A5030UC--Datasheet/数据表在线中文翻译

2 Data Sheets

This section presents complete electrical specifications for Teccor’s SIDACtor solid state

overvoltage protection devices.

DO-214AA Package Symbolization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3

DO-214AA

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-4

MicroCapacitance (MC) SC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-6

MicroCapacitance (MC) SA SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-8

High Surge Current (D-rated) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-10

Compak Two-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-12

Ethernet/10BaseT/100BaseT/1000BaseT Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-14

TO-92

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-16

MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-18

Modified MS-013 (Six-pin Surface Mount)

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-20

Multiport SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-22

Multiport MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-24

Multiport Balanced SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-26

Modified TO-220

SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-28

Two-chip SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-30

Two-chip MicroCapacitance (MC) SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-32

Balanced Three-chip SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-34

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . 2-36

LCAS

LCAS Asymmetrical Multiport Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-38

LCAS Asymmetrical Discrete Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-40

SIP Hybrid Overvoltage and Overcurrent Protector

Four-port Balanced Three-chip Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-42

Four-port Longitudinal Two-chip Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-44

Four-port Metallic Line Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-46

Four-port TeleLink Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-48

SLICs

Fixed Voltage SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-52

Twin SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-54

Twin SLIC Protector Modified TO-220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-56

Multiport SLIC Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-58

Battrax

Battrax SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-60

Battrax Dual Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-62

Battrax Dual Positive/Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-64

Battrax Quad Negative SLIC Protector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-66

CATVs

CATV and HFC SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-68

High Surge Current SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-70

CATV Line Amplifiers/Power Inserters ME SIDACtor Device . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-72

CATV Line Amplifiers/Power Inserters NE SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-74

CATV Line Amplifiers/Power Inserters RE SIDACtor Device. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-76

TeleLink Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-78

See next page for acronyms.

2-1

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SIDACtor^®Data Book and Design Guide

Acronyms: CATV

Community Antenna TV

Hybrid Fiber Coax

HFC

LCAS

SIP

Line Circuit Access Switch

Single In-line Package

Subscriber Line Interface Circuit

SLIC

DO-214AA Package Symbolization

Part Number

Catalog Symbolized

P1101SA

Part Number

Catalog

Symbolized

P-8A

Catalog

P2500SD

P2500SC MC

P2600SA

P2600SB

P2600SC

P2600SD

P2600SC MC

P2602SA

P2702CA

P3002CA

P3002CB

P3002SA

P3002SB

P3100SA

P3100SB

P3100SC

P3100SD

P3100SC MC

P3500SA

P3500SB

P3500SC

P3500SD

P3500SC MC

P3502SA

P3602CA

P4202CA

P4202SA

P4802CA

P4802SA

P6002CA

P6002CB

P6002SA

B1100CA

B1100CC

B1160CA

B1160CC

B1200CA

B1200CC

B2050CA

B2050CC

Symbolized

P25D

P25CM

P26A

P26B

P26C

P26D

P26CM

P262A

P27A

P30A

P30B

P30A

P30B

P31A

P31B

P31C

P31D

P31CM

P35A

P35B

P35C

P35D

P35CM

P352A

P36A

P42A

P422A

P48A

P482A

P60A

P60B

P602A

B10A

B10C

B16A

B16C

B12A

B12C

B25A

B25C

P0080SA

P01A

P01C

P12A

P12B

P12C

P12D

P12CM

P13A

P13B

P13C

P13D

P13CM

P132A

P14A

P15A

P15B

P15C

P15D

P15CM

P152A

P16A

P18A

P18B

P18C

P18D

P18CM

P182A

P20A

P20B

P20C

P20D

P20CM

P22A

P23A

P23B

P23C

P23D

P23CM

P232A

P25A

P25B

P25C

P0080SA MC

P0080SB

P0080SC

P0080SD

P0080SC MC

P0300SA

P0300SA MC

P0300SB

P0300SC

P0300SD

P0300SC MC

P0640SA

P-8AM

P-8B

P-8C

P1101SC

P1200SA

P1200SB

P1200SC

P1200SD

P1200SC MC

P1300SA

P1300SB

P1300SC

P1300SD

P1300SC MC

P1302SA

P1402CA

P1500SA

P1500SB

P1500SC

P1500SD

P1500SC MC

P1502SA

P1602CA

P1800SA

P1800SB

P1800SC

P1800SD

P1800SC MC

P1802SA

P2000SA

P2000SB

P2000SC

P2000SD

P2000SC MC

P2202CA

P2300SA

P2300SB

P2300SC

P2300SD

P2300SC MC

P2302SA

P2500SA

P2500SB

P2500SC

P-8D

P-8CM

P03A

P03AM

P03B

P03C

P03D

P03CM

P06A

P06B

P06C

P06D

P06CM

P62A

P61A

P61C

P07A

P07B

P07C

P07D

P07CM

P72A

P71A

P71C

P09A

P09B

P09C

P09D

P09CM

P92A

P91A

P91C

P11A

P0640SB

P0640SC

P0640SD

P0640SC MC

P0641CA2

P0641SA

P0641SC

P0720SA

P0720SB

P0720SC

P0720SD

P0720SC MC

P0721CA2

P0721SA

P0721SC

P0900SA

P0900SB

P0900SC

P0900SD

P0900SC MC

P0901CA2

P0901SA

P0901SC

P1100SA

P1100SB

P11B

P1100SC

P1100SD

P1100SC MC

P1101CA2

P11C

P11D

P11CM

P02A

Note: Date code is located below the symbolized part number.

2 - 3

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SIDACtor^®Data Book and Design Guide

SIDACtor Device

DO-214AA SIDACtor solid state protection devices protect telecommunications equipment

such as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

100

110

50

40

30

P0080S_

P0300S_

P0640S_

P0720S_

P0900S_

P1100S_

P1300S_

P1500S_

P1800S_

P2300S_

P2600S_

P3100S_

P3500S_

4

5

25

58

65

75

40

77

88

98

130

160

180

220

260

300

350

400

50

150

90

120

140

170

190

220

275

320

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is

approximately 2x the listed value. The off-state capacitance of the P0080SB is equal to the “SC” device.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

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2 - 4

SIDACtor^®Data Book and Design Guide

SIDACtor Device

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 5

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SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SC SIDACtor Device

The DO-214AA SC MC SIDACtor series is intended for applications sensitive to load

values. Typically, high speed connections require a lower capacitance. C_Ovalues for the

MicroCapacitance device are 40% lower than a standard SC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, IEC 60950, UL 60950, and TIA-968 (formerly known as

FCC Part 68). Contact factory regarding ITU K.20, K.21, and K.45.

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

55

35

60

50

40

P0080SC MC

P0300SC MC

P0640SC MC

P0720SC MC

P0900SC MC

P1100SC MC

P1300SC MC

P1500SC MC

P1800SC MC

P2300SC MC

P2600SC MC

P3100SC MC

P3500SC MC

4

5

25

58

65

75

40

77

88

98

130

160

180

220

260

300

350

400

50

150

90

120

140

170

190

220

275

320

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

C

500

400

200

150

100

30

500

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2 - 6

SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SC SIDACtor Device

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

50

0

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 7

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SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SA SIDACtor Device

The DO-214AA SA MC SIDACtor series is intended for applications sensitive to load

values. Typically, high speed connections require a lower capacitance. C_Ovalues for the

MicroCapacitance device are 40% lower than a standard SA part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-

968 (formerly known as FCC Part 68).

Electrical Parameters

Part

V

I

C

DRM

S

T

DRM

S

T

H

O

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

45

25

P0080SA MC

P0300SA MC

4

5

25

40

800

2.2

50

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

150

90

50

45

20

500

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2 - 8

SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SA SIDACtor Device

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

50

0

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 9

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SIDACtor^®Data Book and Design Guide

High Surge Current (D-rated) SIDACtor Device

DO-214AA SIDACtor solid state protection devices with a D surge rating protect

telecommunications equipment such as modems, line cards, fax machines, and other CPE.

These SIDACtor devices withstand simultaneous surges incurred in GR 1089 lightning

tests. (See "First Level Lightning Surge Test" on page 4-5.) Surge ratings are twice that of a

device with a C surge rating. This allows a discrete surface mount version of Teccor’s

patented “Y” configuration. (US Patent 4,905,119)

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

200

220

100

80

P0080SD **

P0300SD **

P0640SD **

P0720SD **

P0900SD **

P1100SD

P1300SD

P1500SD

P1800SD

P2300SD

P2600SD

P3100SD

P3500SD

4

5

25

58

65

75

40

77

88

98

130

160

180

220

260

300

350

400

50

90

120

140

170

190

220

275

320

80

60

* For surge ratings, see table below.

