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1N4001 thru 1N4007  
Vishay Semiconductors  
formerly General Semiconductor  
General Purpose Plastic Rectifier  
Reverse Voltage  
50 to 1000V  
Forward Current 1.0A  
DO-204AL  
(DO-41)  
Features  
1.0 (25.4)  
MIN.  
• Plastic package has Underwriters Laboratories  
Flammability Classification 94V-0  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
• Construction utilizes void-free molded plastic technique  
• Low reverse leakage  
• High forward surge capability  
0.205 (5.2)  
0.160 (4.1)  
• High temperature soldering guaranteed: 350°C/10 seconds,  
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension  
Mechanical Data  
Case: JEDEC DO-204AL, molded plastic body  
1.0 (25.4)  
MIN.  
Terminals: Plated axial leads, solderable per  
MIL-STD-750, Method 2026  
0.034 (0.86)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
0.028 (0.71)  
DIA.  
Weight: 0.012 oz., 0.3 g  
0.026 (0.66)  
0.023 (0.58)  
NOTE: Lead diameter is  
for suffix "E" part numbers  
Dimensions in inches and (millimeters)  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Parameter  
Symb.  
Unit  
4001 4002 4003 4004 4005 4006 4007  
Maximum repetitive peak reverse voltage  
* Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
* Maximum DC blocking voltage  
100  
* Maximum average forward rectified current  
0.375" (9.5mm) lead length at TA = 75°C  
IF(AV)  
IFSM  
1.0  
30  
30  
A
A
* Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method) TA = 75°C  
* Maximum full load reverse current, full cycle  
average 0.375" (9.5mm) lead length TL = 75°C  
IR(AV)  
µA  
RθJA  
RθJL  
50  
25  
Typical thermal resistance(1)  
°C/W  
* Maximum DC blocking voltage temperature  
TA  
+150  
V
* Operating junction and storage temperature range  
TJ, TSTG  
–50 to +175  
°C  
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Maximum instantaneous forward voltage at 1.0A  
VF  
1.1  
V
* Maximum DC reverse current  
at rated DC blocking voltage  
TA = 25°C  
TA = 125°C  
5.0  
50  
IR  
µA  
pF  
Typical junction capacitance at 4.0V, 1MHz  
CJ  
15  
Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted  
*JEDEC registered values  
Document Number 88503  
13-Jan-03  
www.vishay.com  
1
1N4001 thru 1N4007  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 2 – Maximum Non-Repetitive  
Peak Forward Surge Current  
Fig. 1 – Forward Current Derating Curve  
30  
25  
20  
15  
10  
5.0  
1.0  
TA = 75°C  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
60HZ Resistive or  
Inductive Load  
0.8  
0.2 x 0.2" (5.0 x 5.0mm)  
Copper Pads  
0.6  
0.4  
0.2  
0.375" (9.5mm)  
Lead Length  
0
1
10  
100  
0
25  
50  
75  
100  
125  
150  
175  
Ambient Temperature (°C)  
Number of Cycles at 60H  
Z
Fig. 3 – Typical Instantaneous  
Forward Characteristics  
Fig. 4 –Typical Reverse Characteristics  
1,000  
100  
10  
20  
10  
TJ = 150°C  
TJ = 25°C  
Pulse Width = 300µs  
1% Duty Cycle  
1
TJ = 100°C  
TJ = 25°C  
1
0.1  
0.1  
0.01  
0.01  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
0
20  
40  
60  
80  
100  
Percentage of Peak Reverse Voltage (%)  
Instantaneous Forward Voltage (V)  
Fig. 6 – Typical Transient Thermal  
Impedance  
Fig. 5 – Typical Junction Capacitance  
100  
100  
10  
1
TJ = 25°C  
f = 1.0MHZ  
Vsig = 50mVp-p  
10  
1
0.1  
0.1  
0.01  
1
10  
100  
0.1  
1
10  
100  
Reverse Voltage (V)  
t -- Pulse Duration (sec)  
www.vishay.com  
2
Document Number 88503  
13-Jan-03