5962F0052101QXC--Datasheet/数据表在线中文翻译

REVISIONS

LTR

A

DESCRIPTION

DATE (YR-MO-DA)

00-08-21

APPROVED

R. MONNIN

Make changes to t , T , V

, t , T tests and switch footnotes 2 and 3

T1 DP PAUX T2 DA

as specified under table I. - ro

B

00-09-20

R. MONNIN

Make changes to SEP as specified under 1.5 and I , t , t_T2tests as

CCS T1

specified in table I. – ro

C

D

Make correction to PWR pin description as specified in figure 1. - ro

Make changes to UV- in table I, added footnote to 1.5 and table I. - gt

01-12-14

03-06-19

R. MONNIN

REV

SHEET

REV

D

21

D

22

D

SHEET

15

16

17

18

19

20

REV STATUS

OF SHEETS

PMIC N/A

REV

D

3

D

4

D

5

D

6

D

7

D

8

D

9

D

SHEET

1

2

10

11

12

13

14

PREPARED BY

RICK OFFICER

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

CHECKED BY

RAJESH PITHADIA

STANDARD

MICROCIRCUIT

DRAWING

http://www.dscc.dla.mil

APPROVED BY

RAYMOND MONNIN

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

MICROCIRCUIT, DIGITAL-LINEAR, RADIATION

HARDENED, COMPLEMENTARY SWITCH FET

DRIVER, MONOLITHIC SILICON

DRAWING APPROVAL DATE

00-07-26

AMSC N/A

REVISION LEVEL

D

SIZE

A

CAGE CODE

5962-00521

67268

SHEET

1

OF

22

DSCC FORM 2233

APR 97

5962-E446-03

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

1. SCOPE

1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and

M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case

outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of

Radiation Hardness Assurance (RHA) levels are reflected in the PIN. For device class T, the user is encouraged to review the

manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended

application.

1.2 PIN. The PIN is as shown in the following example:

5962

F

00521

01

V

X

C

Federal

stock class

designator

\

RHA

designator

(see 1.2.1)

Device

type

(see 1.2.2)

Device

class

designator

(see 1.2.3)

Case

outline

(see 1.2.4)

Lead

finish

(see 1.2.5)

/

\/

Drawing number

1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and

are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A

specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

1.2.2 Device type(s). The device type(s) identify the circuit function as follows:

Device type

01

Generic number

IS-1715ARH

Circuit function

Radiation hardened, complementary switch

field effect transistor (FET) driver

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as

follows:

Device class

M

Device requirements documentation

Vendor self-certification to the requirements for MIL-STD-883 compliant,

non-JAN class level B microcircuits in accordance with MIL-PRF-38535,

appendix A

Q, V

T

Certification and qualification to MIL-PRF-38535

Certification and qualification to MIL-PRF-38535 with performance as specified

in the device manufacturers approved quality management plan.

1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter

X

Descriptive designator

CDFP4-F16

Terminals

16

Package style

Flat pack

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535,

appendix A for device class M.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

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REVISION LEVEL

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D

2

DSCC FORM 2234

APR 97

1.3 Absolute maximum ratings. 1/

Supply voltage range (V ) ..............................................................10 V dc to 20 V dc

CC

DC input voltage range (V ) ............................................................0 V to V

IN

CC

Junction temperature (T ) .................................................................+175°C

J

Storage temperature range ..............................................................-65°C to +150°C

Lead temperature (soldering, 10 seconds) .......................................+265°C

Thermal resistance, junction-to-case (θ ) .......................................18°C/W

JC

Thermal resistance, junction-to-ambient (θ ) ..................................90°C/W

JA

1.4 Recommended operating conditions.

Supply voltage range (V ) ..............................................................10 V dc to 18 V dc

CC

Ambient operating temperature range (T ) ......................................-55°C to +125°C

A

1.5 Radiation features

2

SEP effective let number upsets .......................................................> 90 MeV/(cm /mg)

Maximum total dose available (dose rate = 50 – 300 rads(Si) / s): 2/

5

Device classes M, Q, or V .............................................................3 x 10 Rads

5

Device class T ...............................................................................1 x 10 Rads

Dose rate latch-up ............................................................................None 3/

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in

the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883

-

Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

_____

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.

Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in

MIL-STD-883, method 1019, condition A.

3/ Guaranteed by design or process but not tested.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

3

DSCC FORM 2234

APR 97

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.

3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the

full ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as

required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535,

appendix A.

3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a

QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a

certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-

HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q, T and V, the requirements of

MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

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REVISION LEVEL

SHEET

D

4

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics.

Conditions 1/

-55°C ≤ T ≤+125°C

Group A

subgroups

Device

type

Limits

Unit

A

Test

Symbol

V

CC

= 10 V to 18 V

Min

Max

ENBL ≥ 3 V

unless otherwise specified

M,D,P,L,R,F 2/

OVERALL section

Operating voltage range

1,2,3

1

01

10

18

V

CC

Input current, nominal

1,2,3

1

1.0

300

8.5

7.7

0

6.0

900

9.5

8.8

2.0

mA

I

CC

M,D,P,L,R,F 2/

ENBLE = 0.8 V

Input current, sleep mode

1,2,3

1

µA

V

CCS

M,D,P,L,R,F 2/

Under voltage, rising

threshold

UV+

UV-

1,2,3

1

M,D,P,L,R,F 2/

Under voltage, falling

threshold

1,2,3

1

V

Under voltage delta

UVD

1,2,3

1

V

0

Power driver (PWR) section

Pre turn-on PWR output,

low

1,2,3

01

2.0

V

= 0 V, ENBL ≤ 0.8 V,

PPWR

CC

I

= 10 mA

OUT

M,D,P,L,R,F 2/

1

2.0

1.0

PWR pin output low,

saturation

INPUT = 0.8 V,

= 40 mA

1,2,3

PWR

I

OUT

M,D,P,L,R,F 2/

1

1.0

1.5

INPUT = 0.8 V,

= 100 mA

1,2,3

I

OUT

M,D,P,L,R,F 2/

1

1.5

See footnotes at end of table.

SIZE

STANDARD

MICROCIRCUIT DRAWING

5962-00521

A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

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D

5

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/

-55°C ≤ T ≤+125°C

Group A

subgroups

Device

type

Limits

Unit

A

Test

Symbol

V

CC

= 10 V to 18 V

Min

Max

ENBL ≥ 3 V

unless otherwise specified

Power driver (PWR) section – continued.

PWR pin output high,

INPUT = 3.0 V,

1,2,3

01

1.0

V

-

CC

saturation

I

= -40 mA

OUT

PWR

M,D,P,L,R,F 2/

1

1.0

1.5

INPUT = 3.0 V,

= -100 mA

1,2,3

I

OUT

M,D,P,L,R,F 2/

1

1.5

50

Rise time

Fall time

9,10,11

9

01

15

45

ns

T

C = 2200 pF

RP

L

M,D,P,L,R,F 2/

C = 2200 pF

50

9,10,11

9

50

FP

L

M,D,P,L,R,F 2/

50

T1 input pin delay,

AUX to PWR

INPUT rising edge, 3/

= 10 kΩ

9,10,11

200

t

T1

R

T1

M,D,P,L,R,F 2/

9

45

200

INPUT rising edge, 3/

= 100 kΩ

9,10,11

250

1300

R

T1

M,D,P,L,R,F 2/

9

250

50

1300

300

PWR propagation

delay

INPUT falling edge at 4/

50 % points

9,10,11

01

ns

T

DP

M,D,P,L,R,F 2/

9

50

300

See footnotes at end of table.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

6

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/

-55°C ≤ T ≤+125°C

Group A

subgroups

Device

type

Limits

Unit

A

Test

Symbol

V

CC

= 10 V to 18 V

Min

Max

ENBL ≥ 3 V

unless otherwise specified

Auxiliary (AUX) section.