** Contact factory for release date.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

D

1000

800

400

300

200

50

1000

http://www.teccor.com

+1 972-580-7777

2 - 10

SIDACtor^®Data Book and Design Guide

High Surge Current (D-rated) SIDACtor Device

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 11

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Compak Two-chip SIDACtor Device

The modified DO-214AA SIDACtor device provides low-cost, longitudinal protection.

1

(T)

2

(G)

SIDACtor devices are used to enable equipment to meet various regulatory requirements

3

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

(R)

known as FCC Part 68).

Electrical Parameters

V

C

O

DRM

S

DRM

S

Volts

pF

mAmps Amps mAmps Pins 1-3

Part

V

I

S

I

H

T

DRM

T

Number

Pins1-2, 2-3

Pins 1-3

Volts

µAmps

P1402C_

P1602C_

P2202C_

P2702C_

P3002C_

P3602C_

P4202C_

P4802C_

P6002C_

58

65

90

120

140

170

190

220

275

77

95

116

130

180

240

280

340

380

440

550

154

190

260

320

360

440

500

600

700

4

5

800

2.2

120

15

130

160

180

220

250

300

350

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-3 at 1 MHz with a 2 V bias.

UL 60950 creepage requirements must be considered.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

A

B *

Amps

Amps/µs

150

250

150

250

90

150

50

100

45

80

20

30

500

* Contact factory for release date.

http://www.teccor.com

+1 972-580-7777

2 - 12

SIDACtor^®Data Book and Design Guide

Compak Two-chip SIDACtor Device

Thermal Considerations

Package

Modified DO-214AA

Pin 3

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

85

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

Pin 1

Pin 2

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 13

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Ethernet/10BaseT/100BaseT/1000BaseT Protector

Ethernet/10BaseT/100BaseT/1000BaseT

Protector

The DO-214AA SIDACtor Ethernet protection series is intended for applications sensitive to

load values. Typically, high speed connections require a lower capacitance. C_Ovalues are

40% lower than standard devices.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

58

Volts

77

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

120

pF

25

20

15

P0642S_

P0722S_

P0902S_

P1102S_

P1402S_

P3002S_

P4802S_

4

5

65

75

90

88

98

130

180

360

600

800

2.2

120

140

280

440

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

A

B**

Amps

Amps/µs

150

250

150

250

90

150

50

100

45

80

20

30

500

** Contact factory for release date of B-rated devices.

http://www.teccor.com

+1 972-580-7777

2 - 14

SIDACtor^®Data Book and Design Guide

Ethernet/10BaseT/100BaseT/1000BaseT Protector

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 15

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

SIDACtor Device

TO-92 SIDACtor solid state protection devices protect telecommunications equipment such

as modems, line cards, fax machines, and other CPE.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68)

.

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

100

110

50

40

30

P0080E_

P0300E_

P0640E_

P0720E_

P0900E_

P1100E_

P1300E_

P1500E_

P1800E_

P2300E_

P2600E_

P3100E_

P3500E_

4

5

25

58

65

75

40

77

88

98

130

160

180

220

260

300

350

400

50

150

90

120

140

170

190

220

275

320

* For individual “EA”, “EB”, and “EC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “EA” and “EB” product. “EC” capacitance is

approximately 2x the listed value. The off-state capacitance of the P0080EB is equal to the “EC” device.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 16

SIDACtor^®Data Book and Design Guide

SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

TO-92

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 17

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SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SIDACtor Device

The TO-92 MC SIDACtor series is intended for applications sensitive to load values.

Typically, high speed connections require a lower capacitance. C_Ovalues for MC devices

are 40% lower than a standard EC part.

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-

968 (formerly known as FCC Part 68) without the need of series resistors.

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

58

Volts

77

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

150

pF

60

50

40

P0640EC MC

P1500EC MC

P2600EC MC

P3100EC MC

4

5

140

220

275

180

300

350

800

2.2

150

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

C

500

400

200

150

100

50

500

http://www.teccor.com

+1 972-580-7777

2 - 18

SIDACtor^®Data Book and Design Guide

MicroCapacitance (MC) SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

TO-92

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 19

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Balanced Three-chip SIDACtor Device

This balanced protector is a surface mount alternative to the modified TO-220 package.

1

2

3

6

5

4

Based on a six-pin surface mount SOIC package, it uses Teccor’s patented “Y”

(US Patent 4,905,119) configuration. It is available in surge current ratings up to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-3, 1-4

Pins 3-4

Volts

µAmps mAmps Amps mAmps

pF

80

60

80

60

P1553U_

P1803U_

P2103U_

P2353U_

P2703U_

P3203U_

P3403U_

P5103U_

A2106U_3 **

A5030U_3 **

130

150

170

200

230

270

300

420

170

400

180

210

250

270

300

350

400

600

250

550

130

150

170

200

230

270

300

420

50

180

210

250

270

300

350

400

600

80

8

5

800

2.2

150

120

150

270

340

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

** Asymmetrical

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-3 and 1-4 at 1 MHz with a 2 V bias and is a typical value for “UA”, “UB”, and “UC”

products.

•

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 20

SIDACtor^®Data Book and Design Guide

Balanced Three-chip SIDACtor Device

Thermal Considerations

Package

Modified MS-013

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

T

J

6

5

4

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 21

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Multiport SIDACtor Device

The multiport line protector is an integrated multichip solution for protecting multiple

twisted pair from overvoltage conditions. Based on a six-pin surface mount SOIC

package, it is equivalent to four discrete DO-214AA or two TO-220 packages.

Available in surge current ratings up to 500 A, the multiport line protector is ideal for

densely populated, high-speed line cards that cannot afford PCB inefficiencies or the

use of series power resistors.

1

(R )

6

(T )

1

2

5

(G )

2

(G )

2

1

3

(T )

4

(R )

1

2

SIDACtor devices are used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950,

and TIA-968 (formerly known as FCC Part 68).

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 3-2, 4-5, 6-5

Pins 1-3, 4-6

Volts

µAmps

mAmps Amps mAmps

pF

100

110

50

40

30

P0084U_

P0304U_

P0644U_

P0724U_

P0904U_

P1104U_

P1304U_

P1504U_

P1804U_

P2304U_

P2604U_

P3104U_

P3504U_

6

25

40

12

50

4

5

800

2.2

50

80

58

77

116

130

150

180

240

280

340

380

440

550

640

154

176

196

260

320

360

440

520

600

700

800

150

65

88

75

98

90

130

160

180

220

260

300

350

400

120

140

170

190

220

275

320

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

is measured at I , and V is measured at 100 V/µs.

V

DRM

S

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 2x higher.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 22

SIDACtor^®Data Book and Design Guide

Multiport SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

60

Unit

°C

Modified MS-013

T

J

6

5

4

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 23

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SIDACtor^®Data Book and Design Guide

Multiport MicroCapacitance (MC) SIDACtor Device

Multiport MicroCapacitance (MC)

SIDACtor Device

The multiport MC line protector is an integrated, multichip solution for protecting

multiple twisted pair from overvoltage conditions. It is intended for applications

sensitive to load values. Typically, high speed connections require lower capacitance.

1

(R )

6

(T )

1

2

C

values for the MC devices are 40% lower than standard UC devices

O

5

(G )

2

(G )

2

1

Based on a six-pin surface mount SOIC package, it is equivalent to four discrete DO-

214AA or two TO-220 packages, which makes it ideal for densely populated, high-

speed line cards that cannot afford PCB inefficiencies or the use of series power

resistors. Surge current ratings up to 500 A are available.

3

(T )

4

(R )

1

2

SIDACtor devices are used to enable equipment to meet various regulatory requirements including GR 1089,

ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68).

