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Balanced Three-chip SIDACtor Device  
Balanced Three-chip SIDACtor Device  
This balanced protector is a surface mount alternative to the modified TO-220 package.  
Based on a six-pin surface mount SOIC package, it uses Littelfuse’s patented “Y”  
(US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.  
1
2
3
6
5
4
SIDACtor devices are used to enable equipment to meet various regulatory requirements  
including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A  
(formerly known as FCC Part 68).  
Electrical Parameters  
V
V
V
V
S
DRM  
S
DRM  
Volts  
Volts  
Volts  
Volts  
Part  
V
I
I
I
I
C
O
T
DRM  
S
T
H
Number *  
Pins 1-3, 1-4  
Pins 3-4  
Volts  
µAmps mAmps Amps mAmps  
pF  
80  
80  
80  
80  
60  
60  
60  
60  
80  
60  
P1553U_  
P1803U_  
P2103U_  
P2353U_  
P2703U_  
P3203U_  
P3403U_  
P5103U_  
A2106U_3 **  
A5030U_3 **  
130  
150  
170  
200  
230  
270  
300  
420  
170  
400  
180  
210  
250  
270  
300  
350  
400  
600  
250  
550  
130  
150  
170  
200  
230  
270  
300  
420  
50  
180  
210  
250  
270  
300  
350  
400  
600  
80  
8
8
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
150  
120  
150  
270  
340  
* For individual “UA”, “UB”, and “UC” surge ratings, see table below.  
** Asymmetrical  
General Notes:  
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA”, “UB”, and  
O
“UC” products.  
•
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
B
C
150  
250  
500  
150  
250  
400  
90  
150  
200  
50  
100  
150  
45  
80  
100  
20  
30  
50  
500  
500  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 20  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
Balanced Three-chip SIDACtor Device  
Thermal Considerations  
Package  
Modified MS-013  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
T
J
6
5
4
T
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
IT  
Peak  
Value  
100  
50  
I
S  
I
H
Waveform = tr x td  
I
DRM  
-V  
+V  
Half Value  
VDRM  
VT  
VS  
0
tr  
td  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2004 Littelfuse, Inc.  
2 - 21  
http://www.littelfuse.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide