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Battrax Dual Negative SLIC Protector  
Battrax Dual Negative SLIC Protector  
This solid state Battrax protection device is referenced to a negative voltage source. Its  
dual-chip package also includes internal diodes for transient protection from positive  
surge events.  
(G)  
5
For a diagram of a Battrax application, see Figure 3.27.  
1
2
3
(R)  
(T) (-VREF  
)
Electrical Parameters  
Part  
V
V
V
V
I
I
I
I
C
DRM  
S
T
F
DRM  
GT  
T
H
O
Number *  
Volts  
Volts  
Volts  
Volts  
µAmps  
mAmps  
100  
Amps  
mAmps  
100  
pF  
50  
50  
50  
B1101U_  
B1161U_  
B1201U_  
|-V  
|-V  
|-V  
| + |-1.2V|  
| + |-1.2V|  
| + |-1.2V|  
|-V  
|-V  
|-V  
| + |-10V|  
| + |-10V|  
| + |-10V|  
4
4
4
5
5
5
5
5
5
1
1
1
REF  
REF  
REF  
REF  
REF  
REF  
100  
100  
160  
200  
* For individual “UA” and “UC” surge ratings, see table below.  
General Notes:  
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
I
I
is a repetitive surge rating and is guaranteed for the life of the product.  
PP  
PP  
ratings assume a V  
= -48 V.  
REF  
DRM.  
V
V
is measured at I  
DRM  
is measured at 100 V/µs.  
S
Off-state capacitance is measured at 1 MHz with a 2 V bias and is a typical value. “UC” product is approximately 2x the listed value.  
V
maximum value for the B1101, B1161, and/or B1201 is -200 V.  
REF  
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
A
C
150  
500  
150  
400  
90  
200  
50  
120  
45  
100  
20  
50  
500  
500  
http://www.teccor.com  
+1 972-580-7777  
2 - 62  
© 2003 Teccor Electronics  
SIDACtor® Data Book and Design Guide  
Battrax Dual Negative SLIC Protector  
Thermal Considerations  
Package  
Symbol  
Parameter  
Operating Junction Temperature Range  
Storage Temperature Range  
Value  
-40 to +125  
-65 to +150  
60  
Unit  
°C  
°C  
Modified MS-013  
T
J
6
5
4
T
S
R
Thermal Resistance: Junction to Ambient  
°C/W  
θJA  
1
2
3
+I  
tr = rise time to peak value  
td = decay time to half value  
VF  
Peak  
Value  
100  
Waveform = tr x td  
VDRM  
VS  
VT  
-V  
+V  
50  
0
Half Value  
IDRM  
IH  
IS  
tr  
td  
IT  
0
t – Time (µs)  
-I  
V-I Characteristics  
t x t Pulse Wave-form  
r d  
14  
12  
10  
8
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
6
4
25 ˚C  
25 ˚C  
2
0
-4  
-6  
-40 -20  
0
20 40 60 80 100 120 140 160  
Case Temperature (TC) – ˚C  
-8  
-40 -20  
0
20 40 60 80 100 120 140 160  
Junction Temperature (TJ) – ˚C  
Normalized V Change versus Junction Temperature  
S
Normalized DC Holding Current versus Case Temperature  
© 2003 Teccor Electronics  
2 - 63  
http://www.teccor.com  
+1 972-580-7777  
SIDACtor® Data Book and Design Guide