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 3-2, 4-5, 6-5

Pins 1-3, 4-6

Volts

µAmps

mAmps Amps mAmps

pF

30

25

20

P0084UC MC

P0304UC MC

P0644UC MC

P0724UC MC

P0904UC MC

P1104UC MC

P1304UC MC

P1504UC MC

P1804UC MC

P2304UC MC

P2604UC MC

P3104UC MC

P3504UC MC

6

25

40

12

50

4

5

800

2.2

50

80

58

77

116

130

150

180

240

280

340

380

440

550

640

154

176

196

260

320

360

440

520

600

700

800

150

65

88

75

98

90

130

160

180

220

260

300

350

400

120

140

170

190

220

275

320

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

C

500

400

200

150

100

50

500

http://www.teccor.com

+1 972-580-7777

2 - 24

SIDACtor^®Data Book and Design Guide

Multiport MicroCapacitance (MC) SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

60

Unit

°C

Modified MS-013

T

J

6

5

4

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 25

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Multiport Balanced SIDACtor Device

This multiport balanced protector is a surface mount alternative to the modified TO-220

1

2

3

6

5

4

package. It is based on a six-pin surface mount SOIC package and uses Teccor’s

patented “Y” (US Patent 4,905,119) configuration. It is available in surge current ratings up

to 500 A.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters — Symmetrical

V

C

O

DRM

S

DRM

S

Volts

Volt

Volts

pF

mAmps Amps mAmps Pins 3-2, 6-5, 1-2, 4-5

Part

V

I

S

I

H

T

DRM

T

Number *

Pins 1-2, 2-3, 1-3 Pins 4-5, 5-6, 4-6

Volts

µAmps

P1556U_

P1806U_

P2106U_

P2356U_

P2706U_

P3206U_

P3406U_

P5106U_

130

150

170

200

230

270

300

420

180

210

250

270

300

350

400

600

130

150

170

200

230

270

300

420

180

210

250

270

300

350

400

600

8

5

800

2.2

150

40

30

Electrical Parameters — Asymmetrical

V

S

DRM

S

DRM

Volts

Volt

Volts

Part

Pins 1-2, 2-3, 4-5,

V

I

C

T

DRM

S

T

H

O

Number *

5-6

Pins 4-6, 1-3

Volts

3.5

µAmps

mAmps Amps mAmps

pF

40

30

A2106U_6

A5030U_6

170

400

250

550

50

80

5

800

2.2

120

150

270

340

3.5

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 10 pF higher.

•

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 26

SIDACtor^®Data Book and Design Guide

Multiport Balanced SIDACtor Device

Thermal Considerations

Package

Modified MS-013

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

T

J

T

S

6

5

4

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 27

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

SIDACtor Device

The modified TO-220 Type 61 SIDACtor solid state protection device can be used in

telecommunication protection applications that do not reference earth ground.

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

180

200

220

240

270

300

Volts

220

240

260

290

330

360

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

150

pF

30

P2000AA61

P2200AA61

P2400AA61

P2500AA61

P3000AA61

P3300AA61

4

5

800

2.2

150

800

2.2

150

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

0.2x310 µs

2x10 µs

8x20 µs

10x160 µs

10x560 µs

5x320 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

20

150

90

50

75

45

20

500

http://www.teccor.com

+1 972-580-7777

2 - 28

SIDACtor^®Data Book and Design Guide

SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

Type 61

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 29

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Two-chip SIDACtor Device

The two-chip modified TO-220 SIDACtor solid state device protects telecommunication

equipment in applications that reference Tip and Ring to earth ground but do not require

balanced protection.

1

(T)

2

(G)

3

(R)

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 3-2

25

58

65

90

120

140

170

190

220

275

Pins 1-3

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

110

50

40

30

P0602A_

P1402A_

P1602A_

P2202A_

P2702A_

P3002A_

P3602A_

P4202A_

P4802A_

P6002A_

40

77

95

130

160

180

220

250

300

350

50

80

4

5

116

130

180

240

280

340

380

440

550

154

190

260

320

360

440

500

600

700

800

150

800

* For individual “AA”, “AB”, and “AC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB”

and “AC” capacitance is approximately 2x the listed value.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 30

SIDACtor^®Data Book and Design Guide

Two-chip SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 31

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Two-chip MicroCapacitance (MC) SIDACtor Device

Two-chip MicroCapacitance (MC)

SIDACtor Device

The two-chip modified TO-220 MC SIDACtor solid state device protects telecommunication

1

equipment in applications that reference Tip and Ring to earth ground but do not require

(T)

2

(G)

balanced protection.

3

(R)

SIDACtor devices are used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters: A-rated

V

S

DRM

S

DRM

Volts

Part

V

I

C

T

DRM

S

T

H

O

Number *

Pins 1-2, 3-2

6

25

Pins 1-3

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

45

25

P0302AA MC

P0602AA MC

25

40

12

50

80

4

5

800

2.2

50

Electrical Parameters: C-rated

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 3-2

25

58

65

90

120

140

170

190

220

275

Pins 1-3

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

60

50

40

P0602AC MC

P1402AC MC

P1602AC MC

P2202AC MC

P2702AC MC

P3002AC MC

P3602AC MC

P4202AC MC

P4802AC MC

P6002AC MC

40

77

95

130

160

180

220

250

300

350

50

80

4

5

116

130

180

240

280

340

380

440

550

154

190

260

320

360

440

500

600

700

800

150

800

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

150

45

100

20

50

500

http://www.teccor.com

+1 972-580-7777

2 - 32

SIDACtor^®Data Book and Design Guide

Two-chip MicroCapacitance (MC) SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 33

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Balanced Three-chip SIDACtor Device

The three-chip modified TO-220 SIDACtor balanced solid state device is designed for

1

3

telecommunication protection systems that reference Tip and Ring to earth ground.

Applications include any piece of transmission equipment that requires balanced protection.

This device is built using Teccor’s patented “Y” (US Patent 4,905,119) configuration.

2

The SIDACtor device is used to enable equipment to meet various regulatory requirements

including GR 1089, ITU K.20,K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly

known as FCC Part 68).

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 2-3

Pins 1-3

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

150

pF

40

30

40

30

P1553A_

P1803A_

P2103A_

P2353A_

P2703A_

P3203A_

P3403A_

P5103A_

A2106A_3 **

A5030A_3 **

130

150

170

200

230

270

300

420

170

400

180

210

250

270

300

350

400

600

250

550

130

150

170

200

230

270

300

420

50

180

210

250

270

300

350

400

600

80

8

5

800

150

120

270

340

800

150

* For individual “AA”, “AB”, and “AC” surge ratings, see table below.

** Asymmetrical

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “AA” product. “AB”

and “AC” capacitance is approximately 2x the listed value.

•

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 34

SIDACtor^®Data Book and Design Guide

Balanced Three-chip SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 35

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

Balanced Three-chip MicroCapacitance (MC)

SIDACtor Device

The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-

tion equipment in high-speed applications that are sensitive to load values and that require

a lower capacitance. C_Ovalues for the MC are 40% lower than a standard AC part.

1

3

2

This MC SIDACtor series is used to enable equipment to meet various regulatory

requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and

TIA-968 (formerly known as FCC Part 68) without the need of series resistors.

Electrical Parameters

V

S

DRM

S

DRM

Volts

Part

V

I

C

O

T

DRM

S

T

H

Number *

Pins 1-2, 2-3

Pins 1-3

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

150

pF

40

30

P1553AC MC

P1803AC MC

P2103AC MC

P2353AC MC

P2703AC MC

P3203AC MC

P3403AC MC

P5103AC MC

130

150

170

200

230

270

300

420

180

210

250

270

300

350

400

600

130

150

170

200

230

270

300

420

180

210

250

270

300

350

400

600

8

5

800

2.2

150

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

C

500

400

200

150

100

50

500

http://www.teccor.com

+1 972-580-7777

2 - 36

SIDACtor^®Data Book and Design Guide

Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 37

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+1 972-580-7777

SIDACtor^®Data Book and Design Guide

LCAS Asymmetrical Multiport Device

This is an integrated multichip solution for protecting multiple twisted pair from

1

(R )

6

(T )

overvoltage conditions. Based on a six-pin surface mount SOIC package, it is

equivalent to four discrete DO-214AA or two TO-220 packages. Available in surge

current ratings up to 500 A, the multiport line protector is ideal for densely populated

line cards that cannot afford PCB inefficiencies or the use of series power resistors.

1

2

5

(G )

2

(G )

2

1

3

(T )

4

(R )

For a diagram of an LCAS (Line Circuit Access Switch) application, see Figure 3.23.

