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

Rev.3.00

Mar 5, 2013

FEATURES

•

Ideal for medium output power amplification

NF = 1.2 dB TYP., G_a= 12 dB TYP. @ V_CE= 2 V, I_C= 10 mA, f = 2 GHz

Maximum available power gain: MAG = 14 dB TYP. @ V_CE= 2 V, I_C= 50 mA, f = 2 GHz

f_T= 25 GHz technology adopted

Flat-lead 4-pin thin-type super minimold (M04) package

<R>

ORDERING INFORMATION

Part Number

Order Number

Quantity

Package

Supplying Form

2SC5509

2SC5509-A

50 pcs (Non reel) Flat-lead 4-pin

thin-type super

•

8 mm wide embossed taping

Pin 1 (Emitter), Pin 2 (Collector) face

the perforation side of the tape

minimold (M04)

(Pb-Free)

2SC5509-T2

2SC5509-T2-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T_C= 25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

3.3

1.5

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

P_tot

190

T_j

150

T_stg

−65 to +150

Note Free air.

THERMAL RESISTANCE

Parameter

Symbol

R_{th j-c}

Ratings

Unit

°C /W

Junction to Case Resistance

Junction to Ambient Resistance

R_{th j-a}

650

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 1 of 8

2SC5509

Chapter Title

ELECTRICAL CHARACTERISTICS (T_A= +25 °C)

Parameter

DC Characteristics

Symbol

Conditions

MIN. TYP. MAX. Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

I_CBO

V_CB= 5 V, I_E= 0

–

600

100

–

I_EBO

V_EB= 1 V, I_C= 0

Note 1

h_FE

V_CE= 2 V, I_C= 10 mA

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Noise Figure

f_T

V_CE= 3 V, I_C= 90 mA, f = 2 GHz

V_CE= 2 V, I_C= 50 mA, f = 2 GHz

–

GHz

|S_21e

V_CE= 2 V, I_C= 10 mA, f = 2 GHz,

Z_S= Z_opt

–

1.2

1.7

Note 2

Reverse Transfer Capacitance

Maximum Available Power Gain

Maximum Stable Power Gain

C_re

V_CB= 2 V, I_E= 0, f = 1 MHz

–

0.5

0.75

MAG ^{Note 3}V_CE= 2 V, I_C= 50 mA, f = 2 GHz

MSG ^{Note 4}V_CE= 2 V, I_C= 50 mA, f = 2 GHz

–

Gain 1 dB Compression Output

Power

P_{O (1 dB)}

V_CE= 2 V, I_C= 70 mA ^{Note 5}, f = 2 GHz

dBm

3rd Order Intermodulation

OIP₃

V_CE= 2 V, I_C= 70 mA ^{Note 5}, f = 2 GHz

–

dBm

Distortion Output Intercept Point

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

S21

S¹²

(K – √ (K²– 1) )

3. MAG =

S21

4. MSG =

S12

5. Collector current when P_{O (1 dB)}is output

h_FECLASSIFICATION

Rank

FB/YFB

T80

Marking

h_FEValue

50 to 100

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 2 of 8

2SC5509

Chapter Title

TYPICAL CHARACTERISTICS (T = +25°C, unless otherwise specified)

Thermal/DC Characteristics

TOTAL POWER DISSIPATION vs. AMBIENT

TEMPERATURE, CASE TEMPERATURE

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

400

When case temperature

is specified

CE = 2 V

350

330

300

Mounted on

ceramic substrate

(15 × 15 mm, t = 0.6 mm)

250

200

190

150

100

Free Air

100

125

150

(˚C)

0.2

0.4

0.6

0.8

1.0

1.2

Ambient Temperature T

(˚C), Case Temperature T

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

DC CURRENT GAIN vs.

COLLECTOR CURRENT

150

100

200

150

100

CE = 2 V

100

0.001

0.01

0.1

100

Collector to Emitter Voltage VCE (V)

Collector Current I (mA)

Capacitance/f_TCharacteristics

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

1.00

CE = 3 V

f =1MHz

f = 2 GHz

0.80

0.60

0.40

0.20

1.0

2.0

3.0

4.0

5.0

100

(mA)

1 000

Collector to Base Voltage VCB (V)

Collector Current I

Remark The graphs indicate nominal characteristics.

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 3 of 8

2SC5509

Chapter Title

Gain Characteristics

INSERTION POWER GAIN,

MAG, MSG vs. FREQUENCY

CE = 2 V

I = 50 mA

MSG

MAG

|S21e

0.1

1.0

Frequency f (GHz)

10.0

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

CE = 2 V

VCE = 2 V

f = 2 GHz

f = 1 GHz

MSG

MAG

MSG

MAG

|S21e

Collector Current I

100

Collector Current I (mA)

100

(mA)

Output Characteristics

OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER

OUTPUT POWER, COLLECTOR

CURRENT vs. INPUT POWER

150

125

100

CE = 2 V

VCE = 2 V

f = 2 GHz

out

f = 1 GHz

125

100

out

–5

–15

–5

–15

–10

–5

–10

–5

Input Power Pⁱⁿ(dBm)

Remark The graphs indicate nominal characteristics.

