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Bulletin I27195 06/06  
25MT060WFA  
"FULL-BRIDGE" IGBT MTP  
Warp Speed IGBT  
Features  
•
•
Gen. 4 Warp Speed IGBT Technology  
HEXFRED TM Antiparallel Diodes with  
UltraSoft Reverse Recovery  
50 A  
VCES = 600V  
•
•
Very Low Conduction and Switching Losses  
Optional SMT Thermistor  
• Al2O3 DBC  
•
Very Low Stray Inductance Design for  
High Speed Operation  
Benefits  
•
•
Optimized for Welding, UPS and SMPS  
Applications  
Operating Frequencies > 20 kHz Hard Switching,  
>200 kHz Resonant Mode  
•
•
•
•
•
Low EMI, requires Less Snubbing  
Direct Mounting to Heatsink  
PCB Solderable Terminals  
Very Low Junction-to-Case Thermal Resistance  
UL pending  
MMTP  
Absolute Maximum Ratings  
Parameters  
Max  
Units  
VCES  
IC  
Collector-to-Emitter Voltage  
Continuos Collector Current  
600  
50  
V
A
@ TC = 72°C  
@ TC = 100°C  
32  
ICM  
ILM  
Pulsed Collector Current  
Peak Switching Current  
200  
200  
25  
I F  
Diode Continuous Forward Current  
Peak Diode Forward Current  
Gate-to-Emitter Voltage  
@ TC = 100°C  
IFM  
200  
± 20  
2500  
195  
78  
VGE  
VISOL  
PD  
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min  
Maximum Power Dissipation  
per single IGBT  
@ TC = 25°C  
@ TC = 100°C  
W
Document Number: 93911  
www.vishay.com  
1
25MT060WFA  
Bulletin I27195 06/06  
Electrical Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
V(BR)CES Collector-to-Emitter Breakdown Voltage 600  
V
VGE = 0V, IC = 250μA  
ΔV(BR)CES/ Temperature Coeff. of  
+0.6  
V/°C VGE = 0V, IC = 4mA (25-125°C)  
ΔTJ  
Breakdown Voltage  
VCE(ON) Collector-to-Emitter Saturation Voltage  
2.22 3.14  
V
VGE = 15V, IC = 25A  
2.43 3.25  
1.65 1.93  
2.08 2.45  
6
VGE = 15V, IC = 50A  
VGE = 15V, IC = 25A TJ = 150°C  
VGE = 15V, IC = 50A TJ = 150°C  
VCE = VGE, IC = 250μA  
VGE(th)  
Gate Threshold Voltage  
3
ΔVGE(th)/ Temperature Coeff. of  
-17  
mV/°C VCE = VGE, IC = 250μA (25-125°C)  
ΔTJ  
gfe  
Threshold Voltage  
Transconductance  
Zero Gate Voltage Collector Current (1)  
43  
S
VCE = 100V, IC = 25A, PW = 80μs  
ICES  
250  
10  
μA VGE = 0V, VCE = 600V, TJ = 25°C  
mA VGE = 0V, VCE = 600V, TJ = 150°C  
IGES  
VFM  
Gate-to-Emitter Leakage Current  
Diode Forward Voltage Drop  
±250 nA VGE = ± 20V  
1.36 1.64  
1.57 1.93  
1.19 1.42  
1.48 1.80  
V
IC = 25A  
IC = 50A  
IC = 25A, TJ = 150°C  
IC = 50A, TJ = 150°C  
(1) I CES includes also opposite leg overall leakage  
Switching Characteristics @ T = 25°C (unless otherwise specified)  
J
Parameters  
Min Typ Max Units Test Conditions  
Q
Q
Q
Total Gate Charge (turn-on)  
Gate-Emitter Charge (turn-on)  
Gate-Collector Charge (turn-on)  
Turn-On Switching Loss  
175  
27  
263  
41  
nC IC = 25A  
VCC = 480V  
g
ge  
gc  
71  
107  
VGE = 15V  
E
E
E
E
E
E
134  
415  
549  
391  
492  
201  
623  
824  
586  
738  
μJ Rg= 5Ω , IC = 25A  
on  
off  
ts  
Turn-Off Switching Loss  
Total Switching Loss  
VCC = 480V  
VGE = ±15V  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
μJ Rg= 5Ω , IC = 25A  
VCC = 480V  
on  
off  
883 1324  
3610 5415  
714 1071  
VGE = ±15V, TJ = 125°C  
pF VGE = 0V  
ts  
C
C
C
Input Capacitance  
ies  
Output Capacitance  
VCC = 30V  
oes  
Reverse Transfer Capacitance  
Diode Reverse Recovery Time  
Diode Peak Reverse Current  
Diode Recovery Charge  
58  
50  
87  
f = 1.0 MHz  
ns VR = 200V, IC = 25A  
res  
trr  
Irr  
4.5  
112  
250  
A
di/dt = 200A/μs  
Qrr  
nC  
di  
M/ Diode PeakRate of Fall of Recovery  
During tb  
A/μs  
(rec) dt  
Document Number: 93911  
www.vishay.com  
2
25MT060WFA  
Bulletin I27195 06/06  
Thermal- Mechanical Specifications  
Parameters  
Min  
Typ  
0.06  
66  
Max  
Units  
TJ  
Operating Junction Temperature Range  
Storage Temperature Range  
- 40  
- 40  
150  
125  
°C  
TSTG  
RthJC  
Junction-to-Case  
IGBT  
0.64  
0.9  
°C/ W  
Diode  
RthCS  
Case-to-Sink  
Module  
(Heatsink Compound Thermal Conductivity = 1 W/mK)  
(2)  
Clearance  
(external shortest distance in air  
5.5  
8
mm  
g
between two terminals)  
(2)  
Creepage  
(shortest distance along external  
surface of the insulating material between 2 terminals)  
Weight  
(2) Standard version only i.e. without optional thermistor  
2.75  
2.25  
1.75  
1.25  
165  
145  
125  
105  
85  
I
= 50A  
= 25A  
C
I
C
65  
45  
I
=
C
12.5A  
25  
0
10  
20  
30  
40  
50  
60  
20  
40  
60  
80  
100  
120  
140  
160  
T
, Junction Temperature (°C)  
IC Maximum DC Collector Current (A)  
J
Fig. 4 - Maximum Collector Current vs. Case  
Fig. 5 - Typical Collector-to-Emitter Voltage  
Temperature  
vs. Junction Temperature  
Document Number: 93911  
www.vishay.com  
3
25MT060WFA  
Bulletin I27195 06/06  
1
0.1  
D = 0.5  
D = 0.2  
D = 0.1  
D = 0.05  
D = 0.02  
0.01  
D =0.01  
Single Pulse  
(Thermal Response)  
0.001  
0.0001  
0.000001 0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig. 6a Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
0.02  
0.01  
0.01  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
SINGLE PULSE  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 6b Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)  
t , Thermal Response  
1
Document Number: 93911  
www.vishay.com  
4
25MT060WFA  
Bulletin I27195 06/06  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
16.0  
12.0  
8.0  
V
= 0V, f = 1 MHZ  
GE  
I
= 25A  
C
C
C
C
= C +C , C SHORTED  
ies  
res  
oes  
ge  
gc ce  
V
= 480V  
CE  
= C  
gc  
= C + C  
ce  
gc  
Cies  
Coes  
Cres  
4.0  
0.0  
1
10  
100  
1000  
0
50  
100  
150  
200  
V
(V)  
Q
Total Gate Charge (nC)  
CE  
G,  
Fig. 7 - Typical Capacitance vs.  
Fig. 8 - Typical Gate Charge vs.  
Collector-to-Emitter Voltage  
Gate-to-Emitter Voltage  
1.5  
1.0  
0.5  
0.0  
10  
V
V
T
= 480V  
= 15V  
CC  
GE  
R
= 5.0Ω  
= 15V  
G
V
GE  
= 25°C  
J
V
= 480V  
CC  
I
= 25A  
C
I
= 50A  
C
E
OFF  
I
= 25A  
C
1
E
ON  
I
= 12.5A  
C
0.1  
20  
40  
60  
80  
100  
120  
140  
160  
0
10  
20  
30  
40  
50  
60  
T , Junction Temperature (°C)  
R
, Gate Resistance (  
)
Ω
J
G
Fig. 10 - Typical Switching Losses vs.  
Fig. 9 - Typical Switching Losses vs. Gate  
Junction Temperature  
Resistance  
Document Number: 93911  
www.vishay.com  
5
25MT060WFA  
Bulletin I27195 06/06  
2.0  
1000  
100  
10  
V
T
= 20V  
GE  
= 125°  
R
= 5.0Ω  
G
TJ = 25°C  
J
E
V
= 15V  
OFF  
GE  
CC  
V
= 480V  
1.5  
1.0  
0.5  
0.0  
E
ON  
SAFE OPERATING AREA  
1
0
10  
I
20  
30  
40  
50  
60  
1
10  
100  
1000  
Collector Current (A)  
V
, Collector-to-Emitter Voltage (V)  
C,  
CE  
Fig. 11 - Typical Switching Losses vs.  
Fig. 12 - Turn-Off SOA  
Collector-to-Emitter Current  
100  
10  
1
T
= 150°C  
= 125°C  
= 25°C  
J
T
T
J
J
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
Forward Voltage Drop - V ( V )  
F
Fig. 13 - Maximum Forward Voltage Drop vs.  
Instantaneous Forward Current  
Document Number: 93911  
www.vishay.com  
6
25MT060WFA  
Bulletin I27195 06/06  
30  
25  
20  
15  
10  
5
140  
120  
100  
80  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
I
I
= 50A  
= 25A  
= 10A  
F
F
I
F
60  
40  
A
A
20  
0
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 15 - Typical Recovery Current vs. dif/dt  
Fig. 14 - Typical Reverse Recovery vs. dif/dt  
10000  
1000  
100  
1400  
1200  
1000  
800  
600  
400  
200  
0
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
I
I
I
= 50A  
= 25A  
= 10A  
F
F
F
A
A
100  
1000  
100  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 16 - Typical Stored Charge vs. dif/dt  
Fig. 17 - Typical di(rec)M/dt vs. dif/dt  
Document Number: 93911  
www.vishay.com  
7
25MT060WFA  
Bulletin I27195 06/06  
Outline Table  
Dimensions in millimeters  
Document Number: 93911  
www.vishay.com  
8
25MT060WFA  
Bulletin I27195 06/06  
Ordering Information Table  
Device Code  
25 MT 060  
W
F
A
1
2
3
4
5
6
1
2
3
4
5
6
-
-
-
-
-
-
Current rating  
(25 = 25A)  
Essential Part Number  
Voltage code  
(060 = 600V)  
(W = Warp® IGBT)  
Speed/ Type  
Circuit Configuration (F = Full Bridge)  
A = Al2O3 DBC Substrate  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial Level.  
Qualification Standards can be found on IR's Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7309  
06/06  
Document Number: 93911  
www.vishay.com  
9
Legal Disclaimer Notice  
Vishay  
Notice  
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of  
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the  
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or  
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®  
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product  
names noted herein may be trademarks of their respective owners.  
Document Number: 99901  
Revision: 12-Mar-07  
www.vishay.com  
1