1

2

Electrical Parameters

V

C

DRM

S

DRM

S

O

Volts

pF

Part

V

I

S

I

H

T

DRM

T

Number *

Pins 3-2, 6-5

Pins 1-2, 4-5

Volts

µAmps

mAmps Amps mAmps

Pins 3-2, 6-5, 1-2, 4-5

A1220U_4

A1225U_4

100

130

180

230

220

290

4

5

800

2.2

120

30

* For individual “UA”, “UB”, and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “UA” product. “UB”

and “UC” capacitance is approximately 2x higher.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 38

SIDACtor^®Data Book and Design Guide

LCAS Asymmetrical Multiport Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

Modified MS-013

T

J

6

5

4

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 39

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

LCAS Asymmetrical Discrete Device

These DO-214AA SIDACtor devices are intended for LCAS (Line Circuit Access Switch)

applications that require asymmetrical protection in discrete (individual) packages. They

enable the protected equipment to meet various regulatory requirements including

GR 1089, ITU K.20, K.21, K.45, IEG 60950, UL 60950, and TIA-968.

Electrical Parameters

Part

V

I

C

DRM

S

T

DRM

S

T

H

O

Number *

Volts

100

Volts

130

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

120

pF

40

30

P1200S_

P2000S_

P2500S_

4

5

180

230

220

290

800

2.2

120

* For individual “SA”, “SB”, and “SC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB”

product. “SC” capacitance is approximately 10 pF higher.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 40

SIDACtor^®Data Book and Design Guide

LCAS Asymmetrical Discrete Device

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

I

I_S

I^S

I_H

H

Waveform = t_rx t_d

I

I_D_D_R_R_M_M

-V

+V

Half Value

V_DRM

V_T

V_S

0

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 41

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Four-port Balanced Three-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and

overvoltage conditions. Comprised of twelve discrete DO-214AA SIDACtor devices and

eight TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot

afford PCB inefficiencies or the use of series power resistors. Surge current ratings up to

500 A are available.

F2

Z3

F4

Z6

F6

Z9

F8

Tip

Gnd

Ring

2

3

4

5

Tip

Gnd

Ring

7

8

9

10

Tip

12

15

Tip

17

20

Z12

Z11

Z2

Z5

Z8

Gnd 13

Ring 14

Gnd 18

Ring 19

Z10

F7

Z7

F5

Z1

F1

Z4

F3

1

6

11

16

Electrical Parameters

V

C

O

DRM

S

DRM

S

Volts

pF

Pins 2-3, 4-3, 7-8, 9-8,

12-13, 14-13, 17-18,

19-18

Part

Pins 2-4, 7-9,

12-14, 17-19

V

I

H

T

DRM

S

T

Number *

Volts

µAmps

mAmps

800

Amps

2.2

mAmps Pins 1-3

P1553Z_

P1803Z_

P2103Z_

P2353Z_

P2703Z_

P3203Z_

P3403Z_

A2106Z_3 **

A5030Z_ 3 **

130

150

170

200

230

270

300

170

400

180

210

250

270

300

350

400

250

550

130

180

210

250

270

300

350

400

80

8

5

150

120

150

40

30

40

30

150

170

200

230

270

300

50

800

270

340

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

** Asymmetrical

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.

“ZB” and “ZC” capacitance is approximately 10 pF higher.

•

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 42

SIDACtor^®Data Book and Design Guide

Four-port Balanced Three-chip Protector

Thermal Considerations

Package

SIP

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I_S

I

I_H

Waveform = t_rx t_d

H

I

I_D_D_R_R_M_M

-V

50

0

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Waveform

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

-8

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 43

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Four-port Longitudinal Two-chip Protector

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent and

overvoltage conditions. Comprised of eight discrete DO-214AA SIDACtor devices and eight

TeleLink surface mount fuses, it is ideal for densely populated line cards that cannot afford

PCB inefficiencies or the use of series power resistors. Surge current ratings up to 500 A

are available.

F2

F4

F6

F8

Tip

Gnd

Ring

2

3

4

5

Tip

Gnd

Ring

7

8

9

10

Tip 12

Gnd 13

Ring 14

15

Tip 17

Gnd 18

Ring 19

20

Z4

Z6

Z2

Z8

Z1

Z3

Z5

Z7

1

6

11

16

F1

F3

F5

F7

Electrical Parameters

V

C

DRM

S

DRM

S

O

pF

Volts

Pins 2-3, 4-3, 7-8, 9-8,

Number * 12-13, 14-13, 17-18, 19-18

Volts

Part

Pins 2-4, 7-9,

V

I

H

Pins

T

DRM

S

T

12-14, 17-19

Volts

µAmps

mAmps

800

Amps

mAmps 2-3, 3-4

P0602Z_

P1402Z_

P1602Z_

P2202Z_

P2702Z_

P3002Z_

P3602Z_

P4202Z_

P4802Z_

P6002Z_

25

58

65

40

77

95

130

160

180

220

250

300

350

50

80

4

5

2.2

50

110

50

40

30

116

130

180

240

280

320

380

440

550

154

190

260

320

360

440

500

600

700

800

150

90

120

140

160

190

220

275

800

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured between Pins 4-3 and Pins 2-3 at 1 MHz with a 2 V bias and is a typical value for “ZA” product.

“ZB” and “ZC” capacitance is approximately 2x higher.

•

Device is designed to meet balance requirements of GTS 8700 and GR 974.

Lower capacitance MC versions may be available. Contact factory for further information.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

http://www.teccor.com

+1 972-580-7777

2 - 44

SIDACtor^®Data Book and Design Guide

Four-port Longitudinal Two-chip Protector

Thermal Considerations

Package

SIP

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I_S

I

I_H

Waveform = t_rx t_d

H

I

I_D_D_R_R_M_M

-V

50

0

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Waveform

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

-8

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 45

http://www.teccor.com

+1 972-580-7777

SIDACtor^®Data Book and Design Guide

Four-port Metallic Line Protector

The four-port hybrid Single In-line Package (SIP) line protector protects multiple twisted pair

from overcurrent and overvoltage conditions. Based on a SIP, it is equivalent to four

discrete DO-214AA SIDACtor devices and four surface mount fuses. Available in surge

current ratings up to 500 A, this four-port SIP line protector is ideal for densely populated

line cards that cannot afford PCB inefficiencies or the use of series power resistors.

F2

F3

F4

F1

5

7

8

10

11

Tip

1

2

Tip

4

Tip

Z1

Z2

Z3

Z4

Ring

3

Ring

6

Ring

9

Ring 12

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

S

T

H

Number *

Volts

6

Volts

25

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

pF

100

110

50

40

30

P0080Z_

P0300Z_

P0640Z_

P0720Z_

P0900Z_

P1100Z_

P1300Z_

P1500Z_

P1800Z_

P2300Z_

P2600Z_

P3100Z_

P3500Z_

4

5

25

58

65

75

40

77

88

98

130

160

180

220

260

300

350

400

50

150

90

120

140

170

190

220

275

320

* For individual “ZA,” “ZB,” and “ZC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “ZA” and “ZB” product. “ZC” capacitance is

approximately 2x the listed value.

•

Lower capacitance MC versions may be available. Contact factory for further information.

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

B

C

150

250

500

150

250

400

90

150

200

50

100

150

45

80

100

20

30

50

500

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+1 972-580-7777

2 - 46

SIDACtor^®Data Book and Design Guide

Four-port Metallic Line Protector

Thermal Considerations

Package

SIP

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I_S

I

I_H

Waveform = t_rx t_d

H

I

I_D_D_R_R_M_M

-V

50

0

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Waveform

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

-8

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 47

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SIDACtor^®Data Book and Design Guide

Four-port TeleLink Fuse

This hybrid Single In-line Package (SIP) protects four twisted pairs from overcurrent

conditions. Comprising eight TeleLink surface mount fuses, it is ideal for densely populated

line cards that connot afford PCB inefficiencies or the use of series power resistors. F0500T,

F1250T, F1251T versions are available.

Surge Ratings

I

PP

2x10 µs

10x160 µs

10x560 µs

10x1000 µs

Amps

TeleLink SM Fuse

Amps

F0500Z8

F1250Z8

F1251Z8

not rated

500

75

160

45

115

35

100

Interrupting Values

2

I t Measured

at DC Rated

Voltage

Interrupting Rating

TeleLink SM

Voltage

Rating

250 V

Current

Rating

500 mA

1.25 A

2 A

Fuse

Voltage, Current

600 V, 40 A

600 V, 60 A *

MIN

1 ms

TYP

MAX

60 ms

2

F0500Z8

F1250Z8

F1251Z8

1.3 A s

2 ms

2

22.2 A s

2

30 A s

* Interrupt test characterized at 50° to 70° phase angle. Phase angles approximating 90° may result in damage to the body of the fuse.

Notes:

•

The TeleLink SM fuse is designed to carry 100% of its rated current for four hours and 250% of its rated current for one second

minimum and 120 seconds maximum. Typical time is four to 10 seconds. For optimal performance, an operating current of 80% or

less is recommended.

