1N4001GP-E3/54--Datasheet/数据表在线中文翻译

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP

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Vishay General Semiconductor

Glass Passivated Junction Plastic Rectifier

FEATURES

• Superectifier structure for high reliability

application

SUPERECTIFIER^®

• Cavity-free glass-passivated junction

• Low forward voltage drop

• Low leakage current, typical I_Rless than 0.1 μA

• High forward surge capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

DO-204AL (DO-41)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in general purpose rectification of power supplies,

inverters, converters and freewheeling diodes for consumer

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

V_RRM

MECHANICAL DATA

I

_FSM(8.3 ms sine-wave)

30 A

45 A

Case: DO-204AL (DO-41), molded epoxy over glass body

I_FSM(square wave t_p= 1 ms)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

I_R

V_F

5.0 μA

1.1 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

T_Jmax.

175 °C

Package

Diode variations

DO-204AL (DO-41)

Single die

Polarity: Color band denotes cathode end

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

Maximum repetitive peak

reverse voltage

V_RRM

50

100

200

400

600

800

1000

V

(1)

Maximum RMS voltage

V_RMS

V_DC

35

50

70

140

200

280

400

420

600

560

800

700

V

(1)

Maximum DC blocking voltage

Maximum average forward rectified

current 0.375" (9.5 mm) lead length I_F(AV)

at T_A= 75 °C

100

1000

(1)

1.0

30

A

Peak forward surge current 8.3 ms

single half sine-wave

superimposed on rated load

(1)

I_FSM

I_R(AV)

Non-repetitive peak

forward surge current 

square waveform

T_A= 25 °C (fig. 3)

t_p= 1 ms

45

35

30

t_p= 2 ms

t_p= 5 ms

A

Maximum full load reverse current,

full cycle average 0.375" (9.5 mm)

lead length T_A= 75 °C

30

μA

Rating for fusing (t < 8.3 ms)

I²t ⁽²⁾

3.7

A²s

°C

Operating junction and

storage temperature range

(1)

T_J, T_STG

-65 to +175

Notes

(1)

JEDEC^®registered values

For device using on bridge rectifier application

(2)

Revision: 07-Nov-16

Document Number: 88504

1

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

TEST

CONDITIONS

PARAMETER

SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

Maximum

instantaneous

forward voltage

1.0 A

V_F

1.1

V

Maximum DC

reverse current

at rated DC

T_A= 25 °C

5.0

50

(1)

I_R

μA

T_A= 125 °C

blocking voltage

I_F= 0.5 A,

Typical reverse

recovery time

I

_R= 1.0 A,

t_rr

2.0

8.0

μs

I_rr= 0.25 A

Typical junction

capacitance

4.0 V,

1 MHz

C_J

pF

Note

(3)

JEDEC^®registered values

THERMAL CHARACTERISTICS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP UNIT

(1)

R_JA

R_JL

55

25

°C/

W

Typical thermal resistance

(1)

Note

(1)

Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, PCB mounted

ORDERING INFORMATION (Example)

PREFERRED P/N

1N4004GP-E3/54

1N4004GP-E3/73

UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY

DELIVERY MODE

0.335

54

73

5500

3000

13" diameter paper tape and reel

Ammo pack packaging

RATINGS AND CHARACTERISTICS CURVES (T_A= 25 °C unless otherwise noted)

1.0

0.8

0.6

0.4

0.2

0

30

25

20

15

10

5

T_J= T_JMax.

8.3 ms Single Half Sine-Wave

60 Hz

Resistive or Inductive Load

0.375" (9.5 mm) Lead Length

0

25

50

Ambient Temperature (°C)

Fig. 1 - Forward Current Derating Curve

75

100

125

150

175

1

10

100

Number of Cycles at 60 Hz

Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current

Revision: 07-Nov-16

Document Number: 88504

2

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP

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Vishay General Semiconductor

50

45

40

35

30

25

20

15

10

100

T_J= 25 °C

f = 1.0 MHz

V_sig= 50 mV_p-p

t_p= 1 ms

t_p= 2 ms

10

t_p= 5 ms

t_p

Square Waveform

1

25

50

75

100

125

0.1

1

10

100

Ambient Temperature (°C)

Reverse Voltage (V)

Fig. 3 - Non-Repetitive Peak Forward Surge Current

Fig. 6 - Typical Junction Capacitance

100

10

1

T_J= 25 °C

Pulse Width = 300 μs

1 % Duty Cycle

1

0.1

0.01

0.1

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

t - Pulse Duration (s)

Fig. 4 - Typical Instantaneous Forward Characteristics

Fig. 7 - Typical Transient Thermal Impedance

10

T_J= 100 °C

1

0.1

T_J= 25 °C

0.01

0

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

Fig. 5 - Typical Reverse Characteristics

Revision: 07-Nov-16

Document Number: 88504

3

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N4001GP, 1N4002GP, 1N4003GP, 1N4004GP, 1N4005GP, 1N4006GP, 1N4007GP

www.vishay.com

Vishay General Semiconductor

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

Note

• Lead diameter is

0.026 (0.66)

0.023 (0.58)

for sufﬁx “E” part numbers

Revision: 07-Nov-16

Document Number: 88504

4

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Revision: 08-Feb-17

Document Number: 91000

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