JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
2SA673 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
Low Frequency Amplifier
Complementary Pair with 2SC1213
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-35
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-35
V
-4
V
Collector Current
-0.5
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
400
mW
℃/W
℃
RθJA
Tj
312
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-35
-35
-4
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-0.01mA,IE=0
IC=-1mA,IB=0
V
IE=-0.01mA,IC=0
VCB=-20V,IE=0
V
-0.5
-0.5
320
μA
μA
Emitter cut-off current
IEBO
VEB=-3V,IC=0
hFE(1)
VCE=-3V, IC=-10mA
VCE=-3V, IC=-500mA
IC=-150mA,IB=-15mA
VCE=-3V, IC=-10mA
60
10
DC current gain
*
hFE(2)
*
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
-0.6
V
V
-0.75
VBE
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF hFE(1)
B
C
D
RANK
60-120
100-200
160-320
RANGE
A,Dec,2010
