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HL6315G/16G  
AlGaInP Laser Diodes  
ADE-208-218D (Z)  
5th Edition  
Dec. 2000  
Description  
The HL6315G/16G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.  
They are suitable as light sources for laser poiters and optical equipment.  
Application  
Laser pointer  
Features  
Visible light output: 635 nm Typ (nearly equal to He-Ne gas laser)  
Optical output power: 3 mW CW  
Low operating current: 30 mA Typ  
Low operating voltage: 2.7 V Max  
TM mode oscillation  
Package Type  
HL6315G/16G: G2  
Internal Circuit  
HL6315G  
Internal Circuit  
HL6316G  
1
3
1
3
PD  
LD  
PD  
LD  
2
2
HL6315G/16G  
Absolute Maximum Ratings (TC = 25°C)  
Item  
Symbol  
PO  
Rated Value  
Unit  
mW  
mW  
V
Optical output power  
Pulse optical output power  
LD reverse voltage  
PD reverse voltage  
Operating temperature  
Storage temperature  
3
PO(pulse)  
VR(LD)  
VR(PD)  
Topr  
5 *  
2
30  
V
–10 to +50  
–40 to +85  
°C  
Tstg  
°C  
Note: Pulse condition : Pulse width 1 µs , duty 50%  
Optical and Electrical Characteristics (TC = 25°C)  
Item  
Symbol Min  
Typ  
25  
30  
8
Max  
Unit  
mW  
mA  
mA  
V
Test Conditions  
Optical output power  
Threshold current  
Operating current  
Operating voltage  
PO  
Ith  
IOP  
VOP  
θ//  
3
Kink free  
6
35  
42  
PO = 3 mW  
PO = 3 mW  
PO = 3 mW  
2.7  
10  
Beam divergence  
deg.  
parallel to the junction  
Beam divergence  
θ
23  
30  
39  
deg.  
PO = 3 mW  
parpendicular to the junction  
Lasing wavelength  
Monitor current  
λp  
630  
0.1  
635  
0.3  
640  
0.6  
nm  
mA  
PO = 3 mW  
IS  
PO = 3 mW, VR(PD) = 5 V  
2
HL6315G/16G  
Typical Characteristic Curves  
Monitor Current vs. Optical Output Power  
Optical Output Power vs. Forward Current  
3
0.4  
0.3  
TC = 25°C  
VR(PD) = 5 V  
TC = 10°C  
TC = 25°C  
2
TC = 50°C  
0.2  
0.1  
0
1
0
0
20  
40  
60  
80  
100  
0
1
2
3
Forward current, IF (mA)  
Optical output power, PO (mW)  
Lasing Spectrum  
TC = 25°C  
Far Field Pattern  
Perpendicular  
PO = 3 mW  
1
0.8  
0.6  
0.4  
0.2  
0
TC = 25°C  
PO = 3 mW  
PO = 2 mW  
Parallel  
P
O = 1 mW  
40  
20  
0
20  
40  
Angle, θ (deg.)  
625  
630  
635  
640  
645  
650  
Wavelength, λp (nm)  
3
HL6315G/16G  
Typical Characteristic Curves (cont)  
Threshold Current vs. Case Temperature  
100  
Slope Efficiency vs. Case Temperature  
1.0  
0.8  
0.6  
0.4  
0.2  
0
10  
10  
0
10  
20  
30  
40  
50  
10  
0
10  
20  
30  
40  
50  
Case temperature, TC (°C)  
Case temperature, TC (°C)  
Monitor Current vs. Case Temprature  
PO = 3 mW  
Lasing Wavelength vs. Case Temperature  
644  
0.4  
0.3  
0.2  
PO = 3 mW  
642  
640  
638  
636  
VR(PD) = 5 V  
634  
632  
0.1  
0
630  
628  
10  
0
10  
20  
30  
40  
50  
10  
0
10  
20  
30  
40  
50  
Case temperature, TC (°C)  
Case temperature, TC (°C)  
4
HL6315G/16G  
Typical Characteristic Curves (cont)  
Polarization Ratio vs. Optical Output Power  
Astigmatism vs. Optical Output Power  
500  
20  
TC = 25°C  
TC = 25°C  
NA = 0.55  
15  
400  
300  
200  
100  
0
NA = 0.4  
NA = 0.25  
10  
5
0
0
1
2
3
0
1
2
3
Optical output power, PO (mW)  
Optical output power, PO (mW)  
5
HL6315G/16G  
Package Dimensions  
Unit: mm  
+0  
φ
9.0 –0.025  
1.0 ± 0.1  
(0.65)  
+0.3  
φ
7.2 –0.2  
φ
6.2 ± 0.2  
( 2.0)  
φ
Emitting Point  
φ
3 – 0.45 ± 0.1  
1
2
3
3
1
2
φ
2.54 ± 0.35  
Hitachi Code  
JEDEC  
LD/G2  
EIAJ  
Mass (reference value)  
1.1 g  
6
HL6315G/16G  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The  
laser beam shall be observed or adjusted through infrared camera or equivalent.  
7
HL6315G/16G  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
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