2

•

I t is a non-repetitive RMS surge current rating for a period of 16.7 ms.

Resistance Ratings

DC Cold Resistance

Typical Voltage Drop

@ Rated Current

TeleLink SM Fuse

F0500Z8

MIN

MAX

0.471 V

0.205 V

0.110 V

0.420 Ω

0.107 Ω

0.050 Ω

0.640 Ω

0.150 Ω

0.100 Ω

F1250Z8

F1251Z8

Notes:

•

Typical inductance < 150 nH up to 500 MHz.

Resistance changes 0.5% for every °C.

Resistance is measured at 10% rated current.

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2 - 48

SIDACtor^®Data Book and Design Guide

Four-port TeleLink Fuse

Qualification Data

The F1250Z8 and F1251Z8 meet the following test conditions per GR 1089 without additional series

resistance. However, in-circuit test verification is required. Note that considerable heating may occur during

Test 4 of the Second Level AC Power Fault Test.

First Level Lightning Surge Test

Surge Voltage

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

Test

Volts

1

2

3

4

5

±600

±1000

±2500

±1000

10x1000

10x360

10x1000

2x10

100

500

25

10

5

10x360

Second Level Lightning Surge Test

Surge Voltage

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

Test

Volts

1

±5000

2x10

500

1

First Level AC Power Fault Test

Applied Voltage, 60 Hz

Short Circuit Current

Test

1

V

Amps

Duration

15 min

RMS

50

0.33

2

100

0.17

15 min

3

4

5

6

7

8

9

200, 400, 600

1 at 600 V

60 applications, 1 s each

60 applications, 5 s each

30 s each

1000

*

600

1000

1

*

0.5

2.2

3

2 s each

1 s each

0.5 s each

5

* Test 5 simulates a high impedance induction fault. For specific information, please contact Teccor Electronics.

Second Level AC Power Fault Test for Non-Customer Premises Equipment

Applied Voltage, 60 Hz

Short Circuit Current

Test

V

Amps

Duration

30 min

5 s

30 min

RMS

1

2

3

4

120, 277

600

30

60

7

100-600

2.2 at 600 V

Notes:

•

Power fault tests equal or exceed the requirements of UL 60950 3rd edition.

Test 4 is intended to produce a maximum heating effect. Temperature readings can exceed 150 °C.

Test 2 may be dependent on the closing angle of the voltage source. Fuse is characterized at 50° to 70°. Closing angles

approximating 90° may result in damage to the body of the fuse.

2 - 49

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SIDACtor^®Data Book and Design Guide

Four-port TeleLink Fuse

1000

800

700

600

500

400

300

200

100

90

80

70

60

50

40

30

20

F0500T

F1250T

F1251T

10

9

8

7

6

5

4

3

2

1

.9

.8

.7

.6

.5

.4

.3

.2

.1

.09

.08

.07

.06

.05

.04

.03

.02

.01

.1

.2

.4

.5

.7 .8 .9

1

5

10

20

30

50 60 70 80 90100

Current in Amperes

Time Current Curve

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2 - 50

SIDACtor^®Data Book and Design Guide

Four-port TeleLink Fuse

Temperature Derating Curve

Operating temperature is -55 °C to +125 °C with proper correction factor applied.

150

140

130

120

110

100

90

80

70

60

Effect on

Current Rating

50

40

30

-55 -60 -40 -20

0

20 40 60 80 100 125

Ambient ˚C

Chart of Correction Factor

Maximum Temperature Rise

TeleLink Fuse

F0500Z8

F1250Z8

Temperature Reading

≤75 °C (167 °F) *

F1251Z8

* Higher currents and PCB layout designs can affect this parameter.

Notes:

•

Readings are measured at rated current after temperature stabilizes

The F1250Z8 meets the requirements of UL 248-14. However, board layout, board trace widths, and ambient

temperature values can cause higher than expected rises in temperature. During UL testing, the typical

recorded heat rise for the F1250Z8 at 2.2 A was 120 °C.

•

F8

F2

F4

F6

20

Tip 17

n/c 18

Tip

n/c

2

3

4

5

Tip

n/c

7

8

9

10

Tip 12

n/c 13

15

Ring 19

16

11

Ring

1

Ring

6

Ring 14

F7

F1

F3

F5

SIDACtor^®Data Book and Design Guide

2 - 51

http://www.teccor.com

+1 972-580-7777

Fixed Voltage SLIC Protector

These DO-214AA unidirectional protectors are constructed with a SIDACtor device and an

(T/R)

integrated diode. They protect SLICs (Subscriber Line Interface Circuits) from damage

during transient voltage activity and enable line cards to meet various regulatory

requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-

968 (formerly known as FCC Part 68).

(G)

For specific design criteria, see details in Figure 3.23.

Cathode

Electrical Parameters

Part

V

I

C

O

DRM

S

T

F

DRM

S

T

H

Number *

Volts

58

Volts

77

Volts

µAmps

mAmps

800

Amps

mAmps

120

pF

70

P0641S_

P0721S_

P0901S_

P1101S_

4

5

1

65

75

95

88

98

130

800

120

* For individual “SA” and “SC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

V

is measured at I

DRM.

F

DRM

S

and V are measured at 100 V/µs.

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value for “SA” and “SB” product. “SC” capacitance is

approximately 2x the listed value.

•

Parallel capacitive loads may affect electrical parameters.

Surge Ratings (Preliminary Data)

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

150

45

100

20

50

500

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+1 972-580-7777

2 - 52

SIDACtor^®Data Book and Design Guide

Fixed Voltage SLIC Protector

Thermal Considerations

Package

DO-214AA

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

90

Unit

°C

T

J

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

+I

t_r= rise time to peak value

t_d= decay time to half value

V_F

I_T

Peak

Value

100

I_S

I_H

Waveform = t_rx t_d

V_DRM

V_S

V_T

I_DRM

-V

50

+V

Half Value

I_DRM

V_DRM

V_T

I_H

I_S

V_S

0

t_r

0

t_d

I_T

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 53

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SIDACtor^®Data Book and Design Guide

Twin SLIC Protector

Subscriber Line Interface Circuits (SLIC) are highly susceptible to transient voltages, such

as lightning and power cross conditions. To minimize this threat, Teccor provides this dual-

chip, fixed-voltage SLIC protector device.

1

(T)

2

(G)

3

For specific design criteria, see details in Figure 3.30.

(R)

Electrical Parameters

V

S

DRM

Volts

Part

V

I

C

O

T

F

DRM

S

T

H

Number *

Pins 1-2, 3-2

Volts

µAmps

mAmps

800

Amps

mAmps

120

pF

60

P0641CA2

P0721CA2

P0901CA2

P1101CA2

58

65

75

95

77

88

98

4

5

1

800

120

130

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

V

is measured at I

DRM.

F

DRM

S

and V are measured at 100 V/µs.

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured across pins 1-2 or 3-2 at 1 MHz with a 2 V bias. Capacitance across pins 1-3 is approximately

half.

•

Parallel capacitive loads may affect electrical parameters.

Compliance with GR 1089 or UL 60950 power cross tests may require special design considerations. Contact the factory for further

information.

Surge Ratings (Preliminary Data)

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

150

90

50

45

20

500

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2 - 54

SIDACtor^®Data Book and Design Guide

Twin SLIC Protector

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

Unit

°C

Modified DO-214AA

T

-40 to +150

-65 to +150

85

J

Pin 3

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

Pin 1

Pin 2

+I

t_r= rise time to peak value

t_d= decay time to half value

V_F

I_T

Peak

Value

100

I_S

I_H

Waveform = t_rx t_d

V_DRM

V_S

V_T

I_DRM

-V

+V

-V

50

0

+V

Half Value

I_DRM

V_DRM

V_T

I_H

I_S

V_S

t_r

t_d

I_T

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 55

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SIDACtor^®Data Book and Design Guide

Twin SLIC Protector Modified TO-220

Subscriber Line Interface Circuits (SLIC) are highly susceptible to transient voltages, such

as lightning and power cross conditions. To minimize this threat, Teccor provides this dual-

chip, fixed-voltage SLIC protector device.

1

(T)

2

(G)

3

For specific design criteria, see details in Figure 3.30.

(R)

Electrical Parameters

V

S

DRM

Volts

Part

V

I

C

O

T

F

DRM

S

T

H

Number *

Pins 1-2, 3-2

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

120

pF

40

60

P0641A_2

P0721A_2

P0901A_2

P1101A_2

58

65

75

95

77

88

98

4

5

800

2.2

120

130

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

V

is measured at I

DRM.

