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2SA673, 2SA673A  
Silicon PNP Epitaxial  
ADE-208-125 (Z)  
1st. Edition  
Mar. 2001  
Application  
•
•
Low frequency amplifier  
Complementary pair with 2SC1213 and 2SC1213A  
Outline  
TO-92 (1)  
1. Emitter  
2. Collector  
3. Base  
3
2
1
2SA673, 2SA673A  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SA673  
–35  
2SA673A  
–50  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
–35  
–50  
V
–4  
–4  
V
–500  
400  
–500  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
400  
Tj  
150  
150  
Tstg  
–55 to +150  
–55 to +150  
Electrical Characteristics (Ta = 25°C)  
2SA673  
2SA673A  
Item  
Symbol Min Typ Max Min Typ Max Unit Test conditions  
Collector to base  
breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
–35  
–35  
–4  
—
—
—
—
—
–50  
–50  
–4  
—
—
—
—
—
—
—
V
V
V
IC = –10 µA, IE = 0  
IC = –1 mA, RBE = ∞  
IE = –10 µA, IC = 0  
VCB = –20 V, IE = 0  
Collector to emitter  
breakdown voltage  
—
Emitter to base  
breakdown voltage  
—
Collector cutoff current ICBO  
—
—
–0.5  
—
—
–0.5 µA  
Collector to emitter  
saturation voltage  
VCE(sat)  
–0.2 –0.6  
–0.2 –0.6  
V
IC = –150 mA,  
IB = –15 mA*2  
DC current trnsfer ratio hFE*1  
DC current trnsfer ratio hFE  
Base to emitter voltage VBE  
60  
10  
—
—
—
320  
—
60  
10  
—
—
—
320  
—
VCE = –3 V,  
IC = –10 mA  
VCE = –3 V,  
IC = –500 mA*2  
–0.64 —  
–0.64 —  
V
VCE = –3 V,  
IC =–10 mA  
Notes: 1. The 2SA673 and 2SA673A are grouped by hFE as follows.  
2. Pulse test  
B
C
D
60 to 120  
100 to 200 160 to 320  
2