AUX pre turn-on AUX

output, low

1,2,3

01

2.0

V

= 0 V, ENBL ≤ 0.8 V,

PAUX

CC

I

= 10 mA

OUT

M,D,P,L,R,F 2/

1

2.0

1.0

AUX pin output low,

saturation

INPUT = 3.0 V,

= 40 mA

1,2,3

AUX

I

OUT

M,D,P,L,R,F 2/

1

1.0

1.5

INPUT = 3.0 V,

= 100 mA

1,2,3

I

OUT

M,D,P,L,R,F 2/

1

1.5

1.0

AUX pin output low,

saturation

INPUT = 0.8 V,

= -40 mA

1,2,3

01

V

-

CC

I

OUT

AUX

M,D,P,L,R,F 2/

1

1.0

1.5

INPUT = 0.8 V,

= -100 mA

1,2,3

I

OUT

M,D,P,L,R,F 2/

1

1.5

50

Rise time

Fall time

9,10,11

9

01

15

50

ns

T

C = 2200 pF

RP

L

M,D,P,L,R,F 2/

C = 2200 pF

50

9,10,11

9

50

FP

L

M,D,P,L,R,F 2/

50

T2 input pin delay,

PWR to AUX

INPUT rising edge, 3/

= 10 kΩ

9,10,11

130

t

T2

R

T2

M,D,P,L,R,F 2/

9

50

130

700

INPUT rising edge, 3/

= 100 kΩ

9,10,11

200

R

T2

M,D,P,L,R,F 2/

9

200

50

700

185

AUX propagation

delay

INPUT falling edge at 4/

50 % points

9,10,11

01

ns

T

DA

M,D,P,L,R,F 2/

9

50

185

See footnotes at end of table.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

7

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/

-55°C ≤ T ≤+125°C

Group A

subgroups

Device

type

Limits

Unit

A

Test

Symbol

V

CC

= 10 V to 18 V

Min

Max

ENBL ≥ 3 V

unless otherwise specified

ENABLE section

Input threshold voltage

1,2,3

1

01

2.8

10

15

V

IT

M,D,P,L,R,F 2/

ENABLE pin = 15 V

M,D,P,L,R,F 2/

Input current high

Input current low

1,2,3

1

-10

-15

µA

I

IH

ENABLE pin = 0 V

M,D,P,L,R,F 2/

1,2,3

1

IL

T1 input section

Current limit

T1 input = 0 V

M,D,P,L,R,F 2/

1,2,3

01

-5.5

2.7

25

-1.6

3.3

mA

V

T

1CL

T

1NV

T

1DM

1

1,2,3

1

Nominal voltage at T1 pin

Minimum T1 pin delay

M,D,P,L,R,F 2/

T1 pin = 2.5 V 4/

3.3

9,10,11

9

120

ns

M,D,P,L,R,F 2/

25

T2 input section

Current limit

T2 input = 0 V

M,D,P,L,R,F 2/

1,2,3

01

-5.5

2.7

20

-2.1

3.3

80

mA

V

T

2CL

T

2NV

T

2DM

1

1,2,3

1

Nominal voltage at T2 pin

Minimum T2 pin delay

M,D,P,L,R,F 2/

T2 pin = 2.5 V 4/

9,10,11

9

ns

M,D,P,L,R,F 2/

20

80

See footnotes at end of table.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

8

DSCC FORM 2234

APR 97

TABLE I. Electrical performance characteristics – Continued.