F

DRM

S

and V are measured at 100 V/µs.

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured across pins 1-2 or 3-2 at 1 MHz with a 2 V bias. Capacitance across pins 1-3 is approximately

half.

•

Parallel capacitive loads may affect electrical parameters.

Compliance with GR 1089 or UL 60950 power cross tests may require special design considerations. Contact the factory for further

information.

Surge Ratings (Preliminary Data)

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

150

45

100

20

50

500

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+1 972-580-7777

2 - 56

SIDACtor^®Data Book and Design Guide

Twin SLIC Protector Modified TO-220

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

50

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

+I

t_r= rise time to peak value

t_d= decay time to half value

V_F

I_T

Peak

Value

100

50

0

I_S

I_H

Waveform = t_rx t_d

V_DRM

V_S

V_T

I_DRM

-V

+V

-V

+V

Half Value

I_DRM

V_DRM

I_H

V_T

V_S

I_S

t_r

t_d

I_T

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 57

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SIDACtor^®Data Book and Design Guide

Multiport SLIC Protector

This multiport line protector is designed as a single-package solution for protecting

1

(T₁)

6

(T₂)

multiple twisted pair from overvoltage conditions. Based on a six-pin SOIC package, it

is equivalent to four discrete DO-214AA packages. Available in surge current ratings

up to 500 A for a 2x10 µs event, the multiport line protector is ideal for densely

populated line cards that cannot afford PCB inefficiencies or the use of series power

resistors.

2

(G₁)

5

(G₂)

3

(R₁)

4

(R₂)

For specific design criteria, see details in Figure 3.34.

Electrical Parameters

V

S

DRM

Volts

Pins

Part

1-2, 2-3,

4-5, 5-6

V

I

C

O

T

F

DRM

S

T

H

Number *

Volts

µAmps

mAmps

800

Amps

mAmps

120

pF

70

P0641U_

P0721U_

P0901U_

P1101U_

58

65

75

95

77

88

98

4

5

1

800

120

130

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

V

is measured at I

DRM.

F

DRM

S

and V are measured at 100 V/µs.

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured across pins 1-2, 2-3, 4-5, or 5-6 at 1 MHz with a 2 V bias and is a typical value. Capacitance

across pins 1-3 or 4-6 is approximately half. “UC” capacitance is approximately 2x the listed value for “UA” product.

Parallel capacitive loads may affect electrical parameters.

•

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

120

45

100

20

50

500

http://www.teccor.com

+1 972-580-7777

2 - 58

SIDACtor^®Data Book and Design Guide

Multiport SLIC Protector

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

60

Unit

°C

Modified MS-013

T

J

6

5

4

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

V_F

I_T

Peak

Value

100

I_S

I_H

Waveform = t_rx t_d

V_DRM

V_S

V_T

I_DRM

-V

+V

-V

50

0

+V

Half Value

I_DRM

V_DRM

V_T

I_H

I_S

V_S

t_r

t_d

I_T

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 59

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SIDACtor^®Data Book and Design Guide

Battrax SLIC Protector

This solid state protection device can be referenced to either a positive or negative voltage

source. The B1xx0C_ is for a -V_REFand the B2050C_ is for a +V_REF. Designed using an

SCR and a gate diode, the B1xx0C_ Battrax begins to conduct at |-V_REF| + |-1.2 V| while the

B2050C_ Battrax begins to conduct at |+V_REF| + |1.2 V|.

For a diagram of a Battrax application, see Figure 3.44.

Pin 3

(+V

Pin 2

(Ground)

)

Pin 1

REF

(Line)

Pin 3

(-V

)

REF

Gate

Pin 1

Pin 2

(Ground)

(Line)

+Battrax

B2050C_

-Battrax

B1xx0C_

Electrical Parameters

Part

V

I

C

O

DRM

S

T

DRM

GT

T

H

Number *

Volts

µAmps

mAmps

100

Amps

2.2

mAmps

100

pF

50

B1100C_

B1160C_

B1200C_

B2050C_

|-V

| + |-1.2 V|

|-V

| + |-10 V|

4

5

REF

100

50

2.2

160

200

50

|+V

| + |1.2 V|

|+V

| + |10 V|

REF

* For individual “CA” and “CC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

ratings assume V

= ±48 V.

REF

V

is measured at I

DRM

DRM.

is measured at 100 V/µs.

S

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “CC” product is approximately 2x the listed value.

Positive Battrax information is preliminary data.

V

maximum value for the negative Battrax is -200 V.

maximum value for the positive Battrax is 110 V.

REF

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

60

150

50

100

20

50

500

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+1 972-580-7777

2 - 60

SIDACtor^®Data Book and Design Guide

Battrax SLIC Protector

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

Unit

°C

Modified DO-214AA

T

-40 to +150

-65 to +150

85

J

Pin 3

T

S

(V_REF

)

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

Pin 1

(Line)

Pin 2

(Ground)

+I

I_T

I_S

I_H

I_S

I_H

V_DRM

V_S

V_T

I_DRM

-V

+V

-V

+V

I_DRM

V_DRM

I_H

V_S

V_DRM

V_T

V_S

I_S

I_T

-I

V-I Characteristics for Negative Battrax

V-I Characteristics for Positive Battrax

14

12

10

8

2.0

1.8

1.6

1.4

6

25 ˚C

1.2

4

1.0

0.8

0.6

0.4

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 61

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SIDACtor^®Data Book and Design Guide

Battrax Dual Negative SLIC Protector

This solid state Battrax protection device is referenced to a negative voltage source. Its

dual-chip package also includes internal diodes for transient protection from positive

surge events.

(G)

5

For a diagram of a Battrax application, see Figure 3.42.

1

2

3

(R)

(T) (-V_REF

)

Electrical Parameters

Part

V

I

C

DRM

S

T

F

DRM

GT

T

H

O

Number *

Volts

µAmps

mAmps

100

Amps

2.2

mAmps

100

pF

50

B1101U_

B1161U_

B1201U_

|-V

| + |-1.2V|

|-V

| + |-10V|

4

5

REF

100

2.2

160

200

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

ratings assume a V

= -48 V.

REF

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

V

maximum value for the B1101, B1161, and/or B1201 is -200 V.

REF

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

120

45

100

20

50

500

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+1 972-580-7777

2 - 62

SIDACtor^®Data Book and Design Guide

Battrax Dual Negative SLIC Protector

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

Modified MS-013

T

J

6

5

4

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

V_F

I_T

Peak

Value

100

I_S

I_H

Waveform = t_rx t_d

V_DRM

V_S

V_T

I_DRM

-V

+V

-V

50

0

+V

Half Value

I_DRM

V_DRM

V_T

I_H

I_S

V_S

t_r

t_d

I_T

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 63

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SIDACtor^®Data Book and Design Guide

Battrax Dual Positive/Negative SLIC Protector

(+V_REF

)

This Battrax device protects Subscriber Line Interface Circuits (SLIC) that use both a

5

positive and negative Ring voltage. It limits transient voltages with rise times of 100 V/

µs to V

±10 V.

REF

Ground

4, 6

Teccor’s six-pin Battrax devices are constructed using four SCRs and four gate

diodes. The SCRs conduct when a voltage that is more negative than -V (and/or

REF

more positive than +V

) is applied to the cathode (Pins 1 and 3) of the SCR. During

REF

conduction, the SCRs appear as a low-resistive path which forces all transients to be

shorted to ground.

2

3

(R)

1

(T)

(-V_REF

)

For a diagram of a Battrax application, see Figure 3.45.

Electrical Parameters

Part

V

I

C

DRM

S

T

DRM

GT

T

H

O

Number *

Volts

µAmps

mAmps

100

Amps

2.2

mAmps

100

pF

50

B3104U_

B3164U_

B3204U_

|-V

| + |±1.2V|

|-V

| + |±10V|

4

5

REF

100

2.2

160

200

* For individual “UA” and “UC” surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

ratings assume a V

= ±48 V.

REF

DRM.

V

is measured at I

DRM

is measured at 100 V/µs.

S

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

Positive Battrax information is preliminary data.

V

maximum value for the negative Battrax is -200 V.

maximum value for the positive Battrax is 110 V.