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 4 of 8

2SC5509

Chapter Title

Noise Characteristics

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6.0

5.0

4.0

3.0

2.0

6.0

5.0

4.0

3.0

2.0

CE = 2 V

VCE = 2 V

f = 1.5 GHz

f = 1 GHz

1.0

0.0

1.0

0.0

100

Collector Current I

Collector Current I (mA)

(mA)

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

NOISE FIGURE, ASSOCIATED GAIN

vs. COLLECTOR CURRENT

6.0

5.0

4.0

3.0

2.0

6.0

5.0

4.0

3.0

2.0

CE = 2 V

VCE = 2 V

f = 2.5 GHz

f = 2 GHz

1.0

0.0

1.0

0.0

100

Collector Current I

Collector Current I (mA)

(mA)

Remark The graphs indicate nominal characteristics.

<R>

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 5 of 8

2SC5509

Chapter Title

EQUAL NF CIRCLE

CE = 2 V

I = 10 mA

f = 1 GHz

Unstable Area

NFmin = 0.95 dB

opt

CE = 2 V

I = 10 mA

f = 2 GHz

NFmin = 1.1 dB

opt

1.5 dB

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 6 of 8

2SC5509

Chapter Title

NOISE PARAMETERS

V_CE= 2 V, I_C= 5 mA

V_CE= 2 V, I_C= 20 mA

NF_min

(dB)

G_a

Γ_opt

NF_min

(dB)

G_a

Γ_opt

ANG.

−164.8

Rn/50

(GHz)

(dB)

(GHz)

(dB)

MAG.

0.17

0.18

0.20

0.32

0.40

ANG.

MAG.

0.30

0.31

0.32

0.39

0.45

0.47

0.49

0.56

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

0.70

0.74

0.78

0.98

1.10

1.14

1.18

1.39

18.0

17.0

16.2

13.6

12.5

12.2

11.8

9.9

93.0

0.11

0.09

0.07

0.06

0.08

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

1.12

1.15

1.18

1.31

1.38

1.41

1.43

1.56

20.7

19.7

18.8

15.7

14.4

14.0

13.6

11.5

0.08

0.09

0.10

0.11

0.14

103.0

112.7

155.4

176.2

−162.7

−160.7

−151.5

−146.3

−144.6

−142.9

−133.5

0.43 −177.8

0.46 −172.2

0.56 −151.8

V_CE= 2 V, I_C= 10 mA

V_CE= 2 V, I_C= 50 mA

NF_min

(dB)

G_a

Γ_opt

NF_min

(dB)

G_a

Γ_opt

Rn/50

(GHz)

(dB)

(GHz)

(dB)

MAG.

0.13

0.15

0.17

ANG.

170.3

171.5

173.0

MAG.

0.49

0.50

0.55

0.59

0.60

0.61

0.65

ANG.

−159.4

−157.2

−154.9

−144.7

−139.1

−137.3

−135.5

−126.4

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

0.87

0.90

0.93

1.07

1.15

1.18

1.20

1.35

19.6

18.6

17.8

14.8

13.6

13.2

12.8

10.9

0.09

0.08

0.07

0.10

0.8

0.9

1.0

1.5

1.8

1.9

2.0

2.5

1.75

1.78

1.80

1.92

2.00

2.02

2.04

2.17

21.3

20.3

19.4

16.2

14.8

14.4

13.9

11.8

0.10

0.11

0.14

0.17

0.19

0.20

0.28

0.30 −174.1

0.39 −164.1

0.41 −160.6

0.44 −157.2

0.53 −142.3

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 7 of 8

2SC5509

Chapter Title

<R> PACKAGE DIMENSIONS

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm)

(Top View)

(Bottom View)

2.05±0.1

1.25±0.1

(1.05)

0.5

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

R09DS0056EJ0300 Rev.3.00

Mar 5, 2013

Page 8 of 8

Revision History

2SC5509 Data Sheet

Description

Summary

Rev.

Date

Page

1.00

3.00

Sep 9, 2004

Mar 5, 2013

−

First edition issued

Throughout Renesas format is applied to this data sheet.

p.1

p.5

p.8

ORDERING INFORMATION is modified.

Up to date S-PARAMETERS.

Added a drawing backside to PACKAGE DIMENSIONS.

All trademarks and registered trademarks are the property of their respective owners.

C - 1

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[Colophon 2.2]