Conditions 1/

-55°C ≤ T ≤+125°C

Group A

subgroups

Device

type

Limits

Unit

A

Test

Symbol

V

CC

= 10 V to 18 V

Min

Max

ENBL ≥ 3 V

unless otherwise specified

INPUT section

Input threshold voltage

Input current high

Input current low

1,2,3

1

01

2.8

10

20

V

IT

M,D,P,L,R,F 2/

INPUT = 15 V

1,2,3

1

-10

-20

µA

I

IH

M,D,P,L,R,F 2/

INPUT = 0 V

1,2,3

1

IL

M,D,P,L,R,F 2/

1/ Devices supplied to this drawing have been characterized through all levels M, D, P, L, R, F of irradiation

(classes M, Q, and V) and levels M, D, P, L, R for class T. However, this device (classes M, Q, and V) is only tested at

the F level and class T is only tested at the R level. Pre and Post irradiation values are identical unless otherwise

specified in Table I. When performing post irradiation electrical measurements for any RHA level, T = +25°C

A

(see 1.5 herein).

2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.

Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in

MIL-STD-883, method 1019, condition A.

3/ T1 and T2 delay is defined as the time between the 50 % transition point of AUX (PWR) and the 50 % transition point of

PWR (AUX) with no capacitive load on either output.

4/ Propagation delays are measured from the 50 % point of the input signal to the 50 % point of the output signal’s transition

with no load on outputs.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 or

for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.

3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2

herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.

3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain

the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made

available onshore at the option of the reviewer.

3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

microcircuit group number 53 (see MIL-PRF-38535, appendix A).

SIZE

STANDARD

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MICROCIRCUIT DRAWING

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REVISION LEVEL

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DSCC FORM 2234

APR 97

Device type

Case outline

01

X

Terminal symbol

NC

Terminal

number

1

2

3

V

CC

PWR

GND

AUX

NC

4

5

6

7

8

NC

9

NC

10

11

12

13

14

15

16

V

CC

T2

GND

INPUT

T1

ENABLE

FIGURE 1. Terminal connections.

SIZE

STANDARD

MICROCIRCUIT DRAWING

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DEFENSE SUPPLY CENTER COLUMBUS

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DSCC FORM 2234

APR 97

Symbol

NC

Description

No connection

Chip positive supply (10 V – 20 V)

V

CC

PWR

Output. PWR switches immediately (neglecting propagation delay)

at INPUT’s falling edge but is delayed after the rising edge by the

value of the resistance on T1. PWR is capable of sinking and

sourcing 3.0 A of peak gate drive current. During sleep mode, PWR

is active low.

GND

AUX

Chip negative supply.

Output. AUX switches immediately (neglecting propagation delay) at

INPUT’s rising edge but is delayed after the falling edge before

switching by the value of the resistance on T2. AUX is capable is

sinking and sourcing 3.0 A of peak gate drive current. During sleep

mode, AUX is active low.

NC

No connection

Chip supply (10 V – 20 V)

V

CC

T2

Input. A resistor to ground programs the time delay between PWR

switch turn-off and AUX turn-on.

GND

Chip negative supply.

INPUT

Input. INPUT switches at TTL logic levels but the allowable range is

from 0 V to V

allowing direct connection to most common IN PWR

CC

controller outputs. The rising edge immediately switches the AUX

output, and initiates a timing delay, T1, before switching on the PWR

output. Similarly, the INPUT falling edge immediately turns off the

PWR output and initiates a timing delay, T2, before switching the

AUX output.

T1

Input. A resistor to ground programs the time delay between AUX

switch turn-off and PWR turn-on.

ENABLE

Input. The ENABLE input switches at TTL logic levels, but the

allowable range is from 0 to V . The ENABLE input will place the

CC

device into sleep mode when it is a logic low. The current into V

CC

during the sleep mode is typically 500 µA.

FIGURE 1. Terminal connections – Continued.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

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DSCC FORM 2234

APR 97

NOTES: V

= 20 V ±5 % and R = 10 kΩ

CC

1

FIGURE 2. Radiation exposure circuit.

SIZE

STANDARD

MICROCIRCUIT DRAWING

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DEFENSE SUPPLY CENTER COLUMBUS

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APR 97

4. QUALITY ASSURANCE PROVISIONS

4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance

with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),

qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function

as described herein.