REF

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

120

45

100

20

50

500

http://www.teccor.com

+1 972-580-7777

2 - 64

SIDACtor^®Data Book and Design Guide

Battrax Dual Positive/Negative SLIC Protector

Thermal Considerations

Package

Modified MS-013

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

T

J

T

S

6

5

4

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

Positive Battrax

Characteristics

I_T_T

I

Peak

Value

100

II_S_S

I

I_H

Waveform = t_rx t_d

H

I

I_DRM

DRM

-V

+V

50

0

Half Value

V

V_D_D_R_R_M_M

V

V_T_T

V

V_S_S

Negative Battrax

Characteristics

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 65

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SIDACtor^®Data Book and Design Guide

Battrax Quad Negative SLIC Protector

This Battrax device is an integrated overvoltage protection solution for SLIC-based

(Subscriber Line Interface Circuit) line cards. This six-pin device is constructed using

four SCRs and four gate diodes.

(T)

6

Ground

5

(R)

4

The device is referenced to V

and conducts when a voltage that is more negative

BAT

than -V

is applied to the cathode (pins 1, 3, 4, or 6) of the SCR. During conduction,

REF

all negative transients are shorted to Ground. All positive transients are passed to

Ground by steering diodes.

1

2

3

(T)

(-V_REF

)

(R)

For specific diagrams showing these Battrax applications, see Figure 3.43.

Electrical Parameters

Part

V

I

C

DRM

S

T

DRM

GT

T

H

O

Number *

Volts

µAmps

mAmps

100

Amps

2.2

mAmps

100

pF

50

B1101U_4 **

B1161U_4 **

B1201U_4 **

|-V

| + |-1.2V|

|-V

| + |-10V|

4

5

REF

100

2.2

160

200

* For individual “UA” and “UC” surge ratings, see table below.

** Contact factory for release date.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

I

is a repetitive surge rating and is guaranteed for the life of the product.

PP

ratings assume a V

= ±48 V.

REF

DRM.

V

is measured at I

DRM

is measured at 100 V/µs.

S

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.

V

maximum value for the negative Battrax is -200 V.

REF

Surge Ratings

I

TSM

PP

2x10 µs

8x20 µs

10x160 µs

10x560 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

A

C

150

500

150

400

90

200

50

120

45

100

20

50

500

http://www.teccor.com

+1 972-580-7777

2 - 66

SIDACtor^®Data Book and Design Guide

Battrax Quad Negative SLIC Protector

Thermal Considerations

Package

Modified MS-013

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +125

-65 to +150

60

Unit

°C

T

J

T

S

6

5

4

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

1

2

3

+I

t_r= rise time to peak value

t_d= decay time to half value

Positive Battrax

Characteristics

I_T_T

I

Peak

Value

100

II_S_S

I

I_H

Waveform = t_rx t_d

H

I

I_DRM

DRM

-V

+V

50

0

Half Value

V

V_D_D_R_R_M_M

V

V_T_T

V

V_S_S

Negative Battrax

Characteristics

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 67

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SIDACtor^®Data Book and Design Guide

CATV and HFC SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220

package. It protects equipment located in the severe surge environment of Community

Antenna TV (CATV) applications.

1

3

Used in Hybrid Fiber Coax (HFC) applications, this device replaces the gas tube

traditionally used for station protection, because a SIDACtor device has a much tighter

voltage tolerance.

Electrical Parameters

C

O

pF

Pins 1-3

200

Part

V

I

H

DRM

S

T

DRM

S

T

Number *

Volts

120

Volts

160

Volts

µAmps

mAmps

800

Amps

2.2

mAmps

50

P1400AD

P1800AD

3

5

170

220

800

2.2

50

150

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

8x20 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

D

1000

250

120

500

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+1 972-580-7777

2 - 68

SIDACtor^®Data Book and Design Guide

CATV and HFC SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

60

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

3

1

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

I_S

I_H

Waveform = t_rx t_d

I_DRM

-V

50

0

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

25 ˚C

4

2

0

-4

-6

-8

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 69

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SIDACtor^®Data Book and Design Guide

High Surge Current SIDACtor Device

This SIDACtor device is a 1000 A solid state protection device offered in a TO-220

1

(T)

package. It protects equipment located in the severe surge environment of Community

2

(G)

Antenna TV (CATV) applications.

3

(R)

This device can replace the gas tubes traditionally used for station protection because

SIDACtor devices have much tighter voltage tolerances.

Electrical Parameters

C

O

pF

Pins 1-3

60

Part

V

I

H

DRM

S

T

DRM

S

T

Number *

Volts

µAmps

mAmps

Amps

mAmps

P6002AD

550

700

5.5

5

800

2.2

50

* For surge ratings, see table below.

Electrical Parameters

C

O

pF

Pins 1-3

115

Part

V

I

H

DRM

S

T

DRM

S

T

Number *

Volts

µAmps

mAmps

Amps

mAmps

P3100AD

280

360

5.5

5

800

2.2

120

* For surge ratings, see table below.

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

8x20 µs

10x1000 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

D

1000

250

120

500

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+1 972-580-7777

2 - 70

SIDACtor^®Data Book and Design Guide

High Surge Current SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

60

Unit

°C

T

J

Modified

TO-220

T

S

R

Thermal Resistance: Junction to Ambient

°C/W

θJA

PIN 1

PIN 3

PIN 2

Note: P6002AD is shown. P3100AD has no center lead.

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

0

I_S

I_H

Waveform = t_rx t_d

I_DRM

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 71

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SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters ME SIDACtor Device

CATV Line Amplifiers/Power Inserters ME

SIDACtor Device

This SIDACtor device is a 5000 A solid state protection device offered in a non-isolated

TO-218 package. It protects equipment located in the severe surge environment of CATV

(Community Antenna TV) applications.

1

2

In CATV line amplifiers and power inserters, this device can replace the gas tubes

traditionally used for station protection because SIDACtor devices have much tighter

voltage tolerances.

Electrical Parameters

Part

V

I

C

DRM

S

T

DRM

S

T

H

O

Number *

Volts

140

Volts

180

220

260

Volts

µAmps

mAmps

800

Amps **

2.2/25

mAmps

50

pF

P1500ME

P1900ME

P2300ME

4

5

750

140

180

800

50

* For surge ratings, see table below.

** I is a free air rating; heat sink I rating is 25 A.

T

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

8x20 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

E

5000

400

630

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2 - 72

SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters ME SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

100

Unit

°C

T

J

S

C

2

TO-218

T

Maximum Case Temperature

°C

R

Thermal Resistance: Junction to Case

Thermal Resistance: Junction to Ambient

1.7

56

°C/W

θJC *

θJA

3

(No

2

1

Connection)

* R

rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.

θJC

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

0

I_S

I_H

Waveform = t_rx t_d

I_DRM

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 73

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SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters NE SIDACtor Device

CATV Line Amplifiers/Power Inserters NE

SIDACtor Device

This SIDACtor device is a 3000 A solid state protection device offered in a non-isolated

TO-263 (D ) package. It protects equipment located in the severe surge environment of

CATV (Community Antenna TV) applications.

1

2

In CATV line amplifiers and power inserters, this device can replace the gas tubes

traditionally used for station protection because SIDACtor devices have much tighter

voltage tolerances.

Electrical Parameters

Part

V

I

T

I

C

DRM

S

T

DRM

S

H

O

Number *

Volts

µAmps

mAmps

Amps **

mAmps

pF

P1900NE

140

220

4

5

800

2.2/25

50

260

* For surge ratings, see table below.

** I is a free air rating; heat sink I rating is 25 A.

T

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

8x20 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

E

3000

400

500

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SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters NE SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Maximum Case Temperature

Thermal Resistance: Junction to Case

Thermal Resistance: Junction to Ambient

Value

-40 to +150

-65 to +150

100

Unit

°C

°C/W

T

J

S

C

TO-263

T

2

D PAK

Pin2

Pin3

Pin2

R

1.7

56

θJC *

R

θJA

Pin1

* R

rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.

θJC

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

0

I_S

I_H

Waveform = t_rx t_d

I_DRM

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 75

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SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters RE SIDACtor Device

CATV Line Amplifiers/Power Inserters RE

SIDACtor Device

This SIDACtor device is a 3000 A solid state protection device offered in a non-isolated

TO-220 package. It protects equipment located in the severe surge environment of CATV

(Community Antenna TV) applications.

1

2

In CATV line amplifiers and power inserters, this device can replace the gas tubes

traditionally used for station protection because SIDACtor devices have much tighter

voltage tolerances.

