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HL1569AF  
1.55 µm Laser Diode with EA Modulator  
ADE-208-834A (Z)  
2nd Edition  
Dec. 2000  
Description  
The HL1569AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-quantum  
well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is  
suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps  
external modulation systems for up to 600 km.  
Features  
Long wavelength output: λp = 1550 nm Typ  
High extinction ratio: 15 dB Min at VR(EA) = –2 V  
Fast pulse response: tr/tf 80 ps  
Dynamic single longitudinal mode: Sr = 40 dB Typ  
Package: open air package (chip on carrier) with micro strip-line  
Package Type  
Internal Circuit  
HL1569AF: AF  
2
3
50Ω  
LD  
Modulator  
1
HL1569AF  
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Symbol  
Value  
Unit  
mA  
V
LD forward current  
IF  
100  
Laser diode reverse voltage  
Modulator reverse voltage  
Operating temperature  
Storage temperature *  
Note: without condensation  
VR(LD)  
VR(EA)  
Topr  
Tstg  
2
5
V
+10 to +40  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Symbol Min  
Typ  
Max  
20  
Unit  
mA  
mW  
dB  
Test Conditions  
Threshold current  
Optical output power  
Extinction ratio  
Lasing wavelength  
Ith  
PO  
10  
4
IF(LD) = 60 mA, VR(EA) = 0 V  
IF(LD) = 60 mA, VR(EA) = 0/–2 V  
2.5 Gbps (NRZ)  
ER  
λp  
15  
1530  
30  
1550  
40  
1570  
nm  
Side-mode suppression ratio Sr  
dB  
2.5 Gbps (NRZ)  
Beam divergence  
θ//  
30  
deg.  
PO = 4 mW, FWHM  
parallel to the junction  
Beam divergence  
θ
40  
deg.  
PO = 4 mW, FWHM  
parpendicular to the junction  
Rise time  
tr  
4
80  
80  
ps  
2.5 Gbps (NRZ)  
Fall time  
tf  
ps  
2.5 Gbps (NRZ)  
Cutoff frequency  
RF return loss  
S21  
S11  
GHz  
dB  
IF(LD) = 60 mA, VR(EA) = –1 V  
10  
IF(LD) = 60 mA, VR(EA) = –1 V,  
f 3 GHz  
Rev.2, Dec. 2000, page 2 of 7  
HL1569AF  
Typical Characteristic Curves  
Optical Output Power vs. Forward Current  
Threshold Current vs. Case Temperature  
100  
10  
TC = 25°C  
R(EA) = 0  
V
8
6
10  
4
2
0
1
40  
60  
80  
100  
40  
60  
0
20  
0
20  
Forward current, IF (mA)  
Case temperature, TC (°C)  
Far Field Pattern  
Parallel  
Perpendicular  
TC = 25°C  
PO = 4 mW  
R(EA) = 0  
T
C = 25°C  
PO = 4 mW  
R(EA) = 0  
V
V
40 20  
0
20  
40  
40 20  
0
20  
40  
Angle, θ (deg.)  
Rev.2, Dec. 2000, page 3 of 7  
HL1569AF  
Typical Characteristic Curves (cont)  
Extinction Ratio vs. Modulator Reverse Voltage  
Bit Error Rate vs. Received Power  
104  
0
2.48832 Gbps (NRZ)  
IF(LD) = 60 mA  
IF(LD) = 60 mA  
TC = 25°C  
VR(EA) = 1.2 V  
10  
VP = 2 VP-P  
PRBS = 2231  
106  
108  
20  
30  
40  
no fiber  
600 km fiber  
1010  
1012  
2
3
4
40  
36  
32  
28  
24  
20  
0
1
Modulator reverse voltage, VR(EA) (V)  
Received power (dBm)  
Rev.2, Dec. 2000, page 4 of 7  
HL1569AF  
Package Dimensions  
As of January, 2001  
Unit: mm  
1 ± 0.2  
2
1
3
Area A  
φ
2 2.3 ± 0.2  
3 ± 0.2  
6 ± 0.2  
Pm  
Po  
Enlargement of Area A  
Hitachi Code  
JEDEC  
EIAJ  
LD/AF  
1.1 g  
Mass (reference value)  
Rev.2, Dec. 2000, page 5 of 7  
HL1569AF  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly.  
The laser beam shall be observed or adjusted through infrared camera or equivalent.  
Rev.2, Dec. 2000, page 6 of 7  
HL1569AF  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive Whitebrook Park  
Hitachi Europe Ltd.  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower  
San Jose,CA 95134  
Lower Cookham Road  
World Finance Centre,  
Tel: <1> (408) 433-1990 Maidenhead  
Fax: <1>(408) 433-0223 Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://semiconductor.hitachi.com.hk  
Fax: <44> (1628) 585200  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road  
Hung-Kuo Building  
Hitachi Europe GmbH  
Electronic Components Group  
Dornacher Straße 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Taipei (105), Taiwan  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.  
Colophon 4.0  
Rev.2, Dec. 2000, page 7 of 7