2SA673AD-E--Datasheet/数据表在线中文翻译

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2SA673, 2SA673A

Silicon PNP Epitaxial

ADE-208-125 (Z)

1st. Edition

Mar. 2001

Application

•

Low frequency amplifier

Complementary pair with 2SC1213 and 2SC1213A

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

2SA673, 2SA673A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

2SA673

–35

2SA673A

–50

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–35

–50

–4

–500

400

–500

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

2SA673

2SA673A

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

–35

–4

—

–50

–4

—

I_C= –10 µA, I_E= 0

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

V_CB= –20 V, I_E= 0

Collector to emitter

breakdown voltage

—

Emitter to base

breakdown voltage

—

Collector cutoff current I_CBO

—

–0.5

—

–0.5 µA

Collector to emitter

saturation voltage

V_CE(sat)

–0.2 –0.6

I_C= –150 mA,

I_B= –15 mA*²

DC current trnsfer ratio h_FE*¹

DC current trnsfer ratio h_FE

Base to emitter voltage V_BE

—

320

—

320

—

V_CE= –3 V,

I_C= –10 mA

V_CE= –3 V,

I_C= –500 mA*²

–0.64 —

V_CE= –3 V,

I_C=–10 mA

Notes: 1. The 2SA673 and 2SA673A are grouped by h_FEas follows.

2. Pulse test

60 to 120

100 to 200 160 to 320

2SA673, 2SA673A

Typical Output Characteristics (1)

Maximum Collector Dissipation Curve

–100

–80

–60

–40

–20

600

400

200

–0.2

–0.1 mA

I_B= 0

–2

–4

–6

–8

–10

100

150

Collector to Emitter Voltage V_CE(V)

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

Typical Transfer Characteristics

–500

–400

–300

–200

–100

–30

–10

V_CE= –3 V

–7

–6

–5

–4

–3

–2

–1 mA

–1.0

_C= 400 mW

I_B= 0

–4

Collector to Emitter Voltage V_CE(V)

–0.3

–2

–6

–8

–10

–0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage V_BE(V)

2SA673, 2SA673A

DC Current Transfer Ratio vs.

Collector Current

Gain Bandwidth Product vs.

Collector Current

150

100

240

200

160

120

V_CE= –3 V

–5 –10 –20

–50 –100 –200 –500

–2

–5 –10 –20

–50 –100 –200 –500

Collector Current I_C(mA)

2SA673, 2SA673A

Package Dimensions

As of January, 2001

Unit: mm

4.8 ± 0.4

3.8 ± 0.4

0.60 Max

0.55Max

0.5Max

1.27

2.54

Hitachi Code

JEDEC

EIAJ

TO-92 (1)

Conforms

0.25 g

Mass (reference value)

2SA673, 2SA673A

Cautions

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Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

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products.

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