Electrical Parameters

Part

V

I

T

I

C

DRM

S

T

DRM

S

H

O

Number *

Volts

µAmps

mAmps

Amps **

mAmps

pF

P1900RE

140

220

4

5

800

2.2/25

50

260

* For surge ratings, see table below.

** I is a free air rating; heat sink I rating is 25 A.

T

General Notes:

•

All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.

PP

Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.

I

is a repetitive surge rating and is guaranteed for the life of the product.

V

is measured at I

DRM.

DRM

is measured at 100 V/µs.

S

Special voltage (V and V

) and holding current (I ) requirements are available upon request.

H

S

DRM

Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value.

Surge Ratings

I

TSM

PP

8x20 µs

60 Hz

Amps

di/dt

Series

Amps

Amps/µs

E

3000

400

500

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2 - 76

SIDACtor^®Data Book and Design Guide

CATV Line Amplifiers/Power Inserters RE SIDACtor Device

Thermal Considerations

Package

Symbol

Parameter

Operating Junction Temperature Range

Storage Temperature Range

Value

-40 to +150

-65 to +150

100

Unit

°C

T

J

S

C

Pin2

TO-220

T

Maximum Case Temperature

°C

R

Thermal Resistance: Junction to Case

Thermal Resistance: Junction to Ambient

1.7

56

°C/W

θJC *

θJA

Pin3

Pin1

Pin2

* R

rating assumes the use of a heat sink and on state mode for extended time at 25 A, with average power dissipation of 29.125 W.

θJC

+I

t_r= rise time to peak value

t_d= decay time to half value

I_T

Peak

Value

100

50

0

I_S

I_H

Waveform = t_rx t_d

I_DRM

-V

+V

Half Value

V_DRM

V_T

V_S

t_r

t_d

0

t – Time (µs)

-I

V-I Characteristics

t x t Pulse Wave-form

r d

14

12

10

8

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

6

4

25 ˚C

2

0

-4

-6

-40 -20

0

20 40 60 80 100 120 140 160

Case Temperature (T_C) – ˚C

-8

-40 -20

0

20 40 60 80 100 120 140 160

Junction Temperature (T_J) – ˚C

Normalized V Change versus Junction Temperature

S

Normalized DC Holding Current versus Case Temperature

2 - 77

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SIDACtor^®Data Book and Design Guide

TeleLink Fuse

The TeleLink Surface Mount (SM) surge resistant fuse offers circuit protection without

requiring a series resistor. When used in conjunction with the SIDACtor Transient Voltage

Suppressor (TVS), the TeleLink SM fuse and the SIDACtor TVS provide a complete

regulatory-compliant solution for standards such as GR 1089, TIA-968 (formerly known as

FCC Part 68), UL 60950, and ITU K.20 and K.21. No series resistor is required for the

F1250T and F1251T to comply with these standards.

2

C

V

B

E

Case

emperature

Measurement

0.46

(11.684)

T

0.085 (2.159)

0.17 (4.318)

A

S

0.665

(16.891)

0.35

(8.89)

0.115 (2.921)

0.26

(6.604)

U

W

0.15 (3.81)

K

1

F

0.08 (2.032)

3

J

G

D

2PL

H

Pad Outline

Dimensions are in inches (and millimeters).

Contact factory for enhanced K.20 and K.21 details.

Surge Ratings

I

PP

2x10 µs

10x160 µs

10x560 µs

10x1000 µs

Amps

TeleLink SM Fuse

Amps

F0500T

F1250T

F1251T

100

500

65

160

45

115

35

100

Interrupting Values

2

I t Measured

at DC Rated

Voltage

Interrupting Rating

TeleLink SM

Voltage

Rating

250 V

Current

Rating

500 mA

1.25 A

2 A

Fuse

Voltage, Current

600 V, 40 A

600 V, 60 A *

MIN

1 ms

TYP

MAX

60 ms

2

F0500T

F1250T

F1251T

1.3 A s

2 ms

2

22.2 A s

2

30 A s

* Interrupt test characterized at 50° to 70° phase angle. Phase angles approximating 90° may result in damage to the body of the fuse.

Notes:

•

The TeleLink SM fuse is designed to carry 100% of its rated current for four hours and 250% of its rated current for one second

minimum and 120 seconds maximum. Typical time is four to 10 seconds. For optimal performance, an operating current of 80% or

less is recommended.

2

•

I t is a non-repetitive RMS surge current rating for a period of 16.7 ms.

Resistance Ratings

DC Cold Resistance

Typical Voltage Drop

@ Rated Current

TeleLink SM Fuse

F0500T

MIN

MAX

0.471 V

0.205 V

0.110 V

0.420 Ω

0.107 Ω

0.050 Ω

0.640 Ω

0.150 Ω

0.100 Ω

F1250T

F1251T

Notes:

•

Typical inductance < 40 nH up to 500 MHz.

Resistance changes 0.5% for every °C.

Resistance is measured at 10% rated current.

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2 - 78

SIDACtor^®Data Book and Design Guide

TeleLink Fuse

Qualification Data

The F1250T and F1251T meet the following test conditions per GR 1089 without additional series resistance.

However, in-circuit test verification is required. Note that considerable heating may occur during Test 4 of the

Second Level AC Power Fault Test.

First Level Lightning Surge Test

Surge Voltage

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

Test

Volts

1

2

3

4

5

±600

±1000

±2500

±1000

10x1000

10x360

10x1000

2x10

100

500

25

10

5

10x360

Second Level Lightning Surge Test

Surge Voltage

Wave-form

µs

Surge Current

Amps

Repetitions Each

Polarity

Test

Volts

1

±5000

2x10

500

1

First Level AC Power Fault Test

Applied Voltage, 60 Hz

Short Circuit Current

Test

1

V

Amps

Duration

15 min

RMS

50

0.33

2

100

0.17

15 min

3

4

5

6

7

8

9

200, 400, 600

1 at 600 V

60 applications, 1 s each

60 applications, 5 s each

30 s each

1000

*

600

1000

1

*

0.5

2.2

3

2 s each

1 s each

0.5 s each

5

* Test 5 simulates a high impedance induction fault. For specific information, please contact Teccor Electronics.

Second Level AC Power Fault Test for Non-Customer Premises Equipment

Applied Voltage, 60 Hz

Short Circuit Current

Test

V

Amps

Duration

30 min

5 s

30 min

RMS

1

2

3

4

120, 277

600

30

60

7

100-600

2.2 at 600 V

Notes:

•

Power fault tests equal or exceed the requirements of UL 60950 3rd edition.

Test 4 is intended to produce a maximum heating effect. Temperature readings can exceed 150 °C.

Test 2 may be dependent on the closing angle of the voltage source. Fuse is characterized at 50° to 70°. Closing angles

approximating 90° may result in damage to the body of the fuse.

Use caution when routing internal traces adjacent to the F1250T and F1251T.

•

2 - 79

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SIDACtor^®Data Book and Design Guide

TeleLink Fuse

1000

800

700

600

500

400

300

200

100

90

80

70

60

50

40

30

20

F0500T

F1250T

F1251T

10

9

8

7

6

5

4

3

2

1

.9

.8

.7

.6

.5

.4

.3

.2

.1

.09

.08

.07

.06

.05

.04

.03

.02

.01

.1

.2

.4

.5

.7 .8 .9

1

5

10

20

30

50 60 70 80 90100

Current in Amperes

Time Current Curve

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2 - 80

SIDACtor^®Data Book and Design Guide

TeleLink Fuse

Temperature Derating Curve

Operating temperature is -55 °C to +125 °C with proper correction factor applied.

150

140

130

120

110

100

90

80

70

60

Effect on

Current Rating

50

40

30

-55 -60 -40 -20

0

20 40 60 80 100 125

Ambient ˚C

Chart of Correction Factor

Maximum Temperature Rise

TeleLink Fuse

F0500T

Temperature Reading

≤75 °C (167 °F) *

F1250T

F1251T

* Higher currents and PCB layout designs can affect this parameter.

Notes:

•

Readings are measured at rated current after temperature stabilizes

The F1250T meets the requirements of UL 248-14. However, board layout, board trace widths, and ambient

temperature values can cause higher than expected rises in temperature. During UL testing, the typical

recorded heat rise for the F1250T at 2.2 A was 120 °C.

Package Symbolization

Manufactured in

USA

Manufactured in

Taiwan

Marking

FU

FT

JU

JT

F0500T

F

F1250T

F1251T

U

T

J

NU

NT

N

2 - 81

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SIDACtor^®Data Book and Design Guide

TeleLink Fuse

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2 - 82

SIDACtor^®Data Book and Design Guide