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MOSFET  
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  
OptiMOSTM  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
DataꢀSheet  
Rev.ꢀ2.0  
Final  
PowerꢀManagementꢀ&ꢀMultimarket  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
TSDSON-8ꢀFL  
(enlarged source interconnection)  
1ꢀꢀꢀꢀꢀDescription  
Features  
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀbuckꢀconverters  
•ꢀMonolithicꢀintegratedꢀSchottky-likeꢀdiode  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀN-channel  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
S 1  
S 2  
S 3  
G 4  
8 D  
7 D  
Parameter  
Value  
Unit  
VDS  
25  
V
6 D  
5 D  
RDS(on),max  
ID  
1.3  
40  
mΩ  
A
QOSS  
29  
nC  
nC  
QG(0V..4.5V)  
17  
Typeꢀ/ꢀOrderingꢀCode  
Package  
PG-TSDSON-8 FL  
Marking  
RelatedꢀLinks  
BSZ013NE2LS5I  
13NE25I  
-
1) J-STD20 and JESD22  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
2ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
-
-
-
-
-
-
-
-
-
-
40  
40  
40  
40  
32  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=60ꢀK/W1)  
Pulsed drain current2)  
ID,pulse  
IAS  
-
-
-
-
-
160  
20  
A
TC=25ꢀ°C  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
-
A
TC=25ꢀ°C  
EAS  
VGS  
-
90  
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
-16  
16  
-
-
-
-
-
69  
2.1  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=60ꢀK/W1)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
1.8  
K/W  
K/W  
-
-
Device on PCB,  
-
-
60  
6 cm2 cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
V(BR)DSS  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
Drain-source breakdown voltage  
25  
-
V
VGS=0ꢀV,ꢀID=10ꢀmA  
Breakdown voltage temperature  
coefficient  
dV(BR)DSSꢀ/dTj -  
VGS(th) 1.2  
IDSS  
15  
-
-
mV/K ID=10ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C  
Gate threshold voltage  
2.0  
V
VDS=VGS,ꢀID=250ꢀµA  
-
-
-
0.5  
-
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
mA  
nA  
mΩ  
0.9  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.3  
1.1  
1.7  
1.3  
VGS=4.5ꢀV,ꢀID=20ꢀA  
VGS=10ꢀV,ꢀID=20ꢀA  
RDS(on)  
Gate resistance  
RG  
gfs  
-
0.7  
1.2  
-
Ω
-
Transconductance  
75  
150  
S
|VDS|>2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
2500 3400 pF  
1200 1600 pF  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
Reverse transfer capacitance  
92  
5
-
-
pF  
ns  
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
4
-
-
-
ns  
ns  
ns  
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
26  
3
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
1) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Typ.  
5.8  
4.0  
3.6  
5.5  
17  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Max.  
Min.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
-
-
Qsw  
-
Gate charge total  
Qg  
23  
-
Gate plateau voltage  
Gate charge total2)  
Vplateau  
Qg  
2.3  
37  
50  
-
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge2)  
Qg(sync)  
Qoss  
16  
29  
39  
VDD=12ꢀV,ꢀVGS=0ꢀV  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
40  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
Qrr  
-
160  
0.65  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.5  
20  
V
VGS=0ꢀV,ꢀIF=11ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=11ꢀA,ꢀdiF/dt=400ꢀA/µs  
Reverse recovery charge  
nC  
1) See ″Gate charge waveforms″ for parameter definition  
2) Defined by design. Not subject to production test  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
80  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
0
40  
80  
120  
160  
0
40  
80  
120  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
1 µs  
10 µs  
102  
100  
0.5  
100 µs  
1 ms  
0.2  
0.1  
10 ms  
0.05  
101  
10-1  
0.02  
0.01  
DC  
single pulse  
100  
10-2  
10-1  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
400  
2.0  
3.5 V  
3.2 V  
5 V  
4.5 V  
4 V  
3.5 V  
3.2 V  
10 V  
300  
1.5  
4 V  
4.5 V  
5 V  
7 V  
3 V  
8 V  
10 V  
200  
100  
0
1.0  
2.8 V  
0.5  
0.0  
0
1
2
3
0
10  
20  
30  
40  
50  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
300  
400  
250  
200  
150  
100  
320  
240  
160  
80  
150 °C  
25 °C  
50  
0
0
0
1
2
3
4
5
0
40  
80  
120  
160  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
3.0  
2.5  
2.5  
2.0  
1.5  
2.0  
10 mA  
1.5  
1.0  
0.5  
0.0  
typ  
1.0  
0.5  
0.0  
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=20ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=10ꢀmA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
-55 °C  
25 °C  
125 °C  
150 °C  
Ciss  
102  
101  
100  
10-1  
Coss  
103  
102  
101  
Crss  
0
5
10  
15  
20  
25  
0.0  
0.4  
0.8  
1.2  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
10  
8
12 V  
20 V  
5 V  
25 °C  
100 °C  
101  
6
125 °C  
4
2
100  
0
100  
101  
102  
103  
0
10  
20  
30  
40  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀTyp.ꢀdrain-sourceꢀleakageꢀcurrent  
Gate charge waveforms  
10-3  
125 °C  
100 °C  
10-4  
75 °C  
10-5  
25 °C  
10-6  
0
5
10  
15  
20  
Vsdꢀ[V]  
IDSS=f(VDS);ꢀVGS=0ꢀV;ꢀparameter:ꢀTj  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
6ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2015-08-17  
OptiMOSTM5ꢀPower-MOSFET,ꢀ25ꢀV  
BSZ013NE2LS5I  
RevisionꢀHistory  
BSZ013NE2LS5I  
Revision:ꢀ2015-08-17,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
2.0  
Subjects (major changes since last revision)  
Release of final version  
2015-08-17  
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TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
12  
Rev.ꢀ2.0,ꢀꢀ2015-08-17