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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
Cautions  
Keep safety first in your circuit designs!  
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better  
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with  
semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate  
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or  
(iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas  
Technology Corporation product best suited to the customer's application; they do not convey any  
license under any intellectual property rights, or any other rights, belonging to Renesas Technology  
Corporation or a third party.  
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any  
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or  
circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and  
algorithms represents information on products at the time of publication of these materials, and are  
subject to change by Renesas Technology Corporation without notice due to product improvements or  
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation  
or an authorized Renesas Technology Corporation product distributor for the latest product information  
before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss  
rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corporation by various  
means, including the Renesas Technology Corporation Semiconductor home page  
(http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams,  
charts, programs, and algorithms, please be sure to evaluate all information as a total system before  
making a final decision on the applicability of the information and products. Renesas Technology  
Corporation assumes no responsibility for any damage, liability or other loss resulting from the  
information contained herein.  
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device  
or system that is used under circumstances in which human life is potentially at stake. Please contact  
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor  
when considering the use of a product contained herein for any specific purposes, such as apparatus or  
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.  
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in  
whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be  
exported under a license from the Japanese government and cannot be imported into a country other  
than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the  
country of destination is prohibited.  
8. Please contact Renesas Technology Corporation for further details on these materials or the products  
contained therein.  
1SS82  
Silicon Epitaxial Planar Diode for High Voltage Switching  
ADE-208-149B (Z)  
Rev.2  
Oct. 2000  
Features  
•
•
High reverse voltage. (VR = 200 V)  
High reliability with glass seal.  
Ordering Information  
Type No.  
Cathode band  
2nd band  
Package Code  
DO-35  
1SS82  
Verdure  
Light Blue  
Pin Arrangement  
2
1
2nd band  
Cathode band  
1. Cathode  
2. Anode  
1SS82  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Symbol  
Value  
250  
Unit  
V
1
Peak reverse voltage  
Reverse voltage  
VRM  
VR  
IFM  
IFSM  
IO  
*
200  
V
Peak forward current  
Non-Repetitive peak forward surge current  
Average forward current  
Power dissipation  
625  
mA  
A
2
*
1
200  
mA  
mW  
°C  
°C  
Pd  
Tj  
400  
Junction temperature  
Storage temperature  
175  
Tstg  
−65 to +175  
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.  
2. Within 1s forward surge current.  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
1.0  
0.2  
100  
Unit  
V
Test Condition  
Forward voltage  
Reverse current  
VF  
IR1  
IR2  
C
IF = 100 mA  
µA  
VR = 200 V  
VR = 250 V  
Capacitance  
1.5  
pF  
ns  
VR = 0 V, f = 1 MHz  
IF = IR =30 mA, Irr = 3 mA, RL = 100 Ω  
Reverse recovery time trr  
100  
Rev.2, Oct. 2000, page 2 of 5  
1SS82  
Main Characteristic  
10−1  
10-5  
Ta = 75°C  
Ta = 50°C  
10-6  
10−2  
10-7  
10-8  
10-9  
10−3  
Ta = 25°C  
10−4  
150  
0
50  
100  
200 250 300  
0.6  
Forward voltage VF (V)  
0
0.2  
0.4  
0.8  
1.0 1.2  
Reverse voltage VR (V)  
Fig.2 Reverse current Vs. Reverse voltage  
Fig.1 Forward current Vs. Forward voltage  
f = 1MHz  
10  
1.0  
0.1  
1.0  
10  
100  
Reverse voltage VR (V)  
Fig.3 Capacitance Vs. Reverse voltage  
Rev.2, Oct. 2000, page 3 of 5  
1SS82  
Package Dimensions  
Unit: mm  
26.0 Min  
26.0 Min  
4.2 Max  
Hitachi Code  
DO-35  
JEDEC  
EIAJ  
Mass (reference value)  
Conforms  
Conforms  
0.13 g  
Rev.2, Oct. 2000, page 4 of 5  
1SS82  
Disclaimer  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Sales Offices  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
Hitachi Europe Ltd.  
Hitachi Asia Ltd.  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
(America) Inc.  
Electronic Components Group  
Hitachi Tower  
179 East Tasman Drive Whitebrook Park  
San Jose,CA 95134  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
16 Collyer Quay #20-00  
Singapore 049318  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Lower Cookham Road  
World Finance Centre,  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 4.0  
Rev.2, Oct. 2000, page 5 of 5