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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
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Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and  
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“Standard”:  
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You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,  
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DATA SHEET  
LASER DIODE  
NDL7400P  
1 310 nm OPTICAL FIBER COMMUNICATIONS  
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE  
DESCRIPTION  
The NDL7400P is a 1 310 nm laser diode DIP module with single mode fiber and internal thermo-electcooer. It  
incorporates lens for optical coupling between laser chip and optical fiber and YAG laser welding technique is  
utilized. Therefore, this lens coupling system can achieve stable optical output power as well s hgh coupling  
efficiency in wide operating temperature range.  
FEATURES  
High output power  
High speed  
Pf = 2.0 mW  
tr = 0.5 ns, tf = 0.7 ns  
lth = 10 mA  
Low threshold current  
Long wavelength  
λC = 1 310 nm  
Internal thermo-electric cooler  
Hermetically sealed 14-pin Dual-In-Line Package  
Single mode fiber pigtail  
High reliability  
PACKAE DIMENSIONS  
in millimeters  
5.1  
BOTTOM VIEW  
1.0  
20.84  
15.0  
8.0  
#8  
#14  
Thermistor  
PD  
LD  
Case  
+
#7  
#1  
Optical Fiber  
SM-9/125,  
PIN CONNECTIONS  
Length: 1 m  
φ
φ
φ
Pin No.  
Function  
Pin No.  
Function  
PD Anode  
1
2
3
4
5
Cooler Anode  
NC  
8
9
10  
Laser Cathode  
Laser Anode,  
Case Ground,  
and Thermistor  
Thermistor  
NC  
NC  
NC  
Laser Anode,  
Case Ground,  
and Thermistor  
NC  
2.54  
φ 0.45  
11  
12  
13  
14  
6
7
NC  
PD Cathode  
Cooler Cathode  
The information in this document is subject to change without notice.  
Document No. P11720EJ2V0DS00 (2nd edition)  
Date Published August 1998 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1996  
©
NDL7400P  
ORDERING INFORMATION  
Part Number  
Available Connector  
NDL7400P  
NDL7400PC  
NDL7400PD  
Without Connector  
With FC-PC Connector  
With SC-PC Connector  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)  
Parameter  
Forward Current of LD  
Symbol  
IF  
Ratings  
Ith + 50  
2.0  
Unit  
mA  
V
Reverse Voltage of LD  
VR  
Forward Current of PD  
IF  
10  
mA  
V
Reverse Voltage of PD  
Operating Case Temperature  
Storage Temperature  
VR  
20  
TC  
20 to +65  
40 to +70  
260  
°C  
°C  
Tstg  
Tsld  
Lead Soldering Temperature (10 s)  
ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 °C, TC = 20 to +65 °C)  
Parameter  
Forward Voltage  
Symbol  
Conditio
MIN.  
TYP.  
MAX.  
Unit  
V
VF  
Ith  
IF = 30 mA  
1.3  
20  
Threshold Current  
10  
mA  
mW  
µW  
Optical Output Power from Fiber  
Pf  
IF = Ith + 3mA  
1.0  
2.0  
Spontaneous Emission Power  
from Fiber  
PS  
IIth  
40  
Differential Efficiency from Fiber  
RMS Center Wavelength  
Spectral Width  
d  
σ
0.033  
1 290  
0.067  
1 310  
1.0  
W/A  
nm  
nm  
ns  
Pf = 1.0 mW, RMS (20 dB)  
Pf = 1.0 mW, RMS (20 dB)  
10 to 90 %  
1 330  
2.5  
Rise Time  
tr  
0.5  
1.0  
Fall Time  
tf  
90 to 10 %  
0.7  
1.0  
ns  
2
NDL7400P  
ELECTRO-OPTICAL CHARACTERISTICS  
(Applicable to Monitor PD: TLD = 25 °C, TC = 20 to +65 °C)  
Parameter  
Monitor Current  
Symbol  
Conditions  
VR = 5 V, Pf = 1.0 mW  
VR = 5 V  
MIN.  
50  
TYP.  
MAX.  