For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device

manufacturer’s QM plan, including screening, qualification, and conformance inspection. The performance envelope and

reliability information shall be as specified in the manufacturer’s QM plan.

For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A.

4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted

on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.

For device class T, screening shall be in accordance with the device manufacturer’s Quality Management (QM) plan, and shall

be conducted on all devices prior to qualification and technology conformance inspection.

4.2.1 Additional criteria for device class M.

a. Burn-in test, method 1015 of MIL-STD-883.

(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision

level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

test method 1015.

(2) T = +125°C, minimum.

A

b. Interim and final electrical test parameters shall be as specified in table IIA herein.

4.2.2 Additional criteria for device classes Q, T and V.

a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under

document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall

specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test

method 1015 of MIL-STD-883.

b. For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.

c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in

MIL-PRF-38535, appendix B.

4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in

accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device

manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and

herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-

PRF-38535 or as specified in the QML plan including groups A, B, C, D, and E inspections and as specified herein. Quality

conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein.

Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups

A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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TABLE IIA. Electrical test requirements.

Test requirements

Subgroups

(in accordance with

MIL-STD-883,

Subgroups

(in accordance with

MIL-PRF-38535, table III)

method 5005, table I)

Device

class M

Device

class Q

Device

class V

Device

class T

Interim electrical

parameters (see 4.2)

---

1,9

As specified

in QM plan

Final electrical

parameters (see 4.2)

1,2,3,9,10,11 1/

1,2,3,9, 1/

10,11

1,2,3,9, 2/ 3/

10,11

Group A test

requirements (see 4.4)

1,2,3,9,10,11

Group C end-point electrical

parameters (see 4.4)

1,2,3,9,10,11

1,2,3,9, 3/

10,11

Group D end-point electrical

parameters (see 4.4)

1,9

Group E end-point electrical

parameters (see 4.4)

1,9

1/ PDA applies to subgroup 1.

2/ PDA applies to subgroups 1, 9, and deltas.

3/ Delta limits (see table IIB) shall be required and the delta values shall be computed with reference to

the zero hour electrical parameters (see table I).

TABLE IIB. Burn-in delta parameters (+25°C).

Parameters

Input current, nominal

Symbol

Delta limits

±100 µA

I

CC

Input current, low

±1.0 µA

I

IL

4.4.1 Group A inspection.

a. Tests shall be as specified in table IIA herein.

b. Subgroups 4, 5, 6, 7 and 8 in table I, method 5005 of MIL-STD-883 shall be omitted.

4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.

4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:

a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level

control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify

the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method

1005 of MIL-STD-883.

b. T_A= +125°C, minimum.

c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

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4.4.2.2 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test

temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-

38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in

accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test

circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in

test method 1005 of MIL-STD-883.

4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.

4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness

assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point

electrical parameters shall be as specified in table IIA herein. For device class T, the RHA requirements shall be in accordance

with the Class T Radiation Requirements of MIL-PRF-38535. The end-point electrical parameters for device class T shall be as

specified in Table I, Group A subgroups, or as modified in the QM plan.

4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883

method 1019, condition A and as specified herein. For device class T, the total dose requirements shall be in accordance with

the class T radiation requirements of MIL-PRF-38535.

4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater

than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table I herein and shall be the

pre-irradiation end-point electrical parameter limit at 25°C ±5°C. Testing shall be performed at initial qualification and after any

design or process changes which may affect the RHA response of the device.

4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test

method 1020 of MIL-STD-883 and as specified herein (see 1.5 herein). Tests shall be performed on devices, SEC, or approved

test structures at technology qualification and after any design or process changes which may effect the RHA capability of the

process.

