2SA673A(K)C--Datasheet/数据表在线中文翻译

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2SA673A(K)

Silicon PNP Epitaxial

ADE-208-313A (Z)

2nd. Edition

Mar. 2001

Application

•

Low frequency amplifier

Medium speed switching

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

2SA673A(K)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

–50

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–50

–4

–0.5

Collector power dissipation

Junction temperature

Storage temperature

P_C

0.4

°C

150

Tstg

–55 to +150

2SA673A(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

–50

–4

—

I_C= –10 µA, I_E= 0

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

Emitter to base breakdown

voltage

V_(BR)EBO

Collector cutoff current

Emitter cutoff current

Base to emitter voltage

I_CBO

I_EBO

V_BE

—

–0.5

—

µA

V_CE= –20 V, I_E= 0

—

V_EB= –3 V, I_C= 0

–0.64

–0.2

V_CE= –3 V, I_C= –10 mA

I_C= –150 mA, I_B= –15 mA*²

Collector to emitter saturation V_CE(sat)

voltage

–0.6

Base to emitter saturation

voltage

V_BE(sat)

—

–0.87

—

I_C= –150 mA, I_B= –15 mA*²

DC current transfer ratio

h_FE*¹

h_FE

f_T

—

320

—

V_CE= –3 V, I_C= –10 mA

V_CE= –3 V, I_C= –500 mA*²

V_CE= –3 V, I_C= –10 mA

V_CC= –10.3 V

—

Gain bandwidth product

Turn on time

120

0.3

0.6

0.4

—

MHz

µs

t_on

—

Turn off time

t_off

—

µs

I_C= 10 I_B1= –10 I_B2= –10 mA

Storage time

t_stg

—

µs

V_CC= –5 V,

I_C= I_B1= I_B2= –20 mA

Notes: 1. The 2SA673A(K) is grouped by h_FEas follows.

2. Pulse test

60 to 120

100 to 200 160 to 320

See 2SA673A except for the above – mentioned characteristic curves.

2SA673A(K)

Switching Time Test Circuit

t_on, t_offTest Circuit

Switching Time Test Circuit

_stgTest Circuit

D.U.T.

1.0 215

CRT

D.U.T.

6 k

1 k

240

6 k

100

200

0.002

+ –

P.G.

tr ≤ 5 ns

PW ≥ 5 µs

– +

tr, tf ≤ 15 ns

PW ≥ 5 µs

duty ratio ≤ 10%

+ –

6 V

–10.3 V

Unit R : Q

C : µF

–7 V

–5 V

duty ratio ≤ 2%

Unit R : Q

C : µF

Response Waveform

10%

Response Waveform

9 V

Input

90%

10%

–13 V

10%

t_stg

10%

t_on

Output

90%

t_off

2SA673A(K)

Collector to Emitter Saturation

Voltage vs. Collector Current

Maximum Collector Dissipation Curve

–0.7

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

600

400

200

I_C= 10 I_B

–0.1 –0.2 –0.5 –1.0 –2

–5 –10 –20 –50 –100 –200 –500

100

150

Collector Current I_C(mA)

Ambient Temperature Ta (°C)

Input and Output Capacitance

vs. voltage

Base to Emitter Saturation Voltage vs.

Collector Current

–1.1

–1.0

–0.9

–0.8

–0.7

–0.6

–0.5

–0.4

f = 1 MHz

I_C= 10 I_B

C_ib(I_C= 0)

C_ob(I_E= 0)

–0.1

–0.3

–1.0

–3

–10

–30

–0.1 –0.2 –0.5 –1.0 –2

–5 –10 –20 –50 –100 –200 –500

Collector to Base Voltage V_CB(V)

Emitter to Base Voltage V_EB(V)

Collector Current I_C(mA)

2SA673A(K)

Switcing Time vs. Collector Current

1,000

500

V_CC= –10.3 V

I_C= 10 I_B1= –10 I_B2

t_off

t_stg

200

100

t_on

t_d

–5 –10 –20

–50 –100 –200 –500

Collector Current I_C(mA)

2SA673A(K)

Package Dimensions

As of January, 2001

Unit: mm

4.8 ± 0.4

3.8 ± 0.4

0.60 Max

0.55Max

0.5Max

1.27

2.54

Hitachi Code

JEDEC

EIAJ

TO-92 (1)

Conforms

0.25 g

Mass (reference value)

2SA673A(K)

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

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For further information write to:

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(Taipei Branch Office)

4/F, No. 167, Tun Hwa North Road,

Hung-Kuo Building,

Taipei (105), Taiwan

Berkshire SL6 8YA, United Kingdom

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Tel : <886>-(2)-2718-3666

Fax : <886>-(2)-2718-8180

Telex : 23222 HAS-TP

URL : http://www.hitachi.com.tw

Colophon 2.0