Unit  
µA  
µA  
ns  
Im  
ID  
tr  
350  
1.0  
5.0  
8.0  
0.5  
Dark Current  
Rise Time  
VR = 5 V, RL = 100 Ω  
VR = 5 V, RL = 100 Ω  
Im = const.  
3.0  
5.0  
Fall Time  
tf  
ns  
γ*1  
Tracking Error  
dB  
Pf  
P
f
*1 γ = 10 log  
T
LD = T = 25 ˚C  
C
1.0 mW  
(mW)  
1.0  
T
LD = 25 ˚C, T  
C
= –20 to +65 ˚C  
P
f
0
I
m
oduct  
I
m
(@ P (25 ˚C) = 1.0 mW)  
f
ELECTRO-OPTICAL CHARACTERISTICS  
(Applicable to Thermistor and TE Cooler: TLD = 25 °C, TC = 20 to +65 °C)  
Parameter  
Thermistor Resistance  
B Constant  
Symbol  
Conditions  
MIN.  
9.5  
TYP.  
10  
MAX.  
10.5  
3 500  
1.0  
Unit  
kΩ  
K
R
B
TLD = 25 °C  
3 300  
3 400  
0.6  
ued Pr  
Cooler Current  
IC  
T = 40 K  
T = 40 K  
A
Cooler Voltage  
VC  
T*1  
1.1  
1.5  
V
Cooler Capacity  
IC = 1.0 A, Pf = 1.0 mW  
40  
K
*1 T = TC – TLD  
Discontin  
3
NDL7400P  
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)  
OUTPUT POWER FROM FIBER vs.  
LD MONITOR CURRENT  
OUTPUT POWER FROM FIBER vs.  
FORWARD CURRENT  
5.0  
4.0  
3.0  
2.0  
1.0  
3.0  
2.0  
1.0  
T
LD = 25 ˚C  
= –20 to +65 ˚C  
T
C
0
50  
100  
(mA)  
150  
0
0.2  
4  
(mA)  
0.6  
Forward Current I  
F
LD Mourrent I  
m
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
REUENCY RESPONSE  
50  
40  
30  
9
6
0
–3  
–6  
20  
10  
–9  
–12  
1.5  
Modulation Frequency f (GHz)  
2.0  
0
1
0
0.5  
1.0  
Forward Voltage (
F
TYPICAL THERMISTOR RESISTANCE  
vs. CASE TEMPERATURE  
LONGITUDINAL FROM FIBER  
50  
30  
20  
10  
5
3
2
1
1 300  
1 310  
1 320  
0
25  
50  
75  
Wavelength λ (nm)  
Case Temperature T (˚C)  
C
4
NDL7400P  
1.3 µm FABRY-PEROT DC-PBH LASER DIODE FAMILY  
Part Number  
NDL7001  
Package  
φ5.6 mm Small Can  
Remarks  
With monitor photo diode  
With monitor photo diode  
NDL7001L  
φ5.6 mm Small Can with Lens  
NDL7401P Series  
NDL7408P Series  
4-pin Coaxial Module with SMF  
Without TEC  
With monitor photo diode  
NDL7400P  
14-pin DIP Module with SMF  
With TEC, thermistor, monitor  
photo diode  
5
NDL7400P  
REFERENCE  
Document Name  
Document No.  
NEC semiconductor device reliability/quality control system  
Quality grades on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Semiconductor selection guide  
C11159E  
C11531E  
C10535E  
X10679E  
6
NDL7400P  
[MEMO]  
7
NDL7400P  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEC Corporation  
NEC Building, 7-1, Shiba 5-chome,  
SEMICONDUCTOR LASER  
Minato-ku, Tokyo 108-01, Japan  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
Type number:  
Manufactured:  
Serial Number:  
This product conforms to FDA  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
regulations as applicable  
to standards 21 CFR Chapter 1.  
Subchapter J.  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from  
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales  
representative.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
oduct  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this  
document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from use of a device described herein or any other liability arising  
from use of such device. No license, either express, implied or otherwise, is granted under any patents,  
copyrights or other intellectual property rights of NEC Corporation or others.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on  
ued Pr  
a customer designated "quality assurance program" for a specific application. The recommended applications  
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each  
device before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
Anti-radioactive design is not implemented in this product.  
M4 96. 5  
Discontin