4.4.4.3 Single event phenomena (SEP). When specified in the purchase order or contract SEP testing shall be required on

class T and V devices (see 1.5 herein). SEP testing shall be performed on a technology process on the Standard Evaluation

Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or

process changes which may affect the upset or latchup characteristics. The recommended test conditions for SEP are as

follows:

a. The ion beam angle of incidence shall be between normal to the die surface and 60° to the normal, inclusive

(i.e. 0° ≤ angle ≤ 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.

6

2

b. The fluence shall be ≥ 100 errors or ≥ 10 ions/cm .

2

5

2

c. The flux shall be between 10 and 10 ions/cm /s. The cross-section shall be verified to be flux independent by

measuring the cross-section at two flux rates which differ by at least an order of magnitude.

d. The particle range shall be ≥ 20 micron in silicon.

e. The test temperature shall be +25°C and the maximum rated operating temperature ±10°C.

f. Bias conditions shall be defined by the manufacturer for the latchup measurements.

g. Test four devices with zero failures.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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5. PACKAGING

5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device

classes Q, T and V or MIL-PRF-38535, appendix A for device class M.

6. NOTES

6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications

(original equipment), design applications, and logistics purposes.

6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor

prepared specification or drawing.

6.1.2 Substitutability. Device class Q devices will replace device class M devices.

6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for

the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.

6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus when a system

application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users

and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering

microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.

6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43216-5000, or telephone

(614) 692-0547.

6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in

MIL-PRF-38535 and MIL-HDBK-1331.

6.6 Sources of supply.

6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in

QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and

have agreed to this drawing.

6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.

The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been

submitted to and accepted by DSCC-VA.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5062-00521

10. SCOPE

10.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified

Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers

approved QML plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices

using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes

consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or

Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.

10.2 PIN. The PIN is as shown in the following example:

5962

F

00521

01

V

9

A

Federal

stock class

designator

\

RHA

designator

(see 10.2.1)

Device

type

(see 10.2.2)

Device

class

designator

(see 10.2.3)

Die

code

Die

Details

(see 10.2.4)

/

\/

Drawing number

10.2.1 RHA designator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A

dash (-) indicates a non-RHA die.

10.2.2 Device type(s). The device type(s) shall identify the circuit function as follows:

Device type

01

Generic number

IS-1715ARH

Circuit function

Radiation hardened complementary switch

field effect transistor (FET) driver

10.2.3 Device class designator.

Device class

Device requirements documentation

Q or V

Certification and qualification to the die requirements of MIL-PRF-38535

SIZE

STANDARD

MICROCIRCUIT DRAWING

5962-00521

A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5962-00521

10.2.4. Die Details. The die details designation shall be a unique letter which designates the die’s physical dimensions,

bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each

product and variant supplied to this appendix.

10.2.4.1 Die physical dimensions.

Die type

01

Figure number

A-1

10.2.4.2. Die bonding pad locations and electrical functions.

Die type

Figure number

A-1

01

10.2.4.3. Interface materials.

Die type

Figure number

A-1

01

10.2.4.4. Assembly related information.

Die type

01

Figure number

A-1

10.3. Absolute maximum ratings. See paragraph 1.3 within the body of this drawing for details.

10.4 Recommended operating conditions. See paragraph 1.4 within the body of this drawing for details.

SIZE

STANDARD

MICROCIRCUIT DRAWING

5962-00521

A

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5962-00521

20. APPLICABLE DOCUMENTS.

20.1 Government specifications, standards, and handbooks. Unless otherwise specified, the following specification,

standard, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards

specified in the solicitation, form a part of this drawing to the extent specified herein.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883 - Test Method Standard Microcircuits.

HANDBOOK

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

(Copies of the specification, standard, and handbook required by manufacturers in connection with specific acquisition

functions should be obtained from the contracting activity or as directed by the contracting activity).

20.2. Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the

text of this drawing shall take precedence.

30. REQUIREMENTS

30.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The

modification in the QM plan shall not effect the form, fit or function as described herein.

