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1SS119-14  
Silicon Epitaxial Planar Diode for High Speed Switching  
ADE-208-970 (Z)  
Rev.0  
Sep. 2000  
Features  
•
•
•
Low capacitance. (C = 3.0 pF max)  
Short reverse recovery time. (trr = 3.5 ns max)  
Small glass package (MHD) enables easy mounting and high reliability.  
Ordering Information  
Type No.  
Cathode band  
Package Code  
1SS119 -14  
Light Blue  
MHD  
Outline  
2
1
Cathode band  
1. Cathode  
2. Anode  
1SS119-14  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Value  
Unit  
V
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
IO  
35  
30  
V
Average rectified current  
Peak forward current  
Non-Repetitive peak forward surge current  
Power dissipation  
150  
mA  
mA  
A
IFM  
IFSM  
Pd  
Tj  
450  
*
1
250  
mW  
°C  
°C  
Junction temperature  
Storage temperature  
175  
Tstg  
−65 to +175  
Note: Within 1s forward surge current.  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
0.8  
0.1  
3.0  
3.5  
Unit  
V
Test Condition  
Forward voltage  
Reverse current  
Capacitance  
VF  
IR  
IF = 10 mA  
VR = 30 V  
µA  
pF  
ns  
C
VR = 1 V, f = 1 MHz  
Reverse recovery time  
trr *  
IF = 10 mA, VR = 6 V, RL = 50 Ω  
Note: Reverse recovery time test circuit  
DC  
Supply  
3kΩ  
0.1µF  
Sampling  
Oscilloscope  
Ro = 50Ω Pulse  
Generator  
Rin = 50Ω  
Trigger  
2
1SS119-14  
Main Characteristic  
10-1  
10-4  
10-5  
10-6  
10-7  
Ta = 125°C  
Ta = 75°C  
10-2  
10-3  
Ta = 25°C  
10-8  
10-9  
10-4  
0.6  
Forward voltage VF (V)  
Fig.1 Forward current Vs. Forward voltage  
30  
0
0.2  
0.4  
0.8  
1.0 1.2  
0
10  
20  
40  
50  
Reverse voltage VR (V)  
Fig.2 Reverse current Vs. Reverse voltage  
f=1MHz  
10  
1.0  
0.1  
1.0  
10  
100  
Reverse voltage V R(V)  
Fig.3 Capacitance Vs. Reverse voltage  
3
1SS119-14  
Package Dimensions  
Unit: mm  
26.0 Min  
26.0 Min  
2.4 Max  
Hitachi Code  
JEDEC  
EIAJ  
MHD  
Conforms  
—
Mass (reference value)  
0.084 g  
4
1SS119-14  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://www.hitachi.com.sg/grp3/sicd  
: http://www.hitachi.co.jp/Sicd/index.htm  
Japan  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7th Flr, North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Fax: 535-1533  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
Taipei Branch Office  
3rd Flr, Hung Kuo Building, No.167,  
Tun Hwa North Road, Taipei (105)  
Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 23222 HAS-TP  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 1.0  
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