30.2 Design, construction and physical dimensions. The design, construction and physical dimensions shall be as specified

in MIL-PRF-38535 and the manufacturer’s QM plan, for device classes Q and V and herein.

30.2.1 Die physical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1.

30.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as

specified in 10.2.4.2 and on figure A-1.

30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1.

30.2.4 Assembly related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1.

30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.3 of the body of

this document.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5962-00521

30.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post irradiation parameter limits are as specified in table I of the body of this

document.

30.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient

to make the packaged die capable of meeting the electrical performance requirements in table I.

30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a

customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN

listed in 10.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.

30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-

38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance

submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s

product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein.

30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535

shall be provided with each lot of microcircuit die delivered to this drawing.

40. QUALITY ASSURANCE PROVISIONS

40.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance

with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM

plan shall not effect the form, fit or function as described herein.

40.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the

manufacturer’s QM plan. As a minimum it shall consist of:

a) Wafer lot acceptance for Class V product using the criteria defined within MIL-STD-883 test method 5007.

b) 100% wafer probe (see paragraph 30.4).

c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 test method 2010

or the alternate procedures allowed within MIL-STD-883 test method 5004.

40.3 Conformance inspection.

40.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see

30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of

packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1,

4.4.4.1.1, 4.4.4.2, and 4.4.4.3.

50. DIE CARRIER

50.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or

as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and

electrostatic protection.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5962-00521

60 NOTES

60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with

MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and

logistics purposes.

60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone

(614) 692-0536.

60.3 Abbreviations, symbols and definitions. The abbreviations, symbols, and definitions used herein are defined within

MIL-PRF-38535 and MIL-STD-1331.

60.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.

The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have

agreed to this drawing.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

D

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APPENDIX A

APPENDIX A FORMS A PART OF SMD 5962-00521

Die bonding pad locations and electrical functions

Die physical dimensions.

Die size: 129 mils x 174 mils

Die thickness: 19 mils ±1 mil

Interface materials.

Top metallization: AL, Si, Cu 16.9 kÅ ±2 kÅ

Backside metallization: NONE (Silicon)

Glassivation.

Type: Phosphorus silicon glass (PSG)

Thickness: 8.0 kÅ ±1.0 kÅ

Substrate: Single crystal silicon

Assembly related information.

Substrate potential: Unbiased (DI)

Special assembly instructions: (1.) All double size pads are double bonded.

(2.) All pin 2 and pin 10 V

pads are bonded to V

for power and

CC

noise considerations. (These are lead-frame connected in packaged

devices.)

FIGURE A-1. Die bonding pad locations and electrical functions.

SIZE

STANDARD

5962-00521

A

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

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STANDARD MICROCIRCUIT DRAWING BULLETIN

DATE: 03-06-19

Approved sources of supply for SMD 5962-00521 are listed below for immediate acquisition information only and

shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be

revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a

certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next

dated revision of MIL-HDBK-103 and QML-38535.

Standard

microcircuit drawing

PIN 1/

Vendor

CAGE

number

Vendor

similar

PIN 2/

5962F0052101QXC

5962R0052101TXC

5962F0052101VXC

5962F0052101V9A

34371

IS9-1715ARH-8

IS9-1715ARH-T

IS9-1715ARH-Q

IS0-1715ARH-Q

1/ The lead finish shown for each PIN representing a

hermetic package is the most readily available from the

manufacturer listed for that part. If the desired lead finish

is not listed contact the vendor to determine its availability.

2/ Caution. Do not use this number for item acquisition.

Items acquired to this number may not satisfy the

performance requirements of this drawing.

Vendor CAGE

number

Vendor name

and address

34371

Intersil

2401 Palm Bay Blvd

PO Box 883

Melbourne, FL 32902-0883

The information contained herein is disseminated for convenience only and the

Government assumes no liability whatsoever for any inaccuracies